IP Library Granted Patent US 9,490,474
Granted Patent B2
US 9,490,474 · App. 13/248,700 · Granted Nov 8, 2016

Method for manufacturing positive electrode active material for energy storage device and energy storage device

Inventors: Kuniharu Nomoto (Kanagawa, JP); Takuya Miwa (Kanagawa, JP); Masaki Yamakaji (Kanagawa, JP); Takahiro Kawakami (Kanagawa, JP)
Assignee: Semiconductor Energy Laboratory Co., LTD.
H01M4/0433H01M4/0471H01M4/1397H01M4/366H01M4/5825H01M4/625H01M4/136Y02E60/122Y02P70/54
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Quick Facts
Patent No.
US 9,490,474
App. No.
13/248,700
Granted
Nov 8, 2016
Kind
B2
Abstract

An energy storage device having high capacity per weight or volume and a positive electrode active material for the energy storage device are manufactured. A surface of a main material included in the positive electrode active material for the energy storage device is coated with two-dimensional carbon. The main material included in the positive electrode active material is coated with a highly conductive material which has a structure expanding two-dimensionally and whose thickness is ignorable, whereby the amount of carbon coating can be reduced and an energy storage device having capacity close to theoretical capacity can be obtained even when a conduction auxiliary agent is not used or the amount of the conduction auxiliary agent is extremely small. Accordingly, the amount of carbon coating in a positive electrode and the volume of the conduction auxiliary agent can be reduced; consequently, the volume of the positive electrode can be reduced.

Claims (31)

1. A method for manufacturing a positive electrode active material for an energy storage device, comprising the steps of:

forming a mixture by mixing raw materials to be the positive electrode active material;

performing a first baking on the mixture;

grinding the mixture;

adding a graphene oxide to the ground mixture;

performing a second baking to form a reaction product, and to reduce the graphene oxide, whereby a surface of the reaction product is coated with graphene; and

grinding the reaction product after the second baking to obtain the positive electrode active material,

wherein the reaction product comprises lithium iron phosphate, lithium nickel phosphate, lithium cobalt phosphate, or lithium manganese phosphate, and

wherein the graphene has an angle of greater than 0° and less than 3° with respect to a surface of the positive electrode active material.

2. The method for manufacturing a positive electrode active material for an energy storage device according to claim 1 , wherein the mixture is ground before the first baking.

3. The method for manufacturing a positive electrode active material for an energy storage device according to claim 1 , wherein a thickness of the graphene is greater than or equal to 0.34 nm and less than or equal to 3.4 nm.

4. The method for manufacturing a positive electrode active material for an energy storage device according to claim 1 , wherein a particle diameter of the reaction product is less than or equal to 50 nm.

5. The method for manufacturing a positive electrode active material for an energy storage device according to claim 1 , wherein the first baking is performed in an atmosphere of a rare gas, nitrogen, or hydrogen or under reduced pressure.

6. The method for manufacturing a positive electrode active material for an energy storage device according to claim 1 , wherein the second baking is performed in an atmosphere of a rare gas, nitrogen, or hydrogen or under reduced pressure.

7. A method for manufacturing a positive electrode active material for an energy storage device, comprising the steps of:

forming a mixture by mixing raw materials to be the positive electrode active material;

performing a first baking on the mixture;

grinding the mixture;

adding a graphene oxide to the ground mixture;

pressing and molding the mixture including the graphene oxide into a pellet;

performing a second baking to form a reaction product, and to reduce the graphene oxide, whereby a surface of the reaction product is coated with graphene; and

grinding the reaction product after the second baking to obtain the positive electrode active material,

wherein the reaction product comprises lithium iron phosphate, lithium nickel phosphate, lithium cobalt phosphate, or lithium manganese phosphate, and

wherein the graphene has an angle of greater than 0° and less than 3° with respect to a surface of the positive electrode active material.

8. The method for manufacturing a positive electrode active material for an energy storage device according to claim 7 , wherein the mixture is ground before the first baking.

9. The method for manufacturing a positive electrode active material for an energy storage device according to claim 7 , wherein a thickness of the graphene is greater than or equal to 0.34 nm and less than or equal to 3.4 nm.

10. The method for manufacturing a positive electrode active material for an energy storage device according to claim 7 , wherein a particle diameter of the reaction product is less than or equal to 50 nm.

11. The method for manufacturing a positive electrode active material for an energy storage device according to claim 7 , wherein the first baking is performed in an atmosphere of a rare gas, nitrogen, or hydrogen or under reduced pressure.

12. The method for manufacturing a positive electrode active material for an energy storage device according to claim 7 , wherein the second baking is performed in an atmosphere of a rare gas, nitrogen, or hydrogen or under reduced pressure.

13. The method for manufacturing a positive electrode active material for an energy storage device according to claim 1 , wherein the step of adding the graphene oxide to the ground mixture is performed in acetone with a ball mill.

14. The method for manufacturing a positive electrode active material for an energy storage device according to claim 7 , wherein the step of adding the graphene oxide to the ground mixture is performed in acetone with a ball mill.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 29, 2011
From: NOMOTO, KUNIHARU; MIWA, TAKUYA; YAMAKAJI, MASAKI; KAWAKAMI, TAKAHIRO
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 026992/0846 →
Priority Claims (1)
JP 2010-228602 · Oct 8, 2010 · national
Continuity (1)
Related Publication 20120088156A1 · Apr 12, 2012