Resonant optical device with a microheater
A resonant photonic device is provided. The device comprises an optical waveguiding element, such as an optical resonator, that includes a diode junction region, two signal terminals configured to apply a bias voltage across the junction region, and a heater laterally separated from the optical waveguiding element. A semiconductor electrical barrier element is juxtaposed to the heater. A metallic strip is electrically and thermally connected at one end to a signal terminal of the optical waveguiding element and thermally connected at another end to the barrier element.
1. A photonic device, comprising:
an optical waveguiding element comprising a diode junction region and two signal terminals configured to apply a bias voltage across the junction region;
at least one heater laterally separated from the optical waveguiding element;
an electrically discontinuous, thermally conductive path between the heater and the optical waveguiding element; and
a dielectric layer that overlies the optical waveguiding element and the heater, wherein
the thermally conductive path comprises a metallic film that overlies the dielectric layer and is thermally connected to the optical waveguiding element and to the heater by vertical metal connective elements.
2. The photonic device of claim 1 , wherein:
the thermally conductive path includes a semiconductor electrical barrier element juxtaposed to the heater; and
the metallic film is electrically and thermally connected at one end to a waveguiding element terminal and thermally connected at another end to the barrier element.
3. The photonic device of claim 2 , wherein:
the optical waveguiding element is an optical resonator; and
the metallic film is electrically and thermally connected at one end to a resonator terminal and thermally connected at another end to the barrier element.
4. The photonic device of claim 3 , wherein the optical resonator and the heater are defined in silicon on a silicon or SOI substrate.
5. The photonic device of claim 2 , wherein the heater has two electrical terminals that are both distinct from the signal terminals.
6. The photonic device of claim 2 , wherein the electrical barrier element comprises substantially undoped semiconductor.
7. The photonic device of claim 2 , wherein the photonic device is an optical modulator.
8. The photonic device of claim 2 , wherein the photonic device is an optical filter.
9. The photonic device of claim 2 , wherein the photonic device is an optical switch.
10. The photonic device of claim 2 , wherein the photonic device is a silicon-germanium (SiGe) multiple quantum well (MQW) modulator.
11. The photonic device of claim 2 , wherein:
the device comprises two heaters laterally separated from the waveguiding element;
one of said heaters is associated with a p-type side of the diode junction region; and
one of said heaters is associated with an n-type side of the diode junction region.
12. The photonic device of claim 1 , wherein the optical waveguiding element is an optical resonator.
13. The photonic device of claim 1 , wherein the optical waveguiding element is a silicon-germanium (SiGe) multiple quantum well (MQW) modulator.