Fluorine-containing polymerized HMDSO applications for OLED thin film encapsulation
Methods for forming an OLED device are described. An encapsulation structure having organic buffer layer and an interface layer disposed on the organic buffer layer sandwiched between barrier layers is deposited over an OLED structure. In one example, the method includes depositing a first barrier layer on a region of a substrate having an OLED structure disposed thereon, depositing a buffer layer with a fluorine-containing plasma formed from a first gas mixture containing a polymer gas precursor and a fluorine containing gas on the first barrier layer, depositing an interface layer on the buffer layer with a second gas mixture containing the polymer gas precursor, and depositing a second barrier layer on the interface layer.
1. A method for forming an encapsulating structure on an organic light emitting diode (OLED) device, comprising:
depositing a first barrier layer on a region of a substrate having an OLED structure disposed thereon;
depositing a buffer layer with a fluorine-containing plasma formed from a first gas mixture containing a polymer gas precursor and a fluorine containing gas on the first barrier layer;
depositing an interface layer on the buffer layer with a second gas mixture containing the polymer gas precursor, the interface layer having a gradient fluorine concentration; and
depositing a second barrier layer on the interface layer.
2. The method of claim 1 , wherein depositing the interface layer further comprises:
gradually reducing an amount of the fluorine containing gas supplied in the second gas mixture.
3. The method of claim 1 , wherein depositing the interface layer further comprises:
forming the interface layer as a substantially fluorine element free layer.
4. The method of claim 3 , wherein forming the interface layer further comprises:
terminating supply of the fluorine containing gas in the second gas mixture to form the interface layer.
5. The method of claim 1 , wherein the buffer layer comprises fluorinated plasma-polymerized hexamethyldisiloxane (pp-HMDSO:F).
6. The method of claim 1 , wherein the polymer gas precursor supplied in the first and the second gas mixture is HMDSO gas.
7. The method of claim 1 , wherein the fluorine-containing gas is selected from the group consisting of NF 3 , SiF 4 , F 2 , CF 4 , and combinations thereof.
8. The method of claim 1 , wherein the fluorine-containing gas and HMDSO gas supplied in the first gas mixture has a flow rate ratio between about 0.25 and about 1.5.
9. The method of claim 8 , wherein the single process chamber is a PECVD chamber.
10. The method of claim 1 , wherein the buffer layer and the interface layer are formed in a single processing chamber.
11. The method of claim 1 , wherein the interface layer has a thickness of about 10 percent of a thickness of the buffer layer.
12. The method of claim 1 , wherein the polymer gas precursor supplied in the second gas mixture has a flow rate about 30 percent to 60 percent lower than that of supplied in the first gas mixture.
13. The method of claim 1 , further comprising:
depositing a stress reduction layer between the interface layer and the second barrier layer.
14. The method of claim 13 , wherein the stress reduction layer is comprises silicon oxynitride.
15. The method of claim 1 , wherein the first and second barrier layers comprises silicon nitride.
16. The method of claim 1 , wherein the polymer gas precursor is supplied to a processing chamber for depositing the buffer layer and the interface layer through a vapor delivery system coupled to the processing chamber.
17. A method for forming an encapsulating structure on an organic light emitting diode (OLED) device, comprising:
supplying a first gas mixture including a HMDSO gas and a fluorine containing gas in a processing chamber to form a buffer layer on a region of a substrate having an OLED structure disposed thereon; and
supplying a second gas mixture including the HMDSO gas without the fluorine containing gas or with a diminished flow rate of the fluorine containing gas in the same processing chamber to form an interface layer having a gradient fluorine concentration on the buffer layer.