Method for forming a semiconductor structure
The present invention provides a method for forming a semiconductor structure, including: firstly, providing a substrate, a fin structure being disposed on the substrate, a gate structure crossing over the fin structure, and a first hard mask being disposed on the top surface of the gate structure. Next, a dielectric layer is formed, covering the substrate, the fin structure and the gate structure. Afterwards, a second hard mask is formed on the top surface of the first hard mask, where the width of the second hard mask is larger than the width of the first hard mask, a bottom surface of the second hard mask and a top surface of the first hard mask are on the same level. An etching process is then performed to remove parts of the dielectric and parts of the fin structure.
1. A method for forming a semiconductor structure, at least comprising the following steps:
providing a substrate, a fin structure disposed on the substrate, and a gate structure crossing the fin structure, a first hard mask being disposed on the top surface of the gate structure, wherein the gate structure only covers parts of the fin structure;
forming a dielectric layer, covering the substrate, the fin structure and the gate structure;
forming a second hard mask on the top surface of the first hard mask, wherein the width of the second hard mask is larger than the width of the first hard mask, and a bottom surface of the second hard mask, a top surface of the first hard mask, and a top surface of the dielectric layer are on a same level;
performing an etching process, to remove parts of the dielectric layer and remove parts of the fin structure; and
forming an epitaxial layer in the fin structure, wherein the second hard mask still exists on the top surface of the first hard mask after the epitaxial layer is formed.
2. The method of claim 1 , wherein after the etching process is performed, except for the dielectric layer which is disposed right below the second hard mask and on two sides of the gate structure, other parts of the dielectric layer are removed entirely.
3. The method of claim 2 , wherein after the etching process is performed, the dielectric layer which does not be removed is defined as at least one spacer.
4. The method of claim 3 , wherein the spacer has a vertical edge.
5. The method of claim 1 , wherein after removing parts of the fin structure, at least one recess is formed in fin structure on two sides of the gate structure.
6. The method of claim 5 , wherein the epitaxial layer is disposed in each recess.
7. The method of claim 6 , wherein the material of the epitaxial layer comprises silicon-germanium or silicon-carbide.
8. The method of claim 1 , wherein after the etching process is performed, the second hard mask is disposed on the top surface of the first hard mask.
9. The method of claim 1 , wherein after the dielectric layer is formed, the dielectric layer covers the top surface of the first hard mask.
10. The method of claim 9 , further comprising performing a planarization process, to remove parts of the dielectric layer, and to expose the top surface of the first hard mask, and the second hard mask then being formed on the top surface of the first hard mask.
11. The method of claim 1 , wherein the etching selectivity of the first hard mask to the second hard mask is larger than 5.
12. The method of claim 1 , wherein the material of the first hard mask comprises silicon oxide.
13. The method of claim 1 , wherein the material of the second hard mask comprises nitrogen silicon carbide.
14. The method of claim 1 , wherein the first hard mask has a first height, the gate structure has a second height, and the ratio of the first height to the second height is smaller than/equal to 0.3.