IP Library Granted Patent US 9,530,968
Granted Patent B2
US 9,530,968 · App. 11/351,713 · Granted Dec 27, 2016

Light emitting element and light emitting device

Inventors: Junichiro Sakata (Kanagawa, JP); Takahiro Kawakami (Kanagawa, JP); Hisao Ikeda (Kanagawa, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H01L51/006H01L51/5012H01L27/3244H01L51/0059H01L2251/5315H01L2251/5323
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Quick Facts
Patent No.
US 9,530,968
App. No.
11/351,713
Granted
Dec 27, 2016
Kind
B2
Abstract

The present invention provides a light emitting element whose driving voltage is low, and a light emitting element having longer lifetime. Moreover, the invention provides a light emitting element with high manufacturing yield. A light emitting element has a layer containing an organic material and an inorganic material, wherein activation energy of electrical conductivity of the layer containing the organic material and the inorganic material, is 0.01 eV or more and less than 0.30 eV. Preferably, the activation energy of electrical conductivity of the layer containing the organic material and the inorganic material, is 0.01 eV or more and less than 0.26 eV. More preferably, the activation energy of the electrical conductivity of the layer containing the organic material and the inorganic material, is 0.01 eV or more and less than 0.20 eV.

Claims (53)

1. A light emitting element comprising:

an anode;

a first layer over and in contact with the anode;

a light emitting layer over the first layer;

a second layer over the light emitting layer; and

a cathode over the second layer,

wherein each of the first layer and the second layer has a laminated structure comprising a first mixed layer and a second mixed layer,

wherein the first mixed layer comprises a first organic material and molybdenum oxide, and

wherein the second mixed layer comprises a second organic material and molybdenum oxide.

2. The light emitting element according to claim 1 , wherein activation energy of electrical conductivity of each of the first layer and the second layer is 0.01 eV or more and less than 0.30 eV.

3. The light emitting element according to claim 1 , wherein a concentration of the molybdenum oxide is 5 wt % to 95 wt %.

4. The light emitting element according to claim 1 ,

wherein each of the first mixed layer and the second mixed layer has an absorption peak in a visible light region.

5. The light emitting element according to claim 4 ,

wherein the first organic material is any one of N,N′-bis(spiro-9,9′-bifluoren-2-yl)-N,N′-diphenylbenzidine and 4,4′-bis[N-(4-biphenylyl)-N-phenylamino]biphenyl.

6. The light emitting element according to claim 1 ,

wherein the second layer is in direct contact with the cathode.

7. A light emitting device comprising:

a light emitting element, the light emitting element comprising:

an anode;

a first layer over and in contact with the anode;

a light emitting layer over the first layer;

a second layer over the light emitting layer; and

a cathode over the second layer,

wherein each of the first layer and the second layer has a laminated structure comprising a first mixed layer and a second mixed layer,

wherein the first mixed layer comprises a first organic material and molybdenum oxide, and

wherein the second mixed layer comprises a second organic material and molybdenum oxide.

8. The light emitting device according to claim 7 , wherein activation energy of electrical conductivity of each of the first layer and the second layer is 0.01 eV or more and less than 0.30 eV.

9. The light emitting device according to claim 7 , wherein a concentration of the molybdenum oxide is 5 wt % to 95 wt %.

10. The light emitting device according to claim 7 ,

wherein each of the first mixed layer and the second mixed layer has an absorption peak in a visible light region.

11. The light emitting device according to claim 10 ,

wherein the first organic material is any one of N,N′-bis(spiro-9,9′-bifluoren-2-yl)-N,N′-diphenylbenzidine and 4,4′-bis[N-(4-biphenylyl)-N-phenylamino]biphenyl.

12. The light emitting device according to claim 7 ,

wherein the second layer is in direct contact with the cathode.

13. An electronic appliance comprising:

a light emitting element, the light emitting element comprising:

an anode;

a first layer over and in contact with the anode;

a light emitting layer over the first layer;

a second layer over the light emitting layer; and

a cathode,

wherein each of the first layer and the second layer has a laminated structure comprising a first mixed layer and a second mixed layer,

wherein the first mixed layer comprises a first organic material and molybdenum oxide, and

wherein the second mixed layer comprises a second organic material and molybdenum oxide.

14. The electronic appliance according to claim 13 , wherein activation energy of electrical conductivity of each of the first layer and the second layer is 0.01 eV or more and less than 0.30 eV.

15. The electronic appliance according to claim 13 , wherein a concentration of the molybdenum oxide is 5 wt % to 95 wt %.

16. The electronic appliance according to claim 13 ,

wherein each of the first mixed layer and the second mixed layer has an absorption peak in a visible light region.

17. The electronic appliance according to claim 16 ,

wherein the first organic material is any one of N,N′-bis(spiro-9,9′-bifluoren-2-yl)-N,N′-diphenylbenzidine and 4,4′-bis[N-(4-biphenylyl)-N-phenylamino]biphenyl.

18. The electronic appliance according to claim 13 ,

wherein the second layer is in direct contact with the cathode.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 10, 2006
From: SAKATA, JUNICHIRO; KAWAKAMI, TAKAHIRO; IKEDA, HISAO
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 017563/0013 →
Priority Claims (1)
JP 2005-037090 · Feb 15, 2005 · national
Continuity (1)
Related Publication 20060180812A1 · Aug 17, 2006