Trenched super/ultra capacitors and methods of making thereof
View Patent ↗A method of manufacturing trenched electrochemical double layer capacitors is provided. One aspect of the method employs state-of-the art processes used in semi-conductor wafer manufacturing such as photolithography etching for creating trenches in the electrodes of the double layer capacitor. Another aspect of the method employs a die-saw process, which is scalable and low-cost. The trenched super/ultra capacitors made by the disclosed methods have the combined advantage of higher energy storage capacity than conventional planar super/ultra capacitors due to the increased surface area and higher power density than commonly used Li-ion batteries due to the faster charging time and higher instantaneous energy burst power. The manufacturing processes also have the advantage of better manufacturability, scalability and reduced manufacturing cost.
1. A process of making an electrochemical double layer capacitor comprising the steps of:
a) producing a first trenched electrode by forming an electrode layer on a first substrate having a first trench opening therein;
b) producing a second trenched electrode by forming an electrode layer on a second substrate having a second trench opening therein, wherein the second trench opening in the second substrate having a 3-dimensional shape complimentary to the first trench opening in the first substrate and a remaining protruding structure substantially the same in shape as the first trench opening in the first substrate;
c) combining the first trenched electrode and the second trenched electrode such that the protruding structure in the second trenched electrode substantially fit into the trench opening in the first trenched electrode and leaving a gap between the first electrode and the second electrode; and
d) filling the gap between the first trenched electrode and second trenched electrode with an electrolyte.
2. The process according to claim 1 , further comprising forming the first trench opening in the first substrate and forming the second trench opening in the second substrate.
3. The process according to claim 2 , wherein the steps of forming the first trench opening in the first substrate and forming the second trench opening in the second substrate comprises photolithography etching.
4. The process according to claim 1 , wherein the first substrate and the second substrate are highly doped silicon substrate.
5. The process according to claim 1 , wherein the process further comprising forming a metal barrier layer on the first substrate prior to forming the electrode layer on the first substrate and/or forming a metal barrier layer on the second substrate prior to forming the electrode layer on the second substrate, and wherein forming the electrode layer on the first substrate and/or forming the electrode layer on the second substrate comprises sputtering an electrode material on the metal barrier layer.
6. The process according to claim 5 , wherein the electrode material is polypyrrole (PPY), activated carbon, graphene or carbon nanotubes.
7. The process according to claim 1 , wherein the electrolyte is electrolytic acid, KOH/acetonitrile, or a gel electrolyte.
8. The process according to claim 1 , wherein the first trench opening in the first substrate is cylindrical in shape having a first diameter, the protruding structure in the second substrate is cylindrical in shape having a second diameter, and wherein the second diameter is smaller than the first diameter.
9. The process according to claim 1 , wherein the first trench opening in the first substrate comprises a cylinder of about 1 μm in diameter and about 25 μm to about 75 μm in depth.
10. The process according to claim 1 , further comprising back grinding the first substrate and the second substrate and depositing a conductive metal material.
11. The process according to claim 10 , wherein the conductive metal material comprises a Ti—Ni—Ag trimetal material.
12. A process of making an electrochemical double layer capacitor comprising the steps of:
a) providing a conductive plate, wherein the conductive plate is attached to an insulating substrate board via a non-conductive adhesive layer and is fitted with contact pads on both edges;
b) forming a plurality of trenches by sawing the conductive plate at a predetermined pitch size to a depth where the adhesive layer is exposed, wherein the trenches having a floor composed of the non-conductive adhesive layer and side walls composed of the conductive plate;
c) coating the floor and the side walls of the trenches with a layer of electrode material to form electrodes;
d) sawing through the layer of electrode material on the floor of the trenches to form narrow trenches;
e) inserting separators into the narrow trenches, wherein the separators are attached to a frame comprising side walls;
f) sealing the sidewalls and the trench floor by flowing a framing adhesive around the separators; and
g) injecting electrolyte to fill gaps formed between the electrodes and the separators.
13. The process according claim 12 , further comprising:
h) placing the non-conductive adhesive layer on the insulating substrate board; and
i) attaching the conductive plate onto the non-conductive adhesive layer.
14. The process according claim 13 , further comprising:
j) injecting an adhesive to seal the topside;
k) exposing the contact pads;
l) attaching polar metal bars to the contact pads; and
m) assembling into casing.
15. The process according to claim 12 , wherein the non-conductive adhesive is a wax or a glue.
16. The process according to claim 12 , wherein the conductive plate comprises highly doped silicon.
17. The process according to claim 12 , wherein the layer of electrode material comprises a metal nano structure layer and a conductive metal oxide layer.