Cleaning composition and method for semiconductor device fabrication
View Patent ↗Provided is a cleaning composition and its applications. The cleaning composition comprises a mixture of a halogen-containing compound and an organic solvent. In some embodiments, the halogen-containing compound is TetraButylAmmonium Fluoride (TBAF) and the organic solvent is either propylene glycol monomethylether acetate (PGMEA) or a mixture of PGMEA and propylene glycol monomethylether (PGME). The cleaning composition is effective in removing silicon-containing material off of a surface of an apparatus. In some embodiments, the apparatus comprises a pipeline for delivering the silicon-containing material in semiconductor spin-coating processes. In some embodiments, the apparatus comprises a drain for collecting waste fluid in semiconductor spin-coating processes. In some embodiments, the apparatus comprises a patterned substrate.
1. A method for removing a silicon-containing material layer over a surface of an apparatus comprising:
forming a chemical solution by mixing 0.01% to 20% by weight Tetrabutylammonium fluoride (TBAF) and greater than 50% by weight an organic solvent, wherein the organic solvent contains about 30% by weight Propylene glycol monomethylether acetate (PGMEA) and about 70% by weight Propylene glycol monomethylether (PGME); and
applying the chemical solution to the surface to remove the silicon-containing material layer.
2. The method of claim 1 , wherein the chemical solution contains 0.1% to about 2% by weight TBAF.
3. The method of claim 1 , wherein the chemical solution contains fluoride F − anions.
4. The method of claim 1 , wherein the silicon-containing material layer contains more than 10% by weight silicon.
5. The method of claim 1 , wherein the apparatus comprises a pipeline for delivering the silicon-containing material in semiconductor photolithography.
6. The method of claim 1 , wherein the apparatus comprises a drain for collecting waste fluid in semiconductor photolithography.
7. The method of claim 1 , wherein the apparatus comprises a silicon wafer.
8. A method for removing a silicon-containing material layer over a surface of an apparatus comprising:
forming a chemical solution having halide anions in a mixture containing about 30% by weight Propylene glycol monomethylether acetate (PGMEA) and about 70% by weight Propylene glycol monomethylether (PGME); and
applying the chemical solution to the surface to remove the silicon-containing material layer.
9. The method of claim 8 , wherein the forming of the chemical solution comprises mixing 0.01% to 20% by weight Tetrabutylammonium fluoride (TBAF) with the mixture.
10. The method of claim 8 , wherein the halide anions are fluoride F − .
11. The method of claim 8 , wherein the forming of the chemical solution comprises mixing about 0.01% to about 20% by weight Tetrabutylammonium fluoride (TBAF) with greater than 50% by weight the mixture.
12. A method for removing a silicon-containing material layer comprising:
forming a silicon-containing material layer over a substrate;
patterning a photoresist layer over the silicon-containing material layer;
transferring the pattern from the photoresist layer to the silicon-containing material layer;
etching the substrate using the patterned silicon-containing material layer as an etching mask; and
removing the patterned silicon-containing material layer, using a chemical solution having Tetrabutylammonium fluoride (TBAF) and a mixture of Propylene glycol monomethylether (PGME) and Propylene glycol monomethylether acetate (PGMEA), wherein the mixture includes a ratio between PGME and PGMEA of about 7:3.
13. The method of claim 12 , wherein the TBAF is about 0.01% to about 20% by weight of the chemical solution and the mixture is greater than 50% by weight of the chemical solution.
14. The method of claim 12 , wherein the TBAF is about 0.01% to about 70% by weight of the chemical solution.
15. The method of claim 8 , wherein the forming of the chemical solution comprises mixing about 0.1% to about 2% by weight of TBAF with greater than 50% by weight the mixture.
16. The method of claim 8 , wherein the forming of the chemical solution comprises mixing about 0.01% to about 70% by weight TBAF with the mixture.
17. The method of claim 8 , wherein the silicon-containing material layer contains more than 10% by weight silicon.
18. The method of claim 12 , wherein the TBAF is about 0.01% to about 2% by weight of the chemical solution and the mixture is greater than 50% by weight of the chemical solution.
19. The method of claim 12 , wherein the chemical solution contains fluoride F − anions.
20. The method of claim 12 , wherein the silicon-containing material layer contains more than 10% by weight silicon.