Package including a plurality of stacked semiconductor devices including a capacitance enhanced through via and method of manufacture
View Patent ↗A package can include a first, second and third semiconductor devices stacked in a first direction. A first semiconductor device can include a first through via between a first side and a second side opposite the first side of the first semiconductor device and a first circuit that provides a first reference potential at a first circuit output, electrically connected to the first through via in a normal mode of operation. A second semiconductor device can include a second through via, a second circuit, and a third circuit. A second circuit can be electrically connected to the first through via at the second side. A third circuit can provide a second reference potential and can be electrically connected to the second through via at the first side. The third circuit and the third semiconductor device can receive the second reference potential exclusive of the first semiconductor device.
1. A package, comprising:
a first semiconductor device, a second semiconductor device, and a third semiconductor device stacked in a first direction;
the first semiconductor device including
a first through via providing a first electrical connection in the first direction between a first side and a second side opposite the first side of the first semiconductor device; and
a first circuit, the first circuit provides a first reference potential at a first circuit output, the first circuit output is electrically connected to the first through via at the first side when the first semiconductor device is in a normal mode of operation; and
the second semiconductor device including a second through via, a second circuit, and a third circuit;
the second through via providing a second electrical connection in the first direction between a first side and a second side opposite the first side of the second semiconductor device;
the second circuit is electrically connected to the first through via at the second side of the first semiconductor device to receive the first reference potential; and
the third circuit provides a second reference potential at a third circuit output, the third circuit output is electrically connected to the second through via at the first side; and
the second through via is electrically connected between the third semiconductor device and the third circuit and the third semiconductor device receives the second reference potential exclusive of the first semiconductor device.
2. The package of claim 1 , wherein:
The second circuit includes a second circuit output electrically connected to the first through via at the second side of the first semiconductor device and the first circuit and the second circuit provides the first reference potential.
3. The package of claim 1 , wherein:
the second semiconductor device includes a third through via providing a third electrical connection in the first direction between the first side and the second side opposite the first side of the second semiconductor device, the third semiconductor device is electrically connected to the third through via to receive the first reference potential at the second side of the second semiconductor device.
4. The package of claim 3 , wherein:
the third semiconductor device includes a fourth circuit having a fourth circuit output electrically connected to the third through via at the second side of the second semiconductor device, the first circuit and the fourth circuit provides the first reference potential.
5. The package of claim 1 , wherein:
the third semiconductor device includes a fifth circuit, the fifth circuit includes a fifth circuit output, the second through via electrically connected between the third circuit output and the fifth circuit output and the third circuit and fifth circuit provide the second reference potential.
6. The package of claim 1 , wherein:
the first reference potential is an internal power supply potential; and
the first semiconductor device includes first semiconductor device internal circuits that are coupled to receive and are powered by the internal power supply potential.
7. The package of claim 6 , wherein:
the second semiconductor device includes second semiconductor device internal circuits that are coupled to receive and are powered by the internal power supply potential.
8. The package of claim 1 , wherein:
the first semiconductor device includes a third through via providing a third electrical connection in the first direction between the first side and the second side opposite the first side of the first semiconductor device; and
the first through via has a first capacitance value and the third through via has a second capacitance value that is less than the first capacitance value.
9. The package of claim 8 , wherein:
the first capacitance value is substantially greater than the second capacitance value.
10. The package of claim 9 , further including:
the first capacitance value is at least 10 times greater than the second capacitance value.
11. A package, comprising:
a first semiconductor device, a second semiconductor device, and a third semiconductor device stacked in a first direction;
the first semiconductor device including
a first circuit, the first circuit provides a first reference potential at a first circuit output in a normal mode of operation; and
the second semiconductor device including a first through via, a second circuit, and a third circuit;
the first through via providing a first electrical connection in the first direction between a first side and a second side opposite the first side of the second semiconductor device;
the first circuit output is electrically connected to the first through via at the second side of the second semiconductor device and the second circuit is electrically connected to the first through via at the first side of the second semiconductor device; and
the third circuit provides a second reference potential at a third circuit output; and
the third semiconductor device including a second through via and a fourth circuit;
the second through via providing a second electrical connection in the first direction between a first side and a second side opposite the first side of the third semiconductor device; and
the second through via provides an electrical connection between the third circuit output and the fourth circuit wherein the third semiconductor device receives the second reference potential exclusive of the first semiconductor device.
12. The package of claim 11 , wherein:
the second circuit includes a second circuit output electrically connected to the first through via at the first side of the second semiconductor device, the first circuit and the second circuit provides the first reference potential.
13. The package of claim 11 , wherein:
the third semiconductor device includes a third through via providing a third electrical connection in the first direction between the first side and the second side opposite the first side of the third semiconductor device, the third through via receives the first reference potential at the second side of the third semiconductor device.
14. The package of claim 13 , wherein:
the third semiconductor device includes a fifth circuit having a fifth circuit output electrically connected to the third through via at the first side of the third semiconductor device, the first circuit and fifth circuit provides the first reference potential.
15. The package of claim 11 , wherein:
the fourth circuit includes a fourth circuit output, the second through via electrically connected between the third circuit output and the fourth circuit output and the third circuit and fourth circuit provide the second reference potential.
16. The package of claim 11 , wherein:
the first reference potential is an internal power supply potential; and
the first semiconductor device includes first semiconductor device internal circuits that are coupled to receive and are powered by the internal power supply potential.
17. The package of claim 16 , wherein:
the second semiconductor device includes second semiconductor device internal circuits that are coupled to receive and are powered by the internal power supply potential.
18. The package of claim 11 , further including:
the second reference potential is an internal power supply potential; and
the third semiconductor device includes third semiconductor device internal circuits that are coupled to receive and are powered by the internal power supply potential.
19. The package of claim 11 , wherein:
the second semiconductor device includes a fourth through via providing a fourth electrical connection in the first direction between the first side and the second side opposite the first side of the second semiconductor device; and
the first through via has a first capacitance value and the fourth through via has a second capacitance value that is less than the first capacitance value.
20. The package of claim 19 , wherein:
the first capacitance value is substantially greater than the second capacitance value.