Measurement of multiple patterning parameters
Methods and systems for evaluating the performance of multiple patterning processes are presented. Patterned structures are measured and one or more parameter values characterizing geometric errors induced by the multiple patterning process are determined. In some examples, a single patterned target and a multiple patterned target are measured, the collected data fit to a combined measurement model, and the value of a structural parameter indicative of a geometric error induced by the multiple patterning process is determined based on the fit. In some other examples, light having a diffraction order different from zero is collected and analyzed to determine the value of a structural parameter that is indicative of a geometric error induced by a multiple patterning process. In some embodiments, a single diffraction order different from zero is collected. In some examples, a metrology target is designed to enhance light diffracted at an order different from zero.
1. A method comprising:
receiving a first amount of measurement data associated with measurements of a first plurality of measurement sites on a surface of a semiconductor wafer, wherein each of the first plurality of measurement sites includes a single patterned metrology target having a first grating pitch generated by a first patterning step of a multiple patterning process and a multiple patterned metrology target having a second grating pitch generated by the first patterning step and a subsequent patterning step of the multiple patterning process, wherein the single patterned metrology target and the multiple patterned metrology target are disposed adjacent to one another at each measurement site;
determining at least one structural parameter value associated with each of the first plurality of measurement sites based on the first amount of measurement data and a combined measurement model by a computing system, wherein a model parameter characterizing the single patterned metrology target and a model parameter characterizing the multiple patterned metrology target are linked in the combined measurement model, and wherein the at least one structural parameter value is indicative of a geometric error induced by the multiple patterning process; and
storing the at least one structural parameter value in a memory.
2. The method of claim 1 , wherein the combined measurement model is a trained input-output model.
3. The method of claim 2 , further comprising:
receiving a second amount of measurement data associated with a second plurality of measurement sites, wherein each of the second plurality of measurement sites includes a single patterned metrology target having a first grating pitch generated by a first patterning step of a multiple patterning process and a multiple patterning metrology target having a second grating pitch generated by the first patterning step and a subsequent patterning step of the multiple patterning process, wherein at least one structural parameter value characterizing the single patterned metrology target and at least one structural parameter value characterizing the multiple patterned metrology target are known at each of the second plurality of measurement sites;
determining the input-output measurement model based at least in part on the second amount of measurement data; and
training the input-output measurement model based at least in part on the known structural parameter values.
4. The method of claim 3 , wherein the second amount of measurement data is associated with measurements of the second plurality of measurement sites on a Design of Experiments (DOE) wafer and the at least one structural parameter value characterizing the single patterned metrology target and the at least one structural parameter value characterizing the multiple patterned metrology target are measured by a reference measurement system at each of the second plurality of measurement sites.
5. The method of claim 3 , wherein the second amount of measurement data and the at least one structural parameter value characterizing the single patterned metrology target and the at least one structural parameter value characterizing the multiple patterned metrology target at each of the second plurality of measurement sites are simulated.
6. The method of claim 3 , further comprising:
extracting one or more features of the second amount of measurement data by reducing a dimension of the second amount of measurement data, and wherein the determining the input-output measurement model is based at least in part on the one or more features.
7. The method of claim 6 , wherein the reducing the dimension of the second amount of measurement data involves any of a principal components analysis, a non-linear principal components analysis, a selection of individual signals from the second amount of measurement data, and a filtering of the second amount of measurement data.
8. The method of claim 1 , wherein the combined measurement model is a multi-target model.
9. The method of claim 8 , further comprising:
receiving a second amount of measurement data associated with a second plurality of measurement sites, wherein each of the second plurality of measurement sites includes a single patterned metrology target having a first grating pitch generated by a first patterning step of a multiple patterning process and a multiple patterned metrology target having a second grating pitch generated by the first patterning step and a subsequent patterning step of the multiple patterning process, wherein at least one structural parameter value characterizing the single patterned metrology target and at least one structural parameter value characterizing the multiple patterned metrology target are known at each of the second plurality of measurement sites;
determining the multi-target model such that the multi-target model captures geometric features of the single patterned metrology target and the multiple patterned metrology target; and
training the multi-target model based on the second amount of measurement data and the known structural parameter values.
10. The method of claim 9 , further comprising:
generating a first library of measurement data based on simulations of the trained multi-target model for a range of structural parameter values associated with the single patterned metrology target; and
generating a second library of measurement data based on simulations of the trained multi-target model for a range of structural parameter values associated with the multiple patterned metrology target.
11. The method of claim 10 , wherein the determining of the at least one structural parameter value indicative of the geometric error induced by the multiple patterning process involves fitting the first amount of measurement data to the multi-target model, and wherein the fitting is based at least in part on the first and second measurement libraries.
12. A system comprising:
a metrology tool including an illumination source and a detector configured to perform measurements of a target structure; and
a computing system configured to:
receive a first amount of measurement data associated with measurements of a first plurality of measurement sites on a surface of a semiconductor wafer, wherein each of the first plurality of measurement sites includes a single patterned metrology target having a first grating pitch generated by a first patterning step of a multiple patterning process and a multiple patterned metrology target having a second grating pitch generated by the first patterning step and a subsequent patterning step of the multiple patterning process, wherein the single patterned metrology target and the multiple patterned metrology target are disposed adjacent to one another at each measurement site;
determine at least one structural parameter value associated with each of the first plurality of measurement sites based on the first amount of measurement data and a combined measurement model, wherein a model parameter characterizing the single patterned metrology target and a model parameter characterizing the multiple patterned metrology target are linked in the combined measurement model, and wherein the at least one structural parameter value is indicative of a geometric error induced by the multiple patterning process; and
store the at least one structural parameter value in a memory.
13. The system of claim 12 , wherein the combined measurement model is a trained input-output model.
14. The system of claim 13 , wherein the computing system is further configured to:
receive a second amount of measurement data associated with a second plurality of measurement sites, wherein each of the second plurality of measurement sites includes a single patterned metrology target having a first grating pitch generated by a first patterning step of a multiple patterning process and a multiple patterning metrology target having a second grating pitch generated by the first patterning step and a subsequent patterning step of the multiple patterning process, wherein at least one structural parameter value characterizing the single patterned metrology target and at least one structural parameter value characterizing the multiple patterned metrology target are known at each of the second plurality of measurement sites;
determine the input-output measurement model based at least in part on the second amount of measurement data; and
train the input-output measurement model based at least in part on the known structural parameter values.
15. The system of claim 14 , wherein the computing system is further configured to:
extract one or more features of the second amount of measurement data by reducing a dimension of the second amount of measurement data, and wherein the determining the input-output measurement model is based at least in part on the one or more features.
16. The system of claim 12 , wherein the combined measurement model is a multi-target model.
17. The system of claim 16 , wherein the computing system is further configured to:
receive a second amount of measurement data associated with a second plurality of measurement sites, wherein each of the second plurality of measurement sites includes a single patterned metrology target having a first grating pitch generated by a first patterning step of a multiple patterning process and a multiple patterned metrology target having a second grating pitch generated by the first patterning step and a subsequent patterning step of the multiple patterning process, wherein at least one structural parameter value characterizing the single patterned metrology target and at least one structural parameter value characterizing the multiple patterned metrology target are known at each of the second plurality of measurement sites;
determine the multi-target model such that the multi-target model captures geometric features of the single patterned metrology target and the multiple patterned metrology target; and
train the multi-target model based on the second amount of measurement data and the known structural parameter values.
18. The system of claim 17 , wherein the computing system is further configured to:
generate a first library of measurement data based on simulations of the trained multi-target model for a range of structural parameter values associated with the single patterned metrology target; and
generate a second library of measurement data based on simulations of the trained multi-target model for a range of structural parameter values associated with the multiple patterned metrology target.
19. The system of claim 18 , wherein the determining of the at least one structural parameter value indicative of the geometric error induced by the multiple patterning process involves fitting the first amount of measurement data to the multi-target model, and wherein the fitting is based at least in part on the first and second measurement libraries.