IP Library › Granted Patent US 9,460,772

Granted Patent B2

US 9,460,772 · App. 14/341,922 · Granted Oct 4, 2016

Semiconductor device

Inventor: Toshihiko Saito (Kanagawa, JP)

Assignee: Semiconductor Energy Laboratory Co., Ltd.

G11C11/401 G11C5/02 G11C5/063 G11C8/14

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Quick Facts

Patent No.: US 9,460,772
App. No.: 14/341,922
Granted: Oct 4, 2016
Kind: B2

External Links

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Abstract

Provided is a memory device in which memory capacity per unit area is increased without making the manufacturing process complicated. The memory device includes a plurality of memory cells, a plurality of word lines, and a plurality of bit lines. Each of the plurality of memory cells includes a switching element and a capacitor including a first electrode and a second electrode. In at least one of the plurality of memory cells, in accordance with a potential applied to one of the plurality of word lines, the switching element controls a connection between one of the plurality of bit lines and the first electrode, and the second electrode is connected to another one of the plurality of word lines.

Claims (69)

1. A semiconductor device comprising:

a first memory cell comprising a first transistor and a first capacitor;

a second memory cell comprising a second transistor and a second capacitor;

a first word line;

a second word line; and

a bit line,

wherein a gate of the first transistor is electrically connected to the first word line,

wherein a gate of the second transistor is electrically connected to the second word line,

wherein one of a source and a drain of the first transistor is electrically connected to the bit line,

wherein one of a source and a drain of the second transistor is electrically connected to the bit line,

wherein the other of the source and the drain of the first transistor is electrically connected to a first electrode of the first capacitor,

wherein the other of the source and the drain of the second transistor is electrically connected to an electrode of the second capacitor,

wherein a second electrode of the first capacitor is electrically connected to the second word line, and

wherein the first transistor comprises a semiconductor film comprising an oxide semiconductor.

2. The semiconductor device according to claim 1 , wherein the oxide semiconductor comprises In, Ga and Zn.

3. The semiconductor device according to claim 1 , wherein a hydrogen concentration of the semiconductor film is lower than 1×10 19 /cm 3 .

4. A semiconductor device comprising:

a first memory cell comprising a first transistor and a first capacitor;

a second memory cell comprising a second transistor and a second capacitor;

a first word line;

a second word line; and

a bit line,

wherein a first conductive film comprises the first word line and a gate of the first transistor,

wherein a second conductive film comprises the second word line and a gate of the second transistor,

wherein a third conductive film is in contact with a semiconductor film of the first transistor,

wherein the second conductive film and the third conductive film overlap each other,

wherein a gate of the first transistor is electrically connected to the first word line,

wherein a gate of the second transistor is electrically connected to the second word line,

wherein one of a source and a drain of the first transistor is electrically connected to the bit line,

wherein one of a source and a drain of the second transistor is electrically connected to the bit line,

wherein the other of the source and the drain of the first transistor is electrically connected to a first electrode of the first capacitor,

wherein the other of the source and the drain of the second transistor is electrically connected to an electrode of the second capacitor, and

wherein a second electrode of the first capacitor is electrically connected to the second word line.

5. The semiconductor device according to claim 4 , wherein the semiconductor film of the first transistor comprises an oxide semiconductor.

6. The semiconductor device according to claim 5 , wherein the oxide semiconductor comprises In, Ga and Zn.

7. The semiconductor device according to claim 5 , wherein a hydrogen concentration of the semiconductor film is lower than 1×10 19 /cm 3 .

8. The semiconductor device according to claim 4 ,

wherein the semiconductor film of the first transistor is over a substrate, and

wherein the first conductive film over the semiconductor film of the first transistor.

9. The semiconductor device according to claim 8 , wherein the third conductive film is over the semiconductor film of the first transistor.

10. The semiconductor device according to claim 8 , wherein the semiconductor film of the first transistor is over the third conductive film.

11. A semiconductor device comprising:

a first memory cell comprising a first transistor and a first capacitor;

a second memory cell comprising a second transistor and a second capacitor;

a first word line;

a second word line; and

a bit line,

wherein a first conductive film comprises the first word line and a gate of the first transistor,

wherein a second conductive film comprises the second word line and a gate of the second transistor,

wherein a third conductive film is in contact with a semiconductor film of the first transistor,

wherein a fourth conductive film comprises the bit line,

wherein the fourth conductive film is in contact with the semiconductor film of the first transistor,

wherein the fourth conductive film is in contact with a semiconductor film of the second transistor,