Semiconductor light emitting device

1. A semiconductor light emitting device, comprising:

a conductive supporting member having a top surface and a bottom surface spaced from each other in a vertical direction;

a second electrode layer disposed under the bottom surface of the conductive supporting member, the second electrode layer having a central portion and a peripheral portion;

a protecting layer under the peripheral portion of the second electrode layer;

an ohmic contact layer disposed under a bottom surface of the second electrode layer;

a light emitting structure disposed under a bottom surface of the ohmic contact layer wherein the light emitting structure comprises a first conductive type semiconductor layer disposed under the bottom surface of the ohmic contact layer, a second conductive type semiconductor layer between the first conductive type semiconductor layer and the ohmic contact layer, and an active layer between the first and second conductive type semiconductor layers;

a plurality of grooves disposed in an inner region of the light emitting structure, each groove having a width and an upper surface located between a top surface of the second conductive type semiconductor layer and a bottom surface of the second conductive type semiconductor layer; and

a first electrode disposed under a bottom surface of the light emitting structure,

wherein the ohmic contact layer is formed in a pattern corresponding to the grooves,

wherein a width and a length of the ohmic contact layer is greater than a width and a length of the grooves,

wherein each groove has a total depth from a bottom surface of the first conductive type semiconductor layer to the upper surface of the groove, and

wherein the total depth of the groove is shorter than that of the light emitting structure.

2. The semiconductor light emitting device according to claim 1 , wherein the protecting layer comprises at least one of an insulating material and a transparent material,

wherein the protecting layer comprises an inner portion between the second conductive type semiconductor layer and the second electrode layer and an outer portion extending outward beyond the top surface of the second conductive type semiconductor layer.

3. The semiconductor light emitting device according to claim 1 , wherein the ohmic contact layer is formed in plural bars, and

wherein the second conductive type semiconductor layer directly contact the ohmic contact layer and the second electrode layer.

4. The semiconductor light emitting device according to claim 1 , wherein the ohmic contact layer comprises at least one of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrOx, RuOx, RuOx/ITO, Ni/IrOx/Au, and Ni/IrOx/Au/ITO.

5. The semiconductor light emitting device according to claim 3 , wherein the first electrode has an open loop configuration and/or a close loop configuration and is connected to a different region of the bottom surface of the first conductive type semiconductor layer which is divided by the plurality of grooves.

6. A semiconductor light emitting device, comprising:

a conductive supporting member having a top surface and a bottom surface spaced from each other in a vertical direction;

a second electrode layer comprising a reflective electrode disposed under the bottom surface of the conductive supporting member, the second electrode layer having a central portion and a peripheral portion;

a protecting layer under the peripheral portion of the second electrode layer;

an ohmic contact layer disposed under a bottom surface of the second electrode layer;

a light emitting structure disposed under a bottom surface of the ohmic contact layer, wherein the light emitting structure comprises a first conductive type semiconductor layer disposed under the bottom surface of the ohmic contact layer, a second conductive type semiconductor layer between the first conductive type semiconductor layer and the ohmic contact layer, and an active layer between the first and second conductive type semiconductor layers;

a plurality of grooves spaced apart from each other in an inner region of the light emitting structure, each groove having a width and an upper surface located between a top surface of the second conductive type semiconductor layer and a bottom surface of the second conductive type semiconductor layer; and

a first electrode under a bottom surface of the light emitting structure,

wherein the ohmic contact layer is formed in a pattern corresponding to the grooves,

wherein a width and a length of the ohmic contact layer is greater than a width and a length of the grooves,

wherein the plurality of grooves each have a total depth from a bottom surface of the first conductive type semiconductor layer to the upper surface of the groove, the plurality of grooves being in the second conductive type semiconductor layer,

wherein the total depth of each of the grooves is shorter than that of the light emitting structure, and

wherein the conductive supporting member has a width wider than that of the light emitting structure.

7. The semiconductor light emitting device according to claim 6 , wherein the ohmic contact layer is formed in plural bars, and the plurality of grooves comprise insulating material or resin material therein.

8. The semiconductor light emitting device according to claim 6 , wherein the protecting layer comprises at least one of an insulating material and a transparent material,

wherein the protecting layer comprises an inner portion between the second conductive type semiconductor layer and the second electrode layer and an outer portion extending outward beyond the top surface of the second conductive type semiconductor layer.

9. The semiconductor light emitting device according to claim 6 , wherein the groove has the depth that the second conductive type semiconductor layer is exposed on the inner region of the light emitting structure, having at least one configuration of a straight line configuration, a bent configuration, a branched branch configuration, a multi-branch windows configuration, an open type characters configuration.

10. The semiconductor light emitting device according to claim 8 , wherein the protecting layer comprises at least one of SiOx, SiNx, Al 2 O 3 , TiO 2 , indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrOx, RuOx, RuOx/ITO, Ni/IrOx/Au, and Ni/IrOx/Au/ITO.

11. A semiconductor light emitting device, comprising:

a conductive supporting member having a top surface and a bottom surface spaced from each other in a vertical direction;

a second electrode layer comprising a reflective electrode disposed under a bottom surface of the conductive supporting member, the second electrode layer having a central portion and a peripheral portion;

a protecting layer under the peripheral portion of the second electrode layer;

an ohmic contact layer disposed in the central portion of the second electrode layer;

a light emitting structure disposed under a bottom surface of the ohmic contact layer, wherein the light emitting structure comprises a first conductive type semiconductor layer disposed under the bottom surface of the ohmic contact layer, a second conductive type semiconductor layer between the first conductive type semiconductor layer and the ohmic contact layer, and an active layer between the first and second conductive type semiconductor layers; and

a plurality of grooves spaced from each other in an inner region of the light emitting structure, each groove having a width and an upper surface located between a top surface of the second conductive type semiconductor layer and a bottom surface of the second conductive type semiconductor layer,

wherein the ohmic contact layer is formed in a pattern corresponding to the grooves,

wherein a width and a length of the ohmic contact layer is greater than a width and a length of the grooves,

wherein the plurality of grooves has a total depth from a bottom surface of the first conductive type semiconductor layer to the upper surface of the groove, and

wherein the total depth of each of the grooves is shorter than that of the light emitting structure,

wherein the conductive supporting member and the second electrode layer have a width wider than that of the light emitting structure, and

wherein the first conductive type semiconductor layer includes an n-type dopant and the second conductive type semiconductor layer includes a p-type dopant.

12. The semiconductor light emitting device according to claim 11 ,

wherein the protecting layer comprises at least one of an insulating material and a transparent material, and

wherein the protecting layer comprises an inner portion between the second conductive type semiconductor layer and the second electrode layer and an outer portion extending outward beyond the top surface of the second conductive type semiconductor layer.

13. The semiconductor light emitting device according to claim 11 , wherein the ohmic contact layer is formed in a plurality of bars that correspond to the plurality of grooves.

14. The semiconductor light emitting device according to claim 12 , wherein the ohmic contact layer and the protecting layer comprise at least one of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrOx, RuOx, RuOx/ITO, Ni/IrOx/Au, and Ni/IrOx/Au/ITO.

15. The semiconductor light emitting device according to claim 1 , wherein the first electrode comprises a plurality of portions facing each other on the bottom surface of the light emitting structure, and

wherein an interval between the plurality of portions is a wider than a width of the groove.

16. The semiconductor light emitting device according to claim 1 , wherein each groove is spaced apart from a plurality of side surfaces of the light emitting structure and the bottom surface of the light emitting structure.

17. The semiconductor light emitting device according to claim 3 , wherein each of the plural bars has a width wider than that of the groove.

18. The semiconductor light emitting device according to claim 1 , wherein the first conductive type semiconductor layer includes an n-type dopant and the second conductive type semiconductor layer includes a p-type dopant.