Silicon-on-nothing transistor semiconductor structure with channel epitaxial silicon region
An improved transistor with channel epitaxial silicon. In one aspect, a method of fabrication includes: forming a gate stack structure on an epitaxial silicon region disposed on a substrate, a width dimension of the epitaxial silicon region approximating a width dimension of the gate stack structure; and growing a raised epitaxial source and drain from the substrate, the raised epitaxial source and drain in contact with the epitaxial silicon region and the gate stack structure. For a SRAM device, further: removing an epitaxial layer in contact with the silicon substrate and the raised source and drain and to which the epitaxial silicon region is coupled leaving a space above the silicon substrate and under the raised epitaxial source and drain; and filling the space with an insulating layer and isolating the raised epitaxial source and drain and a channel of the transistor from the silicon substrate.
1. A transistor comprising:
a silicon substrate;
trenches formed in the silicon substrate;
an isolation layer formed on the silicon substrate between a first one of the trenches and a second one of the trenches;
an epitaxial silicon region formed on a first portion of the isolation layer, the epitaxial silicon region being isolated from the substrate by the isolation layer;
a raised source and drain in contact with second and third portions of the isolation layer and in contact with the epitaxial silicon region, the first portion of the isolation layer on which the epitaxial silicon region is formed being between the second and third portions of the isolation layer, the raised source and drain being isolated from the substrate by the isolation layer; and
a gate stack structure in contact with the epitaxial silicon region and in contact with the raised source and drain.
2. The transistor of claim 1 , wherein first portions of the raised source and drain are in contact with and contiguous with the epitaxial silicon region and second portions of the raised source and drain are in contact with sidewalls of the gate stack structure, the first portions being positioned below the gate stack structure.
3. The transistor of claim 2 , wherein the first portions of the raised source and drain in contact with the epitaxial silicon region have a thickness that approximates that of the epitaxial silicon region.
4. The transistor of claim 1 , wherein the transistor is a PMOS SRAM and the transistor further comprises:
an epitaxial silicon layer interposed between the epitaxial silicon region and the isolation layer, the epitaxial silicon layer in contact with the raised source and drain.
5. The transistor of claim 4 , wherein the epitaxial silicon region of the PMOS SRAM device is silicon germanium (SiGe).
6. The transistor of claim 1 , wherein the transistor is a PMOS device and the epitaxial silicon region is SiGe.
7. The transistor of claim 6 , wherein the transistor is a NMOS device and the epitaxial silicon region is silicon (Si).
8. The transistor of claim 1 , wherein the transistor is a NMOS SRAM device and the epitaxial silicon region is in contact with the upper surface of the insulating layer.
9. The transistor of claim 8 , wherein the epitaxial silicon region of the NMOS SRAM device is Si.
10. A device, comprising:
a silicon substrate;
trenches formed in the substrate;
a transistor including:
an isolation layer formed on the silicon substrate and extending between the trenches;
a raised source and drain in contact the isolation layer, the raised source and drain being isolated from the silicon substrate by the isolation layer;
an epitaxial silicon region formed on the isolation layer between the raised source and drain; and
a gate stack structure in contact with the epitaxial silicon region and in contact with the raised source and drain.
11. The device of claim 10 , wherein the raised source and drain are in contact with sidewalls of the gate stack structure.
12. The device of claim 10 , wherein the transistor is a PMOS transistor further comprising:
an epitaxial silicon layer positioned between the epitaxial silicon region and the isolation layer, the epitaxial silicon layer in contact with the raised source and drain.
13. The device of claim 10 , wherein the isolation layer includes:
a first layer of SiO 2 formed on the substrate;
a first layer of SiN formed on the first layer of SiO 2 ; and
a second layer of SiO 2 formed on the first layer of SiN.
14. The device of claim 10 , wherein the transistor is a NMOS transistor.
15. The device of claim 14 , wherein the isolation layer includes:
a first layer of SiO 2 formed on the substrate;
a first layer of SiN formed on the first layer of SiO 2 ; and
a second layer of SiO 2 formed on the first layer of SiN.