Display device, method of fabricating the same, and method of fabricating image sensor device
Provided are a display device, a method of fabricating the display device, and a method of fabricating an image sensor device. The method of fabricating the display device includes preparing a substrate including a cell array area and a peripheral circuit area, forming a silicon layer on the peripheral circuit area of the substrate, forming oxide layers on the cell array area and the peripheral circuit area of the substrate, forming gate dielectric layers on the silicon layer and the oxide layers, forming the gate electrodes on the gate dielectric layers, wherein the gate electrodes expose both ends of the silicon layer and both ends of the oxide layers, and injecting dopant into both ends of the silicon layer and both ends of the oxide layers at the same time.
1. A display device comprising:
a substrate comprising a cell array area and a peripheral area;
an n-type transistor disposed on the cell array area of the substrate, wherein the n-type transistor comprises a cell oxide layer including source/drain parts and a channel part; and
a CMOS transistor disposed on the peripheral area of the substrate,
wherein the CMOS transistor comprises:
an NMOS transistor comprising a circuit oxide layer, a first circuit gate dielectric layer disposed on the circuit oxide layer, and a first circuit gate electrode disposed on the first circuit gate dielectric layer; and
a PMOS transistor comprising a silicon layer, a second circuit gate dielectric layer disposed on the silicon layer, and a second circuit gate electrode disposed on the second circuit gate dielectric layer,
wherein:
the cell oxide layer of the n-type transistor comprises metal oxide;
the circuit oxide layer of the NMOS transistor comprises metal oxide;
the silicon layer of the PMOS transistor comprises silicon;
the circuit oxide layer of the NMOS transistor comprises an n-type dopant, and the silicon layer of the PMOS transistor comprises a p-type dopant; and
the n-type dopant of the NMOS transistor is same as the p-type dopant of the PMOS transistor.
2. The display device of claim 1 , further comprising:
an interdielectric layer disposed on the substrate to cover the silicon layer, the circuit oxide layer, the cell oxide layer, and the gate electrode; and
conductive lines disposed on the interdielectric layer to respectively contact both ends of the circuit oxide layer, both ends of the silicon layer, the first circuit gate electrode, and the second circuit gate electrode.
3. The display device of claim 1 , wherein:
the cell array area is a pixel area in which a plurality of pixels are arranged in a matrix form; and
the CMOS transistor is disposed on the peripheral area of the substrate outside the pixel area.
4. The display device of claim 1 , wherein both of the n-type dopant of the NMOS transistor and the p-type dopant of the PMOS transistor comprise boron (B).
5. A display device comprising:
a substrate comprising a cell array area and a peripheral area;
an n-type transistor disposed on the cell array area of the substrate; and
a CMOS transistor disposed on the peripheral area of the substrate,
wherein the CMOS transistor comprises:
an NMOS transistor comprising a circuit oxide layer, a first circuit gate dielectric layer disposed on the circuit oxide layer, and a first circuit gate electrode disposed on the first circuit gate dielectric layer; and
a PMOS transistor comprising a silicon layer, a second circuit gate dielectric layer disposed on the silicon layer, and a second circuit gate electrode disposed on the second circuit gate dielectric layer,
wherein:
the circuit oxide layer comprises source/drain areas and a channel area;
the silicon layer comprises source/drain electrodes and an active area;
the source/drain areas of the circuit oxide layer of the NMOS transistor comprise an n-type dopant, and the source/drain electrodes of the silicon layer of the PMOS transistor comprise a p-type dopant; and
the n-type dopant of the NMOS transistor is same as the p-type dopant of the PMOS transistor.
6. The display device of claim 5 , wherein the n-type transistor comprises a cell oxide layer comprising source/drain parts and a channel part, a cell gate dielectric layer disposed on the cell oxide layer, and a cell gate electrode disposed on the cell gate dielectric layer, and
the cell oxide layer comprises the same material as the circuit oxide layer.
7. The display device of claim 6 , wherein the cell oxide layer comprises a metal oxide including at least one of Zn, In, Sn, and Ga.
8. The display device of claim 6 , wherein the cell gate dielectric layer comprises the same material as the first circuit gate dielectric layer and the second circuit gate dielectric layer, and
the cell gate electrode comprises the same material as the first circuit gate electrode and the second circuit gate electrode.
9. The display device of claim 5 , wherein both of the n-type dopant and the p-type dopant comprise boron (B).
10. The display device of claim 5 , wherein:
the cell array area is a pixel area in which a plurality of pixels are arranged in a matrix form; and
the CMOS transistor is disposed on the peripheral area of the substrate outside the pixel area.
11. The display device of claim 5 , wherein the circuit oxide layer comprises metal oxide.
12. The display device of claim 5 , wherein the NMOS transistor is laterally disposed with the PMOS transistor in a plan view.