Package of light emitting diode and method for manufacturing the same
Provided is a package of a light emitting diode. The package according to an embodiment includes a package of a light emitting diode, the package comprising: a base layer including an entire top surface that is substantially flat; a light emitting diode chip on the base layer; a lead frame electrically connected to the light emitting diode chip; and a reflective coating layer comprising titanium oxide, wherein a top surface of the reflective coating layer is substantially parallel to a top surface of the base layer, and wherein ends of the reflective coating layer and base layer are aligned with each other.
1. A package of a light emitting diode, the package comprising:
a base layer;
a semiconductor light emitting diode chip on the base layer;
a lead frame electrically connected to the semiconductor light emitting diode chip; and
a titanium oxide layer on the base layer,
wherein a bottom surface of the titanium oxide layer is positioned higher than a top surface of the semiconductor light emitting diode chip,
wherein a bottommost surface of the titanium oxide layer is entirely positioned higher than the top surface of the semiconductor light emitting diode chip, and
wherein at least one end of the lead frame is substantially aligned with at least one end of the titanium oxide layer.
2. The package according to claim 1 , wherein titanium oxide is substantially uniformly mixed in the titanium oxide layer.
3. The package according to claim 1 , wherein ends of the lead frame and titanium oxide layer are substantially aligned with each other.
4. The package according to claim 1 , wherein a lateral width of the titanium oxide layer is larger than a thickness from the bottommost surface to a topmost surface of the titanium oxide layer.
5. The package according to claim 1 , wherein a shortest lateral width of the titanium oxide layer is larger than the thickness from the bottommost surface to a topmost surface of the titanium oxide layer.
6. The package according to claim 1 , wherein a thickness from the bottommost surface to a topmost surface of the titanium oxide layer is thinner than a thickness from a bottom surface to a topmost surface of the semiconductor light emitting diode chip.
7. The package according to claim 1 , wherein the base layer includes an entire top surface that is substantially flat, wherein the base layer comprises a metal.
8. The package according to claim 1 , further comprising a molding material covering the semiconductor light emitting diode chip in a predetermined shape.
9. The package according to claim 1 , further comprising an insulating layer on the base layer, wherein the insulating layer comprises a flame retardant-4 resin.
10. The package according to claim 1 , wherein the titanium oxide layer comprises a white resin.
11. The package according to claim 1 , wherein the titanium oxide layer functions as a reflective layer.
12. The package according to claim 1 , wherein the titanium oxide layer comprises an overlapping region which is vertically overlapped with at least one portion of the lead frame to a first direction, wherein the first direction is vertical to a top surface of the base layer.
13. The package according to claim 12 , wherein a width of the overlapping region is greater than a width of the semiconductor light emitting diode chip, and
wherein a lateral width of the overlapping region is at least two times greater than a lateral width of the semiconductor light emitting diode chip.
14. The package according to claim 1 , wherein the bottom surface of the titanium oxide layer is substantially parallel to a top surface of the base layer.
15. A package of a light emitting diode, the package comprising:
a base layer;
a semiconductor light emitting diode chip on the base layer;
a lead frame electrically connected to the semiconductor light emitting diode chip; and
a titanium oxide layer on the base layer,
wherein a top surface of the semiconductor light emitting diode chip is positioned lower than a bottom surface of the titanium oxide layer,
wherein the titanium oxide layer comprises titanium oxide and the titanium oxide is substantially uniformly mixed in the titanium oxide layer,
wherein the titanium oxide layer comprises an overlapping region which is vertically overlapped with at least one portion of the lead frame to a first direction, wherein the first direction is vertical to a top surface of the base layer,
wherein a lateral width of the overlapping region is at least two times greater than a lateral width of the semiconductor light emitting diode chip, and
wherein at least one end of the lead frame is substantially aligned with at least one end of the titanium oxide layer.
16. The package according to claim 15 , wherein ends of the lead frame and titanium oxide layer are substantially aligned with each other.
17. The package according to claim 15 , wherein a lateral width of the titanium oxide layer is larger than a thickness from a bottommost surface to a topmost surface of the titanium oxide layer.
18. The package according to claim 15 , wherein a shortest lateral width of the titanium oxide layer is larger than a thickness from a bottommost surface to a topmost surface of the titanium oxide layer and wherein a thickness of the titanium oxide layer is substantially uniform.
19. The package according to claim 15 , wherein a bottommost surface of the titanium oxide layer is entirely positioned higher than the top surface of the semiconductor light emitting diode chip.
20. The package according to claim 15 , wherein the at least one end of the lead frame is substantially aligned with at least one end of the base layer.