Integrated analysis devices and related fabrication methods and analysis techniques
Provided are integrated analysis devices having features of macroscale and nanoscale dimensions, and devices that have reduced background signals and that reduce quenching of fluorophores disposed within the devices. Related methods of manufacturing these devices and of using these devices are also provided.
1. An analysis device, comprising:
a first substrate;
a second substrate;
a first thin film surmounting at least a portion of the first substrate, the second substrate, or both, wherein the first thin film prevents a fluorescent molecule disposed within the device from being quenched by the first substrate, second substrate, or both; and
a first inlet port extending through at least a portion of the first substrate, the second substrate, or both, so as to place a first interconnector channel in fluid communication with the environment exterior to the analysis device; and
a first front-end branched channel region, comprising at least a primary channel characterized as having a cross-sectional dimension of less than about 10,000 nm and at least two secondary channels, placing the first interconnector channel into fluid communication with a nanochannel analysis region,
the nanochannel analysis region comprising a plurality of nanochannels, wherein the length of each nanochannel is from about 0.1 micron to about 50 cm, and wherein the ratio of the cross-sectional dimensions of the primary channel to the cross-sectional dimensions of each nanochannel is in the range of from about 100 to about 10,000.
2. The analysis device of claim 1 , wherein the first substrate, the second substrate, or both, comprises silicon, SiGe, Ge, strained silicon, GeSbTe, AlGaAs, AlGaInP, AlGaN, AlGaP, GaAsP, GaAs, GaN, GaP, InAlAs, InAlP, InSb, GaInAlAs, GaInAlN, GaInAsN, GaInAsP, GaInAs, GaInN, GaInP, GaSb, InN, InP, CdSe, CdTe, zinc selenide (ZnSe), HgCdTe, ZnO, ZnTe, zinc sulfide (ZnS), aluminum, aluminum oxide, stainless steel, Kapton™, metal, ceramic, plastic, polymer, sapphire, silicon carbide, silicon on insulator (SOI), astrosital, barium borate, barium fluoride, sillenite crystals BGO/BSO/BTO, bismuth germanate, calcite, calcium fluoride, cesium iodide, FeILiNbO3, fused quartz, quartz, fused silica, glass, SiO2, gallium, gadolinium garnet, potassium dihydrogen phosphate (KDP), KRS-5, potassium titanyl phosphate, lead molibdate, lithium fluoride, lithium iodate, lithium niobate, lithium tantalate, magnesium fluoride, potassium bromide, titanium dioixde, sodium chloride, tellurium dioxide, spin-on glass, UV curable materials, soda lime glass, any compound above in an hydrogenated form, stoichiometric variations of the above compounds, or any combinations thereof.
3. The analysis device of claim 1 , wherein the first substrate comprises a thickness of about 10 nm to about 10,000 nm.
4. The analysis device of claim 1 , wherein the first front-end branched channel region comprises a splitter structure dividing the primary channel into least two secondary channels.
5. The analysis device of claim 4 , wherein the splitter structure comprises at least one surface angled in the range of from about 0 and about 90 degrees relative to the centerline of the primary channel.
6. The analysis device of claim 4 wherein the width of each secondary channel is about 30% to about 70% of the width of the primary channel.
7. The analysis device of claim 4 , wherein the length of a secondary channel is about 1 micron to about 500 microns.
8. The analysis device of claim 4 , wherein each of the secondary channel is divided into two tertiary channels by a splitter comprising at least one surface angled in the range of from about 0 and about 90 degrees relative to the centerline of the secondary channel.
9. The analysis device of claim 4 , wherein the splitter is configured so as to define an overhang that shields at least a portion of the secondary channel from the primary channel.
10. The analysis device of claim 1 , wherein at least one of the plurality of nanochannels comprises a varying width, a varying depth, or both.
11. The analysis device of claim 1 , wherein the ratio of a cross-sectional dimension of the port to a cross-sectional dimension of each of the plurality of nanochannels is in the range of from about 1 to about 10 7 .
12. The analysis device of claim 1 , wherein the length of each of the plurality of nanochannels is from about 50 microns to about 5000 microns.
13. The analysis device of claim 4 , wherein the splitter structure comprises a contoured portion.
14. The analysis device of claim 13 , wherein the splitter structure is configured such that a fluidborne body propelled through the primary channel by a gradient is essentially equally likely to enter either secondary channel downstream from the splitter structure.
15. The analysis device of claim 9 , wherein the overhang is about 5% to about 50% of the width of the secondary channel.
16. The analysis device of claim 9 , wherein the width of a secondary channel is about 30% to about 70% of the width of the primary channel.
17. The analysis device of claim 1 , wherein the first thin film comprises a material selected from the group consisting of silicon nitride, silicon oxynitride, SiOxNy, hydrogenated silicon dioxide, hydrogenated silicon nitride, hydrogenated silicon oxinitride, high K dielectrics, TiSiO, TiO, TiN, titanium oxides, hydrogenatedtitanium oxides, titanium nitrides, hydrogenated titanium nitrides, TaO, TaSiO, TaOxNy, Ta 2 O 5 , TaCN, tantalum oxides, hydrogenated tantalum oxides, tantalum nitrides, hydrogenated tantalum nitrides, HfO 2 , HfSiO 2 , HfZrOx, HfN, HfON, HfSiN, HfSiON, hafnium oxides, hydrogenated hafnium oxides, hafnium nitrides, hydrogenated hafnium nitrides, ZrO2, ZrSiO2, ZrN, ZrSiN, ZrON, ZrSiON, zirconium oxides, hydrogenated zirconium oxides, zirconium nitrides, hydrogenated zirconium nitrides, Al 2 O 3 , AlN, TiAlN, TaAlN, WAlN, aluminum oxides, hydrogenated aluminum oxides, aluminum nitrides, hydrogenated aluminum nitrides, SiN, WN, low K dielectrics, fluorine doped silicon dioxide, carbon doped silicon dioxide, porous silicon dioxide, porous carbon doped silicon dioxide, spin-on organic polymeric dielectrics, graphite, graphene, carbon nano-tubes, plastics, polymer, organic molecules, self-assembled monolayers, self-assembled multi-layers, a lipid bi-layer, any of the aforementioned compounds in a hydrogenated form, a stoichiometric variation of any of the foregoing, and any combination thereof.
18. The analysis device of claim 1 , wherein the first thin film comprises silicon nitride.
19. The analysis device of claim 1 , wherein the first thin film surmounts a portion of the first substrate.
20. The analysis device of claim 1 , wherein the first thin film surmounts a portion of the second substrate.
21. The analysis device of claim 1 , wherein the first thin film defines at least a portion of a channel disposed between the first substrate and the second substrate.
22. The analysis device of claim 1 , wherein at least one of the first or second substrates permitting at least partial passage of electromagnetic radiation characterized as having at least one wavelength in the range of from about 10 nm to about 2500 nm.
23. The analysis device of claim 22 , wherein the first thin film reduces the background signal of the device when the device is illuminated by electromagnetic radiation of the excitation wavelength.
24. The analysis device of claim 22 , wherein the first substrate, the second substrate, or both, comprises silicon.