Sensor element
A sensor element ( 1 ) includes a substrate ( 2 ) and a strain-sensitive element ( 3 ) which is preferably applied to the substrate by means of thin-film technology and is used for measuring the deformation of the substrate ( 2 ) when pressure is applied or a force is introduced, the strain-sensitive element ( 3 ) including XAlO y N 1-y , wherein X is a metal with a high melting temperature in the range of greater than 1400° C. and 0<y<0.4 applies. A passivation layer ( 5 ) can be applied to the strain-sensitive element ( 3 ).
1. A sensor element comprising a substrate and a strain-sensitive element which is applied to the substrate, said strain-sensitive element measuring deformation of the substrate when pressure is applied or a force is introduced, where the strain-sensitive element consists of XAlO y N 1-y , and wherein X is a metal with a high melting temperature in the range of greater than 1400° C. and 0<y<0.4 applies.
2. The sensor element according to claim 1 , wherein the strain-sensitive element consists of a composite layer which is applied to the substrate by a PVD process, or by a CVD process.
3. The sensor element according to claim 1 , wherein the strain-sensitive element contains at least one metal X from a group consisting of Ti, Ta and Pt.
4. The sensor element according to claim 1 , wherein a fraction of aluminium in the strain-sensitive element, which enters into a dielectric connection with nitrogen and oxygen, to a fraction of the metallic component is weighted in such a way that TCR of the strain-sensitive element assumes minimum values.
5. The sensor element according to claim 4 , wherein the titanium fraction in a strain-sensitive element made of TiAlON is between 0.4 and 0.5 percent by weight.
6. The sensor element according to claim 1 , wherein the strain-sensitive element is arranged in an enclosed sensor atmosphere with a defined oxygen fraction.
7. The sensor element according to claim 6 , wherein the strain-sensitive element is arranged in a sealed sensor housing.
8. The sensor element according to claim 1 , wherein the substrate consists of Ni base material selected from the group of Haynes 230, a ceramic and a piezoelectric material.
9. The sensor element according to claim 1 , wherein the strain-sensitive element comprises a passivation layer.
10. The sensor element according to claim 9 , wherein the passivation layer comprises of Al 2 0 3 or AlN.
11. The sensor element according to claim 2 , wherein the composite layer is applied to the substrate by a sputtering process or a vapour-deposition process.
12. The sensor element according to claim 4 , wherein TCR of the strain-sensitive element assumes approximately 0.
13. The sensor element according to claim 7 , wherein the sensor housing consists at least partly of Ni base material.