Shared global read and write word lines

1. An apparatus comprising:

an array of bit cells comprising a first row of bit cells and a second row of bit cells;

a first global read word line configured to be selectively coupled to the first row of bit cells and to the second row of bit cells; and

a second global read word line configured to be selectively coupled to the first row of bit cells and to the second row of bit cells;

wherein the first global read word line and the second global read word line are located in a common metal layer.

2. The apparatus of claim 1 , further comprising a global write word line configured to be selectively coupled to the first row of bit cells and to the second row of bit cells, wherein the global write word line is located in the common metal layer.

3. The apparatus of claim 2 , further comprising row select logic that is configured to:

receive a selection signal;

couple the first global read word line, the second global read word line, and the global write word line to the first row of bit cells if the selection signal has a first logical value; and

couple the first global read word line, the second global read word line, and the global write word line to the second row of bit cells if the selection signal has a second logical value.

4. The apparatus of claim 1 , wherein the common metal layer is a fourth metal layer.

5. The apparatus of claim 1 , wherein the array of bit cells is manufactured using a semiconductor manufacturing process of less than 14 nanometers (nm).

6. The apparatus of claim 5 , wherein the semiconductor manufacturing process is a 10 nm process.

7. The apparatus of claim 6 , wherein a pitch of the first global read word line is approximately 80 nm, wherein a pitch of the second global read word line is approximately 80 nm, and wherein a pitch of a global write word line is approximately 80 nm.

8. The apparatus of claim 5 , wherein the semiconductor manufacturing process is a 7 nm process.

9. The apparatus of claim 2 , further comprising:

a first local read word line coupled to the first row of bit cells, the first local read word line formed in a second metal layer;

a second local read word line coupled to the first row of bit cells, the second local read word line formed in the second metal layer; and

a first local write word line coupled to the first row of bit cells, the first local write word line formed in a third metal layer.

10. The apparatus of claim 9 , further comprising:

a third local read word line coupled to the second row of bit cells, the third local read word line formed in the second metal layer;

a fourth local read word line coupled to the second row of bit cells, the fourth local read word line formed in the second metal layer; and

a second local write word line coupled to the second row of bit cells, the second local write word line formed in the third metal layer.

11. The apparatus of claim 1 , wherein the first row of bit cells includes a three-port static random access memory (SRAM) bit cell.

12. A method comprising:

receiving, at row select logic, a selection signal;

coupling a first global read word line and a second global read word line to a first row of bit cells if the selection signal has a first logical value; and

coupling the first global read word line and the second global read word line to a second row of bit cells if the selection signal has a second logical value;

wherein the first global read word line and the second global read word line are located in a common metal layer.

13. The method of claim 12 , further comprising:

coupling a global write word line to the first row of bit cells if the selection signal has the first logical value; and

coupling the global write word line to the second row of bit cells if the selection signal has the second logical value;

wherein the global write word line is located in the common metal layer.

14. The method of claim 12 , wherein the common metal layer is a fourth metal layer.

15. The method of claim 12 , wherein the first row of bit cells and the second row of bit cells are manufactured using a semiconductor manufacturing process of less than 14 nanometers (nm).

16. The method of claim 15 , wherein the semiconductor manufacturing process is a 7 nm process or a 10 nm process.

17. A non-transitory computer-readable medium comprising instructions that, when executed by a processor, cause the processor to:

initiate coupling a first global read word line and a second global read word line to a first row of bit cells if a received selection signal has a first logical value; and

initiate coupling the first global read word line and the second global read word line to a second row of bit cells if the received selection signal has a second logical value;

wherein the first global read word line and the second global read word line are located in a common metal layer.

18. The non-transitory computer-readable medium of claim 17 , further comprising instructions that, when executed by the processor, cause the processor to:

initiate coupling a global write word line to the first row of bit cells if the received selection signal has the first logical value; and

initiate coupling the global write word line to the second row of bit cells if the received selection signal has the second logical value;

wherein the global write word line is located in the common metal layer.

19. The non-transitory computer-readable medium of claim 17 , wherein the common metal layer is a fourth metal layer.

20. The non-transitory computer-readable medium of claim 17 , wherein the first row of bit cells and the second row of bit cells are manufactured using a manufacturing process of less than 14 nanometers (nm).

21. The non-transitory computer-readable medium of claim 17 , wherein the first row of bit cells includes a three-port static random access memory (SRAM) bit cell.

22. The non-transitory computer-readable medium of claim 21 , wherein the three-port SRAM bit cell includes a first read port, a second read port, and a write port, wherein a first local read word line couples the first global read word line to the first read port, wherein a second local read word line couples the second global read word line to the second read port, and wherein a local write word line couples a global write word line to the write port, and wherein the first local read word line and the second local read word line are located in a second metal layer, and wherein the local write word line is located in a third metal layer.

23. An apparatus comprising:

first means for performing a read operation configured to be selectively coupled to a first row of bit cells and to a second row of bit cells; and

second means for performing the read operation configured to be selectively coupled to the first row of bit cells and to the second row of bit cells;

wherein the first means for performing the read operation and the second means for performing the read operation are located in a common metal layer.

24. The apparatus of claim 23 , further comprising means for performing a write operation configured to be selectively coupled to the first row of bit cells and to the second row of bit cells, wherein the means for performing the write operation is located in the common metal layer.

25. The apparatus of claim 23 , wherein the common metal layer is a fourth metal layer.

26. The apparatus of claim 24 , wherein the first row of bit cells includes a three-port static random access memory (SRAM) bit cell.

27. The apparatus of claim 26 , wherein the three-port SRAM bit cell includes a first read port, a second read port, and a write port.

28. The apparatus of claim 27 , wherein a first local read word line couples the first means for performing the read operation to the first read port, wherein a second local read word line couples the second means for performing the read operation to the second read port, and wherein a local write word line couples the means for performing the write operation to the write port.

29. The apparatus of claim 1 , wherein the array of bit cells, the first global read word line, and the second global read word line are integrated in a static random access memory (SRAM) device, and wherein the SRAM device is integrated in a mobile communication device.

30. The apparatus of claim 1 , wherein the array of bit cells, the first global read word line, and the second global read word line are integrated in a static random access memory (SRAM) device, and wherein the SRAM device is integrated in a fixed location communication unit.