Mom capacitor circuit and semiconductor device thereof
A capacitor circuit formed by a plurality of capacitors using metal electrodes formed on a substrate is provided, such that the capacitance of the capacitor can be adjusted with higher precision as compared to the conventional art. The MOM capacitor includes a plurality of MOM (Metal-Oxide-Metal) capacitors respectfully formed by pairs of metal electrodes facing each other through an insulating film on a substrate. The MOM capacitor circuit is formed by at least one capacitor element in a manner that each of the pairs of the metal electrodes of the MOM capacitors is connected to a first terminal and a second terminal through a connecting conductor; and at least one switch element, connected to the plurality of metal electrodes and at least one of the first terminal and the second terminal, wherein a capacitance of the MOM capacitor circuit is adjusted by turning on/off the switch element.
1. A MOM capacitor circuit comprising:
a plurality of MOM (Metal-Oxide-Metal) capacitors respectively formed by a plurality of pairs of metal electrodes facing each other through an insulating film on a substrate, wherein the MOM capacitor circuit is formed by at least one capacitor element in a manner that each of the pairs of the metal electrodes of the plurality of the MOM capacitors is connected to a first terminal and a second terminal through a connecting conductor;
one or more switch element, connected to the plurality of metal electrodes and at least one of the first terminal and the second terminal; and
an adjustment capacitance portion with a variable capacitance, wherein the adjustment capacitance portion has a plurality of first metal electrodes, and at least one part of the plurality of first metal electrode is connected to either the first terminal or the second terminal through each of the switch elements,
wherein a capacitance of the MOM capacitor circuit is adjusted by turning on or off the switch element.
2. The MOM capacitor circuit according to claim 1 , wherein the plurality of metal electrodes is arranged in a grid shape in a cross section of multiple layers on the substrate.
3. The MOM capacitor circuit according to claim 1 , further comprising: a fixed capacitance portion with a fixed capacitance, wherein the fixed capacitance portion has a plurality of second metal electrodes, and the plurality of the second metal electrodes is respectively connected to either the first terminal or the second terminal.
4. The MOM capacitor circuit according to claim 1 , wherein at least one part of the plurality of the first metal electrodes of the adjustment capacitance portion is connected to the first terminal through each of the switch elements.
5. The MOM capacitor circuit according to claim 4 , wherein when each of the switch elements is turned off, a metal electrode connected to each of the switch elements is in a floating state.
6. The MOM capacitor circuit according to claim 1 , wherein at least one part of the plurality of the first metal electrodes of the adjustment capacitance portion is connected to the first terminal through a first switch element and connected to the second terminal through a second switch element.
7. The MOM capacitor circuit according to claim 6 , wherein when both of the first switch element and the second switch element are turned off, metal electrodes connected to the first switch element and the second switch element are in a floating state.
8. The MOM capacitor circuit according to claim 1 , wherein at least one part of the plurality of the first metal electrodes of the adjustment capacitance portion is connected to the first terminal through a first switch element; and
at least another part other than the at least one part of the plurality of the first metal electrodes of the adjustment capacitance portion is connected to the second terminal through a second switch element.
9. The MOM capacitor circuit according to claim 8 , wherein when the first switch element or the second switch element is turned off, a metal electrode connected to the first switch element or the second switch element is in a floating state.
10. The MOM capacitor circuit according to claim 1 , wherein the adjustment capacitance portion comprises:
a rough adjustment capacitance portion, wherein a plurality of metal electrodes that belongs to the at least one part of the plurality of first metal electrode of the adjustment capacitance portion is connected to one another, and connected to the first terminal through a first switch element and connected to the second terminal through a second switch element; and
a fine adjustment capacitance portion, wherein metal electrodes other than the at least one part of the plurality of the first metal electrodes of the adjustment capacitance portion are respectively connected to the first terminal through a third switch element and connected to the second terminal through a fourth switch element.
11. The MOM capacitor circuit according to claim 10 , wherein when both of the first switch element and the second switch element are turned off, metal electrodes connected to the first switch element and the second switch element are in a floating state.
12. A semiconductor device, comprising:
a MOM capacitor circuit, comprising:
a plurality of MOM (Metal-Oxide-Metal) capacitors respectively formed by a plurality of pairs of metal electrodes facing each other through an insulating film on a substrate, wherein the MOM capacitor circuit is formed by at least one capacitor element in a manner that each of the pairs of the metal electrodes of the plurality of the MOM capacitors is connected to a first terminal and a second terminal through a connecting conductor;
one or more switch element, connected to the plurality of metal electrodes and at least one of the first terminal and the second terminal; and
an adjustment capacitance portion with a variable capacitance, wherein the adjustment capacitance portion has a plurality of first metal electrodes, and at least one part of the plurality of first metal electrode is connected to either the first terminal or the second terminal through each of the switch elements,
wherein a capacitance of the MOM capacitor circuit is adjusted by turning on or off the switch element, and
wherein the plurality of metal electrodes is arranged in a grid shape in a cross section of multiple layers on the substrate.
13. The semiconductor device according to claim 12 , further comprising: a fixed capacitance portion with a fixed capacitance, wherein the fixed capacitance portion has a plurality of second metal electrodes, and the plurality of the second metal electrodes is respectively connected to either the first terminal or the second terminal.
14. The semiconductor device according to claim 12 , wherein at least one part of the plurality of the first metal electrodes of the adjustment capacitance portion is connected to the first terminal through each of the switch elements.
15. The semiconductor device according to claim 12 , wherein at least one part of the plurality of the first metal electrodes of the adjustment capacitance portion is connected to the first terminal through a first switch element and connected to the second terminal through a second switch element.
16. The semiconductor device according to claim 12 , wherein at least one part of the plurality of the first metal electrodes of the adjustment capacitance portion is connected to the first terminal through a first switch element; and
at least another part other than the at least one part of the plurality of the first metal electrodes of the adjustment capacitance portion is connected to the second terminal through a second switch element.
17. The semiconductor device according to claim 12 , wherein the adjustment capacitance portion comprises:
a rough adjustment capacitance portion, wherein a plurality of metal electrodes that belongs to the at least one part of the plurality of first metal electrode of the adjustment capacitance portion is connected to one another, and connected to the first terminal through a first switch element and connected to the second terminal through a second switch element; and
a fine adjustment capacitance portion, wherein metal electrodes other than the at least one part of the plurality of the first metal electrodes of the adjustment capacitance portion are respectively connected to the first terminal through a third switch element and connected to the second terminal through a fourth switch element.