Phosphor of SiAlON crystal, method for producing phosphor and light emitting device
The present invention provides a phosphor comprising a cerium-activated sialon crystal having a basic composition represented by formula (1): (Sr 1-x ,Ce x ) α Si β Al γ O δ N ω formula: (1) (wherein, x is 0<x<1, α is 0<α≦3, and β, γ, δ and ω are numbers such that numerical values converted when α is 2 satisfy 5≦β≦9, 1≦γ≦5, 0≦δ≦1.5, and 10≦ω≦20), wherein the phosphor includes particles having a sphericity of 0.65 or more and emits yellow light by being excited by ultraviolet light, violet light or blue light.
1. A phosphor comprising a cerium-activated Sialon crystal having at least one basic composition selected from the group consisting of:
(Sr 1-x ,Ce x ) 2.0 Si 7 Al 3 ON 13 ;
(Sr 1-x ,Ce x ) 2.0 Si 8 Al 3 O 0.1 N 12 ;
(Sr 1-x ,Ce x ) 2.0 Si 7.2 Al 2 O 0.5 N 13 ;
(Sr 1-x ,Ce x ) 3.0 Si 9 Al 3 O 0.7 N 15 ;
(Sr 1-x ,Ce x ) 2.0 Si 8 Al 4 ON 14 ;
(Sr 1-x ,Ce x ) 2.8 Si 8 Al 4 O 0.5 N 15 ;
(Sr 1-x ,Ce x ) 2.0 Si 7 Al 2.5 O 0.1 N 12 ;
(Sr 1-x ,Ce x ) 2.0 Si 6 Al 4 ON 14 ;
(Sr 1-x ,Ce x ) 2.0 Si 8 Al 2.7 O 0.6 N 13 ; and
(Sr 1-x ,Ce x ) 2.0 Si 7 Al 2.1 O 0.2 N 14 ,
wherein x is 0<x<1
wherein the phosphor includes particles having a Wadell's sphericity of 0.65 or more and emits yellow light by being excited by ultraviolet light, violet light or blue light, and
wherein the Wadell's sphericity (ψ) is defined by the formula:
ψ=(A surface area of a sphere having a same volume as that of an actual particle)/(A surface area of an actual particle).
2. The phosphor according to claim 1 , wherein the phosphor belongs to an orthorhombic system.
3. The phosphor according to claim 1 , wherein the ultraviolet light, violet light or blue light has a peak wavelength in a range of 370 nm or more and 470 nm or less.
4. The phosphor according to claim 1 , wherein the phosphor has an average particle size of 5 μm or more and 80 μm or less.
5. The phosphor according to claim 1 , wherein the phosphor has an emission peak wavelength of 550 nm or more and 650 nm or less.
6. A method for producing a phosphor according to claim 1 , comprising:
a classification step of removing by classification a small particle portion which represents a phosphor powder having a particle size of 5 μm or less from the phosphor powder obtained by baking a mixture of phosphor raw materials that are raw materials for the phosphor; and
an annealing step of subjecting the phosphor powder after classification to high temperature annealing treatment in a nitrogen gas atmosphere at 1950 to 2050° C. for 3to 10 hours.
7. A light emitting device comprising:
a substrate;
a semiconductor light emitting element which is arranged on the substrate and emits ultraviolet light, violet light or blue light; and
a light emitting portion which is formed so as to cover a light emitting surface of the semiconductor light emitting element and contains a phosphor which emits visible light by being excited by light emitted from the semiconductor light emitting element,
wherein the phosphor comprises a phosphor according to claim 1 .
8. The light emitting device according to claim 7 , wherein the semiconductor light emitting element is a light emitting diode or a laser diode which emits light having a peak wavelength in a range of 370 nm or more and 470 nm or less.