Assist feature for a photolithographic process
A photolithographic technique includes receiving a mask having a printing feature region, a sub-resolution assist feature (SRAF) region, and a third region. Each region has a different thickness of an absorptive layer disposed therein. The technique also includes exposing the mask to radiation, such that an intensity of radiation reflected by the SRAF region is substantially between an intensity of radiation reflected by the printing feature region and an intensity of radiation reflected by the third region. Using the radiation reflected by the printing feature region, the radiation reflected by the SRAF region, and the radiation reflected by the third region a workpiece is exposed.
1. A photolithographic technique, the technique comprising:
receiving a mask substrate having an absorptive layer and including a printing feature region and an assist feature region defined thereupon, wherein the absorptive layer has a first thickness in the printing feature region and a second, different, thickness in the assist feature region, and
exposing the mask to radiation, such that an intensity of radiation reflected by the assist feature region is substantially different from an intensity of radiation reflected by the printing feature region; and
using the radiation from the printing feature region and the radiation from assist feature region to expose a workpiece.
2. The photolithographic technique of claim 1 , wherein the printing feature region is substantially free of the absorptive layer.
3. The photolithographic technique of claim 1 , wherein the first thickness is greater than the second thickness.
4. The photolithographic technique of claim 1 , wherein the second thickness is configured such that radiation from the assist feature region does not exceed an exposure threshold of a photoresist of a target.
5. The photolithographic technique of claim 1 , further comprising maintaining the intensity of the radiation from the assist feature region is maintained not to exceed an exposure threshold of a photoresist of the workpiece.
6. The photolithographic technique of claim 1 , wherein the absorptive layer includes an upper absorptive layer and a lower absorptive layer.
7. The photolithographic technique of claim 6 , wherein the assist feature region includes a portion of the upper absorptive layer and a portion of the lower absorptive layer.
8. The photolithographic technique of claim 6 , wherein the assist feature region is substantially free of the upper absorptive layer.
9. A photolithographic technique, the technique comprising:
receiving a mask having a printing feature region, a sub-resolution assist feature (SRAF) region, and a third region that is neither a printing feature region nor an SRAF region, each region having a different thickness of an absorptive layer disposed therein;
exposing the mask to radiation, such that an intensity of radiation reflected by the SRAF region is substantially between an intensity of radiation reflected by the printing feature region and an intensity of radiation reflected by the third region; and
using the radiation reflected by the printing feature region, the radiation reflected by the SRAF region, and the radiation reflected by the third region to expose a workpiece.
10. The photolithographic technique of claim 9 , wherein the intensity of the radiation reflected by the SRAF region is maintained not to exceed an exposure threshold of a photoresist of the workpiece.
11. The photolithographic technique of claim 9 , wherein the thickness of the absorptive layer disposed in the printing feature region is less than the thickness of the absorptive layer disposed in the SRAF region.
12. The photolithographic technique of claim 11 , wherein the intensity of the radiation reflected by the SRAF region is less than the intensity of the radiation reflected by the printing feature region.
13. The photolithographic technique of claim 9 , wherein the thickness of the absorptive layer disposed in the printing feature region is greater than the thickness of the absorptive layer disposed in the SRAF region.
14. The photolithographic technique of claim 12 , wherein the intensity of the radiation reflected by the SRAF region is greater than the intensity of the radiation reflected by the printing feature region.
15. The photolithographic technique of claim 9 , wherein the exposing of the mask uses extreme-ultraviolet (EUV) radiation.
16. The photolithographic technique of claim 9 , wherein the received mask is configured to expose a negative photoresist of the workpiece.
17. A photolithographic technique, the technique comprising:
receiving a mask having a printing feature region and a second region, each region having a different thickness of an absorptive layer disposed therein;
exposing the mask to radiation, such that an intensity of radiation reflected by the printing feature region is substantially different from an intensity of radiation reflected by the second region; and
using the radiation reflected by the printing feature region and the radiation reflected by the second region to expose a workpiece.
18. The photolithographic technique of claim 17 , wherein the mask further includes an assistive feature region having a different thickness of the absorptive layer than either the printing feature region or the second region,
wherein the intensity of the radiation reflected by the assistive feature region is maintained not to exceed an exposure threshold of a photoresist of the workpiece.
19. The photolithographic technique of claim 18 , wherein the thickness of the absorptive layer disposed in the printing feature region is less than the thickness of the absorptive layer disposed in the assistive feature region.
20. The photolithographic technique of claim 18 , wherein the thickness of the absorptive layer disposed in the printing feature region is greater than the thickness of the absorptive layer disposed in the SRAF region.