Glass substrate for flat panel display and method for manufacturing same
A substrate for p-Si TFT flat panel displays made of a glass having a high low-temperature-viscosity characteristic temperature and manufactured while avoiding erosion/wear of a melting tank during melting through direct electrical heating. The glass substrate comprises 52-78 mass % of SiO 2 , 3-25 mass % of Al 2 O 3 , 3-15 mass % of B 2 O 3 , 3-20 mass % of RO, wherein RO is total amount of MgO, CaO, SrO, and BaO, 0.01-0.8 mass % of R 2 O, wherein R 2 O is total amount of Li 2 O, Na 2 O, and K 2 O, and 0-0.3 mass % of Sb 2 O 3 , and substantially does not comprise As 2 O 3 , wherein the mass ratio CaO/RO is equal to or greater than 0.65, the mass ratio (SiO 2 +Al 2 O 3 )/B 2 O 3 is in a range of 7-30, and the mass ratio (SiO 2 +Al 2 O 3 )/RO is equal to or greater than 5. A related method involves melting glass raw materials blended to provide the glass composition; a forming step of forming the molten glass into a flat-plate glass; and an annealing step of annealing the flat-plate glass.
1. A glass substrate for a display,
the glass substrate being comprised of a glass comprising
52-78 mass % of SiO 2 ,
3-25 mass % of Al 2 O 3 ,
3-15 mass % of B 2 O 3 ,
3-20 mass % of RO, wherein RO is total amount of MgO, CaO, SrO, and BaO,
0.01-0.8 mass % of R 2 O, wherein R 2 O is total amount of Li 2 O, Na 2 O, and K 2 O, and
0-0.3 mass % of Sb 2 O 3 , and
substantially not comprising As 2 O 3 ,
the glass having a mass ratio (SiO 2 +Al 2 O 3 )/B 2 O 3 of 9.8-30, and
a mass ratio CaO/B 2 O 3 equal to or greater than 0.9,
wherein the heat shrinkage rate after performing a heat treatment in which the temperature is raised and lowered at a rate of 10° C./min and is kept at 550° C. for 2 hours is equal to or less than 75 ppm, the heat shrinkage rate being expressed by the following equation:
Heat shrinkage rate (ppm)={Amount of shrinkage of glass before and after heat treatment/Length of glass before heat treatment}×10 6 , and
wherein the glass exhibits a strain point equal to or greater than 695° C.
2. The glass substrate according to claim 1 , wherein the glass substrate is a glass substrate for oxide semiconductor thin-film-transistor TFT display.
3. The glass substrate according to claim 1 , wherein the glass substrate is a glass substrate for a liquid crystal display.
4. The glass substrate according to claim 1 , wherein the glass exhibits a Tg equal to or higher than 750° C.
5. A glass substrate for a display comprising SiO 2 , Al 2 O 3 , B 2 O 3 , RO and R 2 O,
the glass having a mass ratio (SiO 2 +Al 2 O 3 )/B 2 O 3 of 9.8-30, and a mass ratio CaO/B 2 O 3 equal to or greater than 0.9,
the glass substrate being comprised of a glass comprising
52-78 mass % of SiO 2 ,
3-25 mass % of Al 2 O 3 ,
3-20 mass % of RO, wherein RO is total amount of MgO, CaO, SrO, and BaO,
0.01-0.8 mass % of R 2 O, wherein R 2 O is total amount of Li 2 O, Na 2 O, and K 2 O, and
0-0.3 mass % of Sb 2 O 3 , and
the content of B 2 O 3 is in a range in which the glass exhibits a devitrification temperature equal to or lower than 1250° C. and equal to or lower than 11.3 mass %
substantially not comprising As 2 O 3 ,
wherein the heat shrinkage rate after performing a heat treatment in which the temperature is raised and lowered at a rate of 10° C./min and is kept at 550° C. for 2 hours is equal to or less than 75 ppm, the heat shrinkage rate being expressed by the following equation:
Heat shrinkage rate (ppm)={Amount of shrinkage of glass before and after heat treatment/Length of glass before heat treatment}×10 6 , and
wherein the glass exhibits a strain point equal to or greater than 695° C.
6. The glass substrate according to claim 5 , wherein the glass substrate is a glass substrate for oxide semiconductor thin-film-transistor TFT display.
7. The glass substrate according to claim 5 , wherein the glass substrate is a glass substrate for a liquid crystal display.
8. The glass substrate according to claim 5 , wherein the glass exhibits a Tg equal to or higher than 750° C.