Solid-state image sensing device with electrode implanted into deep trench
A solid-state image sensing device is provided including a first semi-conducting layer of first conductivity, a second semi-conducting layer of first conductivity disposed on the first semi-conducting layer, a semiconductor region of second conductivity different from the first conductivity disposed in the second semi-conducting layer, a deep trench configured to isolate a plurality of neighboring pixels from each other, and an electrode implanted into the deep trench, where the semiconductor region of second conductivity, the second semi-conducting layer, and the first semi-conducting layer are disposed in that order from a proximal side to a distal side, the second semi-conducting layer is split by the deep trench into sections that correspond to the pixels, an impurity concentration of first conductivity of the first semi-conducting layer is higher than an impurity concentration of first conductivity of the second semi-conducting layer, and the deep trench contacts the first semi-conducting layer.
1. A solid-state image sensing device including a plurality of pixels, comprising:
a first semi-conducting layer of first conductivity;
a second semi-conducting layer of first conductivity disposed on the first semi-conducting layer;
a semiconductor region of second conductivity different from the first conductivity disposed in the second semi-conducting layer;
a deep trench provided for each of the plurality of pixels and configured to isolate the neighboring pixels from each other; and
an electrode implanted into the deep trench,
wherein
the semiconductor region of second conductivity, the second semi-conducting layer, and the first semi-conducting layer are disposed in that order from a proximal side to a distal side,
the second semi-conducting layer is split by the deep trench into sections that correspond to the pixels,
an impurity concentration of first conductivity of the first semi-conducting layer is higher than an impurity concentration of first conductivity of the second semi-conducting layer, and
the deep trench contacts the first semi-conducting layer.
2. The solid-state image sensing device according to claim 1 , wherein an impurity concentration of first conductivity of the first semi-conducting layer is higher than 2*10 18 cm −3 .
3. The solid-state image sensing device according to claim 1 , wherein an impurity concentration of first conductivity of the first semi-conducting layer is higher than 2*10 19 cm −3 .
4. The solid-state image sensing device according to claim 1 , wherein the first semi-conducting layer is shared by the plurality of pixels.
5. The solid-state image sensing device according to claim 1 , wherein the deep trench penetrates the first semi-conducting layer.
6. The solid-state image sensing device according to claim 1 , wherein the electrode is polysilicon of second conductivity.
7. The solid-state image sensing device according to claim 1 , wherein each of the pixels is a phototransistor.
8. The solid-state image sensing device according to claim 1 , wherein each of the pixels is a pin photodiode.
9. The solid-state image sensing device according to claim 1 , wherein each of the pixels is an avalanche photodiode.