Method for manufacturing photoelectric conversion device
A method for manufacturing a photoelectric conversion device, comprising: a first step of forming a buffer layer on a light absorption layer containing a group I-III-VI compound or a group I-II-IV-VI compound; and a second step of bringing a surface of the buffer layer into contact with a first solution containing sulfide ions or hydrogen sulfide ions.
1. A method of producing a photoelectric conversion device, comprising:
a first step of forming a buffer layer containing a metal sulfide on a light absorption layer containing a group I-III-VI compound or a group I-II-IV-VI compound; and
a second step of bringing a surface of the buffer layer into contact with a first solution containing sulfide ions or hydrogen sulfide ions.
2. The method of producing a photoelectric conversion device according to claim 1 , wherein the first solution is a basic solution.
3. The method of producing a photoelectric conversion device according to claim 1 , wherein the second step is performed by immersing the light absorption layer in the first solution.
4. The method of producing a photoelectric conversion device according to claim 1 wherein the second step is performed by applying the first solution onto the buffer layer.
5. The method of producing a photoelectric conversion device according to claim 1 further comprising:
a step of annealing the light absorption layer and the buffer layer, after the second step.
6. The method of producing a photoelectric conversion device according to claim 1 further comprising:
a third step of forming a second buffer layer on the buffer layer, after the second step.