Glass substrate with sealing material layer, organic EL device using same, and manufacturing method for electronic device
Provided is a glass substrate with a sealing material layer, including a sealing material layer formed by sintering a sealing material, in which: the sealing material includes at least inorganic powder; the inorganic powder includes glass powder and a refractory filler; the content of refractory filler in the inorganic powder is 10 to 35 vol %; and the sealing material layer has a surface roughness Ra of less than 0.5 μm.
1. A method of producing an electronic device by laser sealing, the method comprising the steps of:
preparing a first glass substrate and a second glass substrate;
mixing a first sealing material comprising a first refractory filler and a first glass powder with a first vehicle comprising a first organic binder to manufacture a first sealing material paste;
mixing a second sealing material comprising a second refractory filler and a second glass powder with a second vehicle comprising a second organic binder to manufacture a second sealing material paste;
applying the first sealing material paste onto the first glass substrate, followed by forming a first sealing material film;
applying the second sealing material paste onto the first sealing material film, followed by forming a second sealing material film;
firing the first sealing material film and the second sealing material film to form a sealing material layer onto the first glass substrate;
laminating the first glass substrate and the second glass substrate via the sealing material layer to yield a laminate; and
irradiating the laminate with laser light so that a laser sealing temperature is equal to or lower than a firing temperature to hermetically seal the first glass substrate and the second glass substrate,
wherein the content of the second refractory filler in the second sealing material is smaller than the content of the first refractory filler in the first sealing material, and
wherein the average particle diameter D 50 of the second glass powder is smaller than the average particle diameter D 50 of the first glass powder.
2. The method of producing an electronic device according to claim 1 , wherein the laser sealing temperature is 500° C. or less.
3. The method of producing an electronic device according to claim 1 , wherein either the first sealing material comprises 97.5 to 100 mass % of inorganic powder comprising the first glass powder and 0 to 2.5 mass % of a pigment or the second sealing material comprises 97.5 to 100 mass % of inorganic powder comprising the second glass powder and 0 to 2.5 mass % of a pigment, or both the first sealing material comprises 97.5 to 100 mass % of inorganic powder comprising the first glass powder and 0 to 2.5 mass % of a pigment and the second sealing material comprises 97.5 to 100 mass % of inorganic powder comprising the second glass powder and 0 to 2.5 mass % of a pigment.
4. The method of producing an electronic device according to claim 3 , wherein the first glass powder comprises, as a glass composition expressed in mol % in terms of the following oxides, 35 to 70% of SnO and 10 to 30% of P 2 O 5 , and wherein the second glass powder comprises, as a glass composition expressed in mol % in terms of the following oxides, 35 to 70% of SnO and 10 to 30% of P 2 O 5 .
5. The method of producing an electronic device according to claim 3 , wherein the first glass powder comprises, as a glass composition expressed in mol % in terms of the following oxides, 20 to 60% of Bi 2 O 3 , 10 to 35% of B 2 O 3 , 5 to 40% of ZnO, and 5 to 30% of CuO+Fe 2 O 3 , and wherein the second glass powder comprises, as a glass composition expressed in mol % in terms of the following oxides, 20 to 60% of Bi 2 O 3 , 10 to 35% of B 7 O 3 , 5 to 40% of ZnO, and 5 to 30% of CuO+Fe 2 O 3 .
6. The method of producing an electronic device according to claim 1 , wherein either the first sealing material comprises 0.1 to 60 vol % of the first refractory filler or the second sealing material comprises 0.1 to 60 vol % of the second refractory filler, or both the first sealing material comprises 0.1 to 60 vol % of the first refractory filler and the second sealing material comprises 0.1 to 60 vol % of the second refractory filler.
7. The method of producing an electronic device according to claim 1 , wherein the electronic device comprises an OLED device.
8. The method of producing an electronic device according to claim 1 , wherein the firing of the coating layer is carried out under an inert atmosphere.
9. The method of producing an electronic device according to claim 1 ,
wherein the softening point of the second glass powder is lower than the softening point of the first glass powder.