Temperature controlled chamber liner
A liner for a semiconductor processing chamber and a semiconductor processing chamber are provided. In one embodiment, a liner for a semiconductor processing chamber includes a body having an outwardly extending flange. A plurality of protrusions extend from a bottom surface of the flange. The protrusions have a bottom surface defining a contact area that is asymmetrically distributed around the bottom surface of the flange.
1. A liner for a semiconductor processing chamber, comprising:
a body having an outside diameter wall;
a flange having a bottom surface, the bottom surface extending outward from the outside diameter wall of the body;
a plurality of protrusions extending from the bottom surface of the flange, the protrusions having a bottom surface defining a contact area, the contact area of the protrusions having an asymmetrical distribution around the bottom surface of the flange.
2. The liner of claim 1 , wherein a size of the contact areas for the protrusions is non-uniform.
3. The liner of claim 2 , wherein the bottom surface of the protrusions in a first region of the flange have a first profile and the bottom surface of the protrusions in a second region of the flange have a second profile that is flatter than the first profile.
4. The liner of claim 3 , wherein the first region of the flange is defined above a substrate passage slot formed through the body.
5. The liner of claim 3 , wherein the second region of the flange is defined above a substrate passage slot formed through the body.
6. The liner of claim 2 , wherein the bottom surface of the protrusions in a first region of the flange have a first contact area and the bottom surface of the protrusions in a second region of the flange have a second contact area that is different than the first contact area.
7. The liner of claim 6 , wherein the first region of the flange is defined above a substrate passage slot formed through the body.
8. The liner of claim 6 , wherein the second region of the flange is defined above a substrate passage slot formed through the body.
9. The liner of claim 1 , wherein the protrusions are non-uniformly distributed around the bottom surface of the flange.
10. The liner of claim 9 , wherein a density of protrusions is greater in a first region of the flange defined above a substrate passage slot formed through the body relative to a second region of the flange defined opposite the substrate passage slot.
11. The liner of claim 9 , wherein a density of protrusions is less in a first region of the flange defined above a substrate passage slot formed through the body relative to a second region of the flange defined opposite the substrate passage slot.
12. The liner of claim 1 further comprising: a plurality of slots formed through the body, wherein one of the slots is a substrate passage slot.
13. The liner of claim 12 , wherein the plurality of slot are arranged in a polar array.
14. The liner of claim 1 further comprising: a resistive heater disposed in the body radially inward of the flange.
15. A liner for a semiconductor processing chamber, comprising:
a tubular body having an inner cylindrical wall and an outer cylindrical wall, the body having an open top and an open bottom;
a substrate passage slot formed through the body;
a flange having a bottom surface, the bottom surface extending outward from the outer cylindrical wall of the body, the flange spaced from both the top and the bottom of the body;
a plurality of protrusions extending from the bottom surface of the flange, the protrusions having a bottom surface defining a contact area, the contact area of the protrusions having an asymmetrical distribution around the bottom surface of the flange, the distribution of the contact area being symmetrical relative to the substrate passage slot; and
a resistive heater disposed in the body or flange radially inward of the protrusions.
16. The liner of claim 15 , wherein the bottom surface of the protrusions are non-uniform.
17. The liner of claim 15 , wherein the bottom surface of the protrusions in a first region of the flange have a first contact area and the bottom surface of the protrusions in a second region of the flange have a second contact area that is different than the first contact area.
18. The liner of claim 15 , wherein the protrusions are non-uniformly distributed around the bottom surface of the flange.
19. The liner of claim 15 further comprising:
a plurality of uniform slots formed through the body in a polar array, wherein one of the slots is the substrate passage slot.
20. A semiconductor processing chamber, comprising:
a chamber body having a ledge exposed to a processing volume, the chamber body having a slit valve tunnel formed therethrough; and
a liner disposed in the processing volume, the liner comprising:
a liner body having an outside diameter wall and a substrate passage slot aligned with the slit valve tunnel of the chamber body;
a flange having a bottom surface, the bottom surface extending outward from the outside diameter wall of the liner body;
a plurality of protrusions extending from the bottom surface of the flange and maintaining the flange and liner body spaced-apart from the chamber body, the protrusions having a bottom surface defining a contact area with the ledge of the chamber body, the contact area of the protrusions having an asymmetrical distribution around the bottom surface of the flange.