Semiconductor package with an enhanced thermal pad

1. A semiconductor package, comprising:

a substrate;

a thermal pad having a heat conductive body extending through the substrate;

a semiconductor die disposed on the thermal pad and in thermal communication with the thermal pad thereby enabling the thermal pad to dissipate heat away from the semiconductor die; and

an interlock structure serving as an interface between the substrate and thermal pad so as to provide a mechanical interlock between the thermal pad and the substrate, wherein the thermal pad comprises an etch-able material, and an etch stop layer is disposed within the thermal pad.

2. The semiconductor package of claim 1 , wherein the interlock structure is substantially smaller than the heat conductive body of the thermal pad in size.

3. The semiconductor package of claim 1 , wherein:

the substrate comprises a plurality of metal layers electrically coupled to the semiconductor die; and

a plurality of vias interconnecting two of the plurality of metal layers, wherein the thermal pad is substantially larger than each of the plurality of vias in size.

4. The semiconductor package of claim 1 , wherein:

the thermal pad has a heat dissipating area taken along a cross-sectional plane substantially parallel to the substrate; and

the interlock structure has an interlock area taken along the cross-sectional plane, wherein the interlock area is substantially smaller than the heat dissipating area.

5. The semiconductor package of claim 1 , wherein the thermal pad comprises the interlock structure and a heat dissipating portion, wherein the heat dissipating portion is at least 10 times larger than the interlock structure.

6. The semiconductor package of claim 1 , wherein the interlock structure comprises a plurality of ridges and a plurality of grooves arranged in a corrugated manner that facilitate the mechanical interlock between the thermal pad and the substrate.

7. The semiconductor package of claim 6 , wherein each of the plurality of ridges and the plurality of grooves are substantially parallel to each other.

8. The semiconductor package of claim 6 , wherein the plurality of ridges and the plurality of grooves are arranged in an alternating configuration.

9. The semiconductor package of claim 6 , wherein:

the substrate comprises a plurality of metal layers; and

each of the plurality of ridges comprises a cantilever projecting outwardly from the thermal pad, wherein the cantilever is arranged corresponding to one layer of the plurality of the metal layers of the substrate.

10. The semiconductor package of claim 9 , wherein the cantilever extends and is connected to the one layer of the plurality of the metal layers.

11. The semiconductor package of claim 9 , wherein the substrate comprises a first external surface, and the plurality of ridges comprises a first surface cantilever engaging a portion of the first external surface.

12. The semiconductor package of claim 11 , wherein the substrate comprises a second external surface arranged opposing the first external surface, and the plurality of ridges comprises a second surface cantilever engaging a portion of the second external surface.

13. The semiconductor package of claim 6 , wherein each of the plurality of grooves comprises a roughened surface sandwiched between two neighboring ridges.

14. The semiconductor package of claim 13 , wherein the roughened surface comprises a burr connected to one of the two neighboring ridges.

15. A semiconductor package, comprising:

a circuit board including a first main surface and an opposing second main surface;

a thermal pad extending through the circuit board;

an interlock structure formed on a side surface intersecting the first main surface and the opposing second main surface of the thermal pad, wherein the interlock structure extends from the first main surface to the opposing second main surface of the circuit board so as to provide a mechanical interlock between the thermal pad and the circuit board; and

a semiconductor die disposed on the thermal pad.

16. The semiconductor package of claim 15 , wherein the interlock structure comprises a roughened surface that intersects the first main surface and the opposing second main surface.

17. The semiconductor package of claim 16 , wherein the roughened surface comprises a protuberance projecting from the roughened surface of the thermal pad to engage the circuit board.

18. The semiconductor package of claim 17 , wherein the roughened surface comprises an indentation surrounding the protuberance.

19. A wireless communication device, comprising:

a circuit board having a plurality of metal layers;

a thermal pad extending through the circuit board, wherein the thermal pad comprises a plurality of cantilever layers arranged in accordance with the plurality of metal layers, and a plurality of filled up metal layers formed between the plurality of cantilever layers; and

a semiconductor die disposed on the thermal pad, wherein the plurality of cantilever layers and the plurality of filled up metal layers form a corrugated structure so as to mechanically engage the thermal pad with the circuit board.

20. The wireless communication device of claim 19 , wherein:

each of the plurality of filled up metal layers comprises a side filled up surface extending between two adjacent cantilever layers;

each of the plurality of cantilever layers comprises a side cantilever surface extending between two adjacent filled up metal layers; and

the side cantilever surface and the side filled up surface are oriented in a zig-zag manner.

21. A semiconductor package, comprising:

a substrate;

a thermal pad having a heat conductive body extending through the substrate;

a semiconductor die disposed on the thermal pad and in thermal communication with the thermal pad thereby enabling the thermal pad to dissipate heat away from the semiconductor die, the substrate comprising a plurality of metal layers electrically coupled to the semiconductor die;

an interlock structure serving as an interface between the substrate and thermal pad so as to provide a mechanical interlock between the thermal pad and the substrate; and

a plurality of vias interconnecting two of the plurality of metal layers, wherein the thermal pad is substantially larger than each of the plurality of vias in size.

22. The semiconductor package of claim 21 , wherein the interlock structure is substantially smaller than the heat conductive body of the thermal pad in size.

23. The semiconductor package of claim 21 , wherein the thermal pad comprises an etch-able material, and the thermal pad comprises an etch stop layer formed within the thermal pad that comprises a non-etch-able material.

24. The semiconductor package of claim 21 , wherein:

the thermal pad has a heat dissipating area taken along a cross-sectional plane substantially parallel to the substrate; and

the interlock structure has an interlock area taken along the cross-sectional plane, wherein the interlock area is substantially smaller than the heat dissipating area.

25. The semiconductor package of claim 21 , wherein the thermal pad comprises the interlock structure and a heat dissipating portion, wherein the heat dissipating portion is at least 10 times larger than the interlock structure.

26. The semiconductor package of claim 21 , wherein the interlock structure comprises a plurality of ridges and a plurality of grooves arranged in a corrugated manner that facilitate the mechanical interlock between the thermal pad and the substrate.

27. The semiconductor package of claim 26 , wherein each of the plurality of ridges and the plurality of grooves are substantially parallel to each other.

28. The semiconductor package of claim 26 , wherein the plurality of ridges and the plurality of grooves are arranged in an alternating configuration.

29. The semiconductor package of claim 26 , wherein:

each of the plurality of ridges comprises a cantilever projecting outwardly from the thermal pad, wherein the cantilever is arranged corresponding to one layer of the plurality of the metal layers of the substrate.

30. The semiconductor package of claim 29 , wherein the cantilever extends and is connected to the one layer of the plurality of the metal layers.

31. The semiconductor package of claim 29 , wherein the substrate comprises a first external surface, and the plurality of ridges comprises a first surface cantilever engaging a portion of the first external surface.

32. The semiconductor package of claim 31 , wherein the substrate comprises a second external surface arranged opposing the first external surface, and the plurality of ridges comprises a second surface cantilever engaging a portion of the second external surface.

33. The semiconductor package of claim 32 , wherein each of the plurality of grooves comprises a roughened surface sandwiched between two neighboring ridges.

34. The semiconductor package of claim 33 , wherein the roughened surface comprises a burr connected to one of the two neighboring ridges.

35. A semiconductor package, comprising:

a substrate;

a thermal pad having a heat conductive body extending through the substrate, wherein the thermal pad has a heat dissipating area taken along a cross-sectional plane substantially parallel to the substrate;

a semiconductor die disposed on the thermal pad and in thermal communication with the thermal pad thereby enabling the thermal pad to dissipate heat away from the semiconductor die; and

an interlock structure serving as an interface between the substrate and thermal pad so as to provide a mechanical interlock between the thermal pad and the substrate, the interlock structure having an interlock area taken along the cross-sectional plane, wherein the interlock area is substantially smaller than the heat dissipating area.

36. The semiconductor package of claim 35 , wherein the interlock structure is substantially smaller than the heat conductive body of the thermal pad in size.

37. The semiconductor package of claim 35 , wherein:

the substrate comprises a plurality of metal layers electrically coupled to the semiconductor die; and

a plurality of vias interconnecting two of the plurality of metal layers, wherein the thermal pad is substantially larger than each of the plurality of vias in size.

38. The semiconductor package of claim 35 , wherein the thermal pad comprises the interlock structure and a heat dissipating portion, wherein the heat dissipating portion is at least 10 times larger than the interlock structure.

39. The semiconductor package of claim 35 wherein the interlock structure comprises a plurality of ridges and a plurality of grooves arranged in a corrugated manner that facilitate the mechanical interlock between the thermal pad and the substrate.

40. The semiconductor package of claim 39 , wherein each of the plurality of ridges and the plurality of grooves are substantially parallel to each other.

41. The semiconductor package of claim 39 , wherein the plurality of ridges and the plurality of grooves are arranged in an alternating configuration.

42. The semiconductor package of claim 41 , wherein:

the substrate comprises a plurality of metal layers; and

each of the plurality of ridges comprises a cantilever projecting outwardly from the thermal pad, wherein the cantilever is arranged corresponding to one layer of the plurality of the metal layers of the substrate.

43. The semiconductor package of claim 42 , wherein the cantilever extends and is connected to the one layer of the plurality of the metal layers.

44. The semiconductor package of claim 42 , wherein the substrate comprises a first external surface, and the plurality of ridges comprises a first surface cantilever engaging a portion of the first external surface.

45. The semiconductor package of claim 44 , wherein the substrate comprises a second external surface arranged opposing the first external surface, and the plurality of ridges comprises a second surface cantilever engaging a portion of the second external surface.

46. The semiconductor package of claim 39 , wherein each of the plurality of grooves comprises a roughened surface sandwiched between two neighboring ridges.

47. The semiconductor package of claim 46 , wherein the roughened surface comprises a burr connected to one of the two neighboring ridges.

48. A semiconductor package, comprising:

a substrate comprising a plurality of metal layers;

a thermal pad having a heat conductive body extending through the substrate;

a semiconductor die disposed on the thermal pad and in thermal communication with the thermal pad thereby enabling the thermal pad to dissipate heat away from the semiconductor die; and

an interlock structure comprising a plurality of ridges, and a plurality of grooves arranged in a corrugated manner that facilitate a mechanical interlock between the thermal pad and the substrate, the interlock structure serving as an interface between the substrate and thermal pad so as to provide the mechanical interlock between the thermal pad and the substrate, each of the plurality of ridges comprises a cantilever projecting outwardly from the thermal pad, wherein the cantilever is arranged corresponding to one layer of the plurality of the metal layers of the substrate.

49. The semiconductor package of claim 48 , wherein the interlock structure is substantially smaller than the heat conductive body of the thermal pad in size.

50. The semiconductor package of claim 49 , wherein the thermal pad comprises an etch-able material, and the thermal pad comprises an etch stop layer formed within the thermal pad that comprises a non-etch-able material.

51. The semiconductor package of claim 50 , wherein:

the substrate comprises a plurality of metal layers electrically coupled to the semiconductor die; and

a plurality of vias interconnecting two of the plurality of metal layers,

wherein the thermal pad is substantially larger than each of the plurality of vias in size.

52. The semiconductor package of claim 51 , wherein:

the thermal pad has a heat dissipating area taken along a cross-sectional plane substantially parallel to the substrate; and

the interlock structure has an interlock area taken along the cross-sectional plane, wherein the interlock area is substantially smaller than the heat dissipating area.

53. The semiconductor package of claim 48 , wherein the thermal pad comprises the interlock structure and a heat dissipating portion, wherein the heat dissipating portion is at least 10 times larger than the interlock structure.

54. The semiconductor package of claim 53 , wherein each of the plurality of ridges and the plurality of grooves are substantially parallel to each other.

55. The semiconductor package of claim 50 , wherein the cantilever extends and is connected to the one layer of the plurality of the metal layers.

56. The semiconductor package of claim 50 , wherein the substrate comprises a first external surface, and the plurality of ridges comprises a first surface cantilever engaging a portion of the first external surface.

57. The semiconductor package of claim 56 , wherein the substrate comprises a second external surface arranged opposing the first external surface, and the plurality of ridges comprises a second surface cantilever engaging a portion of the second external surface.

58. The semiconductor package of claim 50 , wherein each of the plurality of grooves comprises a roughened surface sandwiched between two neighboring ridges.

59. The semiconductor package of claim 58 , wherein the roughened surface comprises a burr connected to one of the two neighboring ridges.