Manufacturing method of semiconductor device
A drain of a first transistor is formed by performing ion implantation on a semiconductor substrate using a first member as a mask for a gate electrode of the first transistor. Further, ion implantation is performed on the gate electrode of the second transistor after thinning a second member.
1. A photoelectric conversion device comprising:
a photoelectric conversion unit for outputting a electric signal base on a signal charge generated in a photoelectric conversion element, the photoelectric conversion unit including a first transistor; and
a signal processing unit for processing the electric signal, the signal processing unit including a second transistor and a third transistor,
wherein a gate insulation film of the second transistor is thinner than a gate insulation film of the first transistor,
wherein the first transistor and the second transistor are first conductive type transistors, and the third transistor is a second conductive type transistor,
wherein the signal processing unit has an electrode integrally including a first conductive type portion as a gate electrode of the second transistor and a second conductive type portion as a gate electrode of the third transistor, and
an impurity concentration in the first conductive type portion is higher than an impurity concentration in a gate electrode of the first transistor.
2. The photoelectric conversion device according to claim 1 , wherein the photoelectric conversion unit includes the photoelectric conversion element, a signal generation unit, and a transfer gate for transfer the signal charge from the photoelectric conversion element to the signal generation unit.
3. The photoelectric conversion device according to claim 2 , wherein the first transistor has the transfer gate.
4. The photoelectric conversion device according to claim 2 , wherein the signal generation unit has a capacitor, and the first transistor is an amplifying transistor having a gate connected to the capacitor.
5. The photoelectric conversion device according to claim 2 , wherein the signal generation unit has a capacitor and the first transistor is a reset transistor having a source connected to the capacitor.
6. The photoelectric conversion device according to claim 1 , wherein a drain of the second transistor is covered with a silicide layer which contains cobalt or nickel.
7. The photoelectric conversion device according to claim 6 , wherein a silicide layer which contains cobalt or nickel is not formed above the gate electrode of the first transistor.
8. The photoelectric conversion device according to claim 1 ,
wherein the first conductive type portion and the second conductive type portion form the p-n junction, and
wherein the first conductive type portion and the second conductive type portion are covered by a silicide layer.
9. The photoelectric conversion device according to claim 1 , wherein the first conductive type portion and the second conductive type portion form the p-n junction.
10. The photoelectric conversion device according to claim 1 , wherein the first conductive type portion and the second conductive type portion are covered by a silicide layer.
11. The photoelectric conversion device according to claim 1 , further comprising:
a film arranged to cover the gate electrode of the first transistor; and
a member arranged between the film and the gate electrode of the first transistor, the member being formed of insulating material,
wherein the member contacts with a top surface of the gate electrode of the first transistor,
wherein the member does not contact a side surface of the gate electrode of the first transistor, and
wherein the film covers the side surface of the gate electrode of the first transistor.
12. The photoelectric conversion device according to claim 1 , wherein the impurity concentration of the first conductive type portion is greater than or equal to 3/2 times the impurity concentration in the gate electrode of the first transistor.
13. The photoelectric conversion device according to claim 1 , wherein a sheet resistance of the first conductive type portion is smaller than or equal to ⅔ of a sheet resistance of the gate electrode of the first transistor.
14. The photoelectric conversion device according to claim 1 , wherein the impurity concentration in the gate electrode of the first transistor and the impurity concentration of the first conductive type portion are from 1×10 21 atoms/cm 3 to 1×10 22 atoms/cm 3 .
15. The photoelectric conversion device according to claim 1 , wherein a drain of the second transistor has a lightly doped drain (LDD) structure.
16. The photoelectric conversion device according to claim 1 , wherein the photoelectric conversion element and the first transistor are arranged on a same active region which is surrounded by an isolation region having a shallow trench isolation (STI) structure or a local oxidation silicon (LOCOS) structure.
17. The photoelectric conversion device according to claim 1 , further comprising an isolation region having a shallow trench isolation (STI) structure,
wherein the isolation region is disposed between the photoelectric conversion element and a transistor of the photoelectric conversion unit.
18. The photoelectric conversion device according to claim 1 , further comprising an optical waveguide structure formed above the photoelectric conversion element.
19. An imaging system comprising:
a photoelectric conversion unit for outputting a electric signal base on a signal charge generated in a photoelectric conversion element, the photoelectric conversion unit including a first transistor; and
a signal processing unit for processing the electric signal, the signal processing unit including a second transistor and a third transistor
an image processing engine which processes an image based on the electric signal; and
an image display unit which displays the image,
wherein a gate insulation film of the second transistor is thinner than a gate insulation film of the first transistor,
wherein the first transistor and the second transistor are first conductive type transistors, and the third transistor is a second conductive type transistor,
wherein the signal processing unit has an electrode integrally including a first conductive type portion as a gate electrode of the second transistor and a second conductive type portion as a gate electrode of the third transistor, and
wherein an impurity concentration in the first conductive type portion is higher than an impurity concentration in a gate electrode of the first transistor.
20. The imaging system device according to claim 19 ,
wherein the first conductive type portion and the second conductive type portion form the p-n junction, and
the first conductive type portion and the second conductive type portion are covered by a silicide layer.