Method for producing one-time-programmable memory cells and corresponding integrated circuit

1. A method for forming a semiconductor device, the method comprising:

forming a dielectric layer over a semiconductor film of a silicon-on-insulator substrate;

forming a gate region dielectric layer so that the dielectric layer is disposed between the gate region and the semiconductor film;

forming an insulating lateral region along a sidewall of the gate region;

forming a first electrode region by partially silicide in the gate region; and

forming a second electrode region by silicide in a zone of the semiconductor film located alongside the insulating lateral region without having previously undertaken an epitaxy of semiconductor material on the zone of the semiconductor film, the silicide of the second electrode region extending at least partially under the gate region so that the first electrode region, the dielectric layer and the silicide of the second electrode region form a capacitor.

2. The method according to claim 1 , further comprising forming a MOS transistor at the semiconductor film laterally spaced from the gate region, the MOS transistor having elevated source and drain regions comprising an epitaxy of a semiconductor material on the semiconductor film.

3. The method according to claim 1 , wherein the silicon-on-insulator substrate comprises a fully depleted silicon-on-insulator (FDSOI) substrate.

4. The method according to claim 1 , wherein forming the second electrode region comprises forming an electrode region that underlies all of the gate region.

5. The method according to claim 2 , wherein forming the MOS transistor comprises performing an epitaxy step to form the elevated source and drain regions and forming an insulating layer to protect the zone of the semiconductor film during epitaxy step.

6. An integrated circuit comprising:

a silicon-on-insulator substrate that includes a semiconductor film located above a buried insulating layer;

a one-time-programmable memory cell comprising an MOS capacitor comprising:

a first electrode region that comprises a gate region that is partially silicided and flanked by an insulating lateral region;

a dielectric layer between the gate region and the semiconductor film; and

a second electrode region that includes a silicided zone of the semiconductor film, which is located alongside the insulating lateral region and extends at least partially under the dielectric layer and the gate region.

7. The integrated circuit according to claim 6 , wherein the silicided zone of the semiconductor film extends fully under the dielectric layer.

8. The integrated circuit according to claim 6 , further comprising a MOS transistor having elevated source and drain regions, the MOS transistor being laterally spaced from the one-time-programmable memory cell.

9. The integrated circuit according to claim 6 , wherein the one-time-programmable memory cell includes no elevated semiconductor regions.

10. The integrated circuit according to claim 6 , wherein the silicon-on-insulator substrate comprises a fully depleted silicon on insulator (FDSOI) substrate.

11. The integrated circuit according to claim 8 , further comprising a second MOS transistor having elevated source and drain regions, the second MOS transistor being laterally spaced from the one-time-programmable memory cell and the MOS transistor, wherein the MOS transistor and the second MOS transistor have opposite conductivity types.

12. An integrated circuit comprising:

a semiconductor layer;

an MOS transistor disposed at a surface of the semiconductor layer; and

an MOS capacitor disposed at the surface of the semiconductor layer laterally spaced from the MOS transistor;

the MOS transistor comprising:

a gate region;

a dielectric layer between the gate region and the semiconductor layer;

a channel region within the semiconductor layer beneath the dielectric layer;

a source region within the semiconductor layer adjacent a first edge of the gate region; and

a drain region within the semiconductor layer adjacent a second edge of the gate region, the drain region spaced from the source region by a channel region; and

the MOS capacitor comprising:

a first electrode region that comprises a gate region that is partially silicided;

a dielectric layer between the gate region and the semiconductor layer; and

a second electrode region that includes a silicided zone of the semiconductor layer that extends at least partially beneath the dielectric layer and the gate region.

13. The integrated circuit according to claim 12 , wherein the source region comprises an elevated source region that is partially silicided and wherein the drain region comprises an elevated drain region that is partially silicided.

14. The integrated circuit according to claim 12 , wherein the silicided zone of the semiconductor layer extends fully under the dielectric layer.

15. The integrated circuit according to claim 12 , wherein the semiconductor layer comprises a semiconductor film of a silicon-on-insulator substrate.

16. The integrated circuit according to claim 12 , wherein the MOS capacitor comprises a one-time-programmable memory cell.

17. The integrated circuit according to claim 13 , wherein the MOS capacitor comprises no elevated regions.

18. The integrated circuit according to claim 15 , wherein the silicon-on-insulator substrate comprises a fully depleted silicon on insulator (FDSOI) substrate.

19. A method of making a semiconductor device, the method comprising:

forming a gate region for a MOS transistor and a gate region for an MOS capacitor over and insulated from a semiconductor layer;

forming a mask over the gate region of the MOS capacitor;

forming an elevated source region and an elevated drain region adjacent opposite edges of the gate region of the MOS transistor; and

performing a silicide process to form a first silicide region over the gate region of the MOS transistor, a second silicide region over the elevated source region, a third silicide region over the elevated drain region, a fourth silicide region over the gate region of the MOS capacitor, a fifth silicide region in a first zone of the semiconductor layer adjacent a first edge of the gate region of the MOS capacitor, and a sixth silicide region and a second zone of the semiconductor layer adjacent a second edge of the gate region of the MOS capacitor, the fifth and sixth silicide regions both extending at least partially under the gate region of the MOS capacitor.

20. The method according to claim 19 , wherein the fifth silicide region adjoins the sixth silicide region under the gate region of the MOS capacitor.

21. The method according to claim 19 , wherein the semiconductor layer comprises semiconductor film of a fully depleted silicon on insulator (FDSOI) substrate.