Power semiconductor device

Inventors: Tatsuya Fukase (Tokyo, JP); Dai Nakajima (Tokyo, JP); Masahiko Fujita (Tokyo, JP); Masaki Kato (Tokyo, JP)

Assignee: Mitsubishi Electric Corporation

H01L23/49589 H01L23/3107 H01L23/492 H01L23/4952 H01L23/49531 H01L23/49537 H01L23/49562 H01L23/49575 H01L23/562 H05K1/186 H05K3/103 H01L24/48 H01L24/49 H01L2224/05624 H01L2224/45124 H01L2224/45147 H01L2224/48091 H01L2224/48247 H01L2224/48472 H01L2224/49111 H01L2224/85399 H01L2924/00014 H01L2924/1033 H01L2924/10254 H01L2924/10272 H01L2924/1305 H01L2924/13055 H01L2924/13091 H01L2924/19041 H01L2924/19105 H01L2924/19107 H01L2924/30107 H05K3/202 H05K2201/09118 H05K2201/10015 H05K2201/10166 H05K2201/10636 H05K2201/10962 Y02P70/611

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Quick Facts

Patent No.: US 9,620,444
App. No.: 14/402,538
Granted: Apr 11, 2017
Kind: B2

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Abstract

According to a power semiconductor device of the present invention, it comprises a plurality of lead frames formed into like a wiring pattern, a power semiconductor element joined onto the lead frame, and a capacitor placed between mutually adjacent two lead frames, and is encapsulated with a mold resin. The capacitor is characterized in that external electrodes of that capacitor are connected to the lead frames each through a stress-relaxation structure portion that is lower in rigidity than the capacitor.

Claims (30)

1. A power semiconductor device encapsulated with a mold resin, comprising:

a plurality of lead frames formed into like a wiring pattern;

a power semiconductor element joined onto the lead frame; and

a capacitor placed between mutually adjacent two of the lead frames;

wherein the capacitor is characterized in that external electrodes of the capacitor are connected to the lead frames each through a stress-relaxation structure portion that is lower in rigidity than the capacitor;

wherein joining structure of the capacitor and each of the lead frames comprises the stress-relaxation structure portion connected to the external electrode of the capacitor, and a solder that connects the stress-relaxation structure portion with the lead frame; and wherein the stress-relaxation structure portion is lower in rigidity than the solder;

wherein the stress-relaxation structure portion has an electrode connection portion connected to the external electrode of the capacitor, and an electrode non-connection portion is not connected to the external electrode and the capacitor.

2. The power semiconductor device of claim 1 , wherein the stress-relaxation structure portion includes an electro-conductive stress-relaxation portion formed of a resin in which an electro-conductive filler is mixed.

3. The power semiconductor device of claim 2 , wherein the capacitor has a non-connected portion to which the stress-relaxation structure portion is not connected, on the external electrode of the capacitor in the side opposite to the lead frame, and the non-connected portion is covered with the mold resin.

4. The power semiconductor device of claim 3 , which is disposed on a rotating electrical machine for in-vehicle use to thereby supply a current to an armature of the rotating electrical machine.

5. The power semiconductor device of claim 4 , wherein the power semiconductor element is formed of a wide bandgap semiconductor material,