Integrated circuit (“IC”) assembly includes an IC die with a top metallization layer and a conductive epoxy layer applied to the top metallization layer
An integrated circuit (“IC”) assembly includes an IC die with a metallization layer on a top surface thereof. A plurality of lead wires are bonded at first end portions thereof to the metallization layer. A conductive layer is attached to the metallization layer and covers the first ends of the lead wires.
1. An integrated circuit (“IC”) assembly, comprising:
an IC die having a metallization layer positioned on a surface of the IC die;
lead wires, each having a first end and a second end, the first ends of the lead wires bonded to the metallization layer; and
a contiguous conductive layer applied to the metallization layer, the contiguous conductive layer covering the first ends of the lead wires.
2. The IC assembly of claim 1 , wherein the metallization layer has a thickness ranges from 1um to 3um.
3. The IC assembly of claim 1 , wherein the contiguous conductive layer includes a layer of compliant material.
4. The IC assembly of claim 1 , wherein the contiguous conductive layer includes a silver epoxy paste layer.
5. The IC assembly of claim 1 , wherein:
the IC die includes a top surface and a bottom surface opposing the top surface; and
the metallization layer is deposited on the top surface of the IC die.
6. The IC assembly of claim 1 , further comprising:
a leadframe having a die pad portion and a lead portion, wherein:
the second ends of lead wires are bonded to the lead portion; and
the IC die includes a top surface and a bottom surface opposing the top surface, the bottom surface of the IC die is mounted on the die portion.
7. The IC assembly of claim 6 , further comprising:
a mold layer covering the IC die, the lead wires, and a portion of the leadframe.
8. The IC assembly of claim 6 , wherein the leadframe includes a power bar portion on which the lead portion is mounted such that the second ends of the lead wires are electrically coupled to the power bar portion.
9. The IC assembly of claim 1 , wherein the first ends of the lead wires are ball bonded to the metallization layer.
10. The IC assembly of claim 1 , wherein the first ends of the lead wires are wedge bonded to the metallization layer.
11. An integrated circuit (“IC”) package, comprising:
a leadframe including a die pad portion and a lead portion;
an integrated circuit (“IC”) die having a top surface facing away from the leadframe and a bottom surface mounted on the die pad portion of the leadframe;
a metallization layer formed on the top surface of the IC die;
lead wires each including a first end and a second end, the first ends bonded to the metallization layer, and the second ends bonded to the lead portion of the leadframe; and
a conductive layer formed on the metallization layer to cover and join the first ends of the lead wires above the IC die.
12. The IC package of claim 11 , further comprising:
a mold layer covering the IC die, the lead wires, and a portion of the leadframe, the mold layer having flat lateral side surfaces and terminals flushing with the lateral side surfaces and coupled with at least one of the lead wires.
13. The IC package of claim 11 , wherein the metallization layer has a thickness ranges from 1um to 3um.
14. The IC package of claim 11 , wherein the conductive layer includes a compliant material.
15. The IC package of claim 11 , wherein the conductive layer includes a contiguous layer of silver epoxy paste.
16. The IC package of claim 11 , wherein the first ends of the lead wires are ball bonded to the metallization layer.
17. The IC package of claim 11 , wherein the first ends of the lead wires are wedge bonded to the metallization layer.