Method for treating substrate that support catalyst particles for plating processing
The present invention provides a method for treating a substrate that supports metal fine particles for forming a plating layer on a circuit pattern or TSVs in various substrates, in which further micronization treatment is enabled compared with the conventional methods, and the formation of a stable plating layer is enabled. The present invention is a method for treating a substrate, the method including bringing a substrate into contact with a colloidal solution containing metal particles in order to support the metal particles that serve as a catalyst for forming a plating layer on the substrate, in which the colloidal solution contains metal particles formed of Pd and having a particle size of 0.6 nm to 4.0 nm and a face-to-face dimension of the (111) plane of 2.254 Å or more. When an organic layer such as SAM is formed on a surface of the substrate before this treatment, the binding force of the Pd particles can be increased.
1. A method for treating a substrate, the method including bringing a substrate into contact with a colloidal solution containing metal particles in order to support the metal particles that serve as a catalyst for forming a plating layer on the substrate,
wherein the colloidal solution contains metal particles formed of Pd and having a particle size of 0.6 nm to 4.0 nm and a face-to-face dimension of a plane 111 of 2.254 Å or more but 2.388 Å or less.
2. The method for treating a substrate according to claim 1 , wherein the method comprising a step of forming an organic layer formed from an organic substance, on a surface of the substrate before the contacting with the colloidal solution.
3. The method for treating a substrate according to claim 2 , wherein a self-assembled monolayer (SAM) is formed as the organic layer.
4. The method for treating a substrate according to claim 3 , wherein the step of forming a self-assembled monolayer is applying a silane coupling agent on the substrate.
5. The method for treating a substrate according to claim 2 , wherein a film comprising a polyimide, polyethylene terephthalate, or polyethylene naphthalate is formed as the organic layer.
6. The method for treating a substrate according to claim 1 , wherein the concentration of the metal particles in the colloidal solution is adjusted to 9.3×10 −6 to 3.8×10 −1 mol/L.
7. The method for treating a substrate according to claim 1 , wherein the substrate is a substrate having one or more via holes formed therein, and at least one aspect ratio of the via holes is 3 to 50.
8. The method for treating a substrate according to claim 2 , wherein the step of forming an organic layer is applying a silane coupling agent on the substrate.
9. The method for treating a substrate according to claim 3 , wherein a film comprising a polyimide, polyethylene terephthalate, or polyethylene naphthalate is formed as the organic layer.
10. The method for treating a substrate according to claim 4 , wherein a film comprising a polyimide, polyethylene terephthalate, or polyethylene naphthalate is formed as the organic layer.
11. The method for treating a substrate according to claim 2 , wherein the concentration of the metal particles in the colloidal solution is adjusted to 9.3×10 −6 to 3.8×10 −1 mol/L.
12. The method for treating a substrate according to claim 3 , wherein the concentration of the metal particles in the colloidal solution is adjusted to 9.3×10 −6 to 3.8×10 −1 mol/L.
13. The method for treating a substrate according to claim 4 , wherein the concentration of the metal particles in the colloidal solution is adjusted to 9.3×10 −6 to 3.8×10 −1 mol/L.
14. The method for treating a substrate according to claim 5 , wherein the concentration of the metal particles in the colloidal solution is adjusted to 9.3×10 −6 to 3.8×10 −1 mol/L.
15. The method for treating a substrate according to claim 2 , wherein the substrate is a substrate having one or more via holes formed therein, and at least one aspect ratio of the via holes is 3 to 50.
16. The method for treating a substrate according to claim 3 , wherein the substrate is a substrate having one or more via holes formed therein, and at least one aspect ratio of the via holes is 3 to 50.
17. The method for treating a substrate according to claim 4 , wherein the substrate is a substrate having one or more via holes formed therein, and at least one aspect ratio of the via holes is 3 to 50.
18. The method for treating a substrate according to claim 5 , wherein the substrate is a substrate having one or more via holes formed therein, and at least one aspect ratio of the via holes is 3 to 50.
19. The method for treating a substrate according to claim 6 , wherein the substrate is a substrate having one or more via holes formed therein, and at least one aspect ratio of the via holes is 3 to 50.