Magnetic memory, magnetic memory device, and operation method of magnetic memory
A magnetic memory includes a magnetic thin line including a plurality of magnetic domains, a reference layer having a magnetization, a nonmagnetic layer, a first fixed magnetization part having a magnetization, a second fixed magnetization part having a magnetization, a first electrode, a second electrode, and a third electrode.
1. A magnetic memory, comprising:
a magnetic thin line including a plurality of magnetic domains;
a reference layer having a magnetization and surrounding one end of the magnetic thin line;
a nonmagnetic layer provided between the reference layer and the magnetic thin line;
a first fixed magnetization part having a magnetization and a second fixed magnetization part having a magnetization, provided at both ends of the reference layer, wherein the magnetization of the first fixed magnetization part is opposite to the magnetization of the second fixed magnetization part;
a first electrode provided at the first fixed magnetization part,
a second electrode provided at the second fixed magnetization part; and
a third electrode provided at an other end of the magnetic thin line.
2. The magnetic memory of claim 1 , further comprising:
an antiferromagnetic layer provided between the first fixed magnetization part and the first electrode.
3. The magnetic memory of claim 1 , wherein at least one of the magnetization of the magnetic thin line, the magnetization of the first fixed magnetization part, and the magnetization of the second magnetization part has a magnetization easy axis in a direction intersecting a direction of connecting the first electrode and the second electrode.
4. The magnetic memory of claim 2 , wherein at least one of the magnetization of the magnetic thin line, the magnetization of the first fixed magnetization part, and the magnetization of the second magnetization part has a magnetization easy axis in a direction intersecting a direction of connecting the first electrode and the second electrode.
5. The magnetic memory of claim 1 , wherein the nonmagnetic layer comprises at least one material selected from a group of copper, silver, gold, aluminum, and platinum, a combination alloy related to these materials, an oxide, a nitride, or graphite.
6. The magnetic memory of claim 2 , wherein the nonmagnetic layer comprises at least one material selected from a group of copper, silver, gold, aluminum, and platinum, a combination alloy related to these elements, an oxide, a nitride, or graphite.
7. The magnetic memory of claim 3 , wherein the nonmagnetic layer comprises at least one material selected from a group of copper, silver, gold, aluminum, and platinum, a combination alloy related to these elements, an oxide, a nitride, or graphite.
8. The magnetic memory of claim 4 , wherein the nonmagnetic layer comprises at least one material selected from a group of copper, silver, gold, aluminum, and platinum, a combination alloy related to these elements, an oxide, a nitride, or graphite.
9. The magnetic memory of claim 1 , further comprising:
means to apply an electric current between the first electrode and the second electrode;
means to apply an electric current between the second electrode and the third electrode;
means to read a resistance between the first electrode and the second electrode.
10. The magnetic memory of claim 2 , further comprising:
means to apply an electric current between the first electrode and the second electrode;
means to apply an electric current between the second electrode and the third electrode;
means to read a resistance between the first electrode and the second electrode.
11. The magnetic memory of claim 3 , further comprising:
means to apply an electric current between the first electrode and the second electrode;
means to apply an electric current between the second electrode and the third electrode;
means to read a resistance between the first electrode and the second electrode.
12. The magnetic memory of claim 4 , further comprising:
means to apply an electric current between the first electrode and the second electrode;
means to apply an electric current between the second electrode and the third electrode;
means to read a resistance between the first electrode and the second electrode.
13. The magnetic memory of claim 5 , further comprising:
means to apply an electric current between the first electrode and the second electrode;
means to apply an electric current between the second electrode and the third electrode;
means to read a resistance between the first electrode and the second electrode.
14. A magnetic memory device, comprising:
a first magnetic memory comprising:
a first magnetic thin line including a plurality of magnetic domains;
a first reference layer having a magnetization and surrounding one end of the first magnetic thin line;
a first nonmagnetic layer provided between the first reference layer and the first magnetic thin line;
a first fixed magnetization part having a magnetization and a second fixed magnetization part having a magnetization; provided at both ends of the first reference layer, wherein the magnetization of the first fixed magnetization part is opposite to the magnetization of the second fixed magnetization part;
a first electrode provided at the first fixed magnetization part;
a second electrode provided at the second fixed magnetization part; and
a third electrode provided at other end of the first magnetic thin line; and
a second magnetic memory comprising:
a second magnetic thin line including a plurality of magnetic domains;
a second reference layer having a magnetization and surrounding one end of the second magnetic thin line;
a second nonmagnetic layer provided between the second reference layer and the second magnetic thin line;
a third fixed magnetization part having a magnetization and a fourth fixed magnetization part having a magnetization, provided at both ends of the second reference layer, wherein the magnetization of the third fixed magnetization part is opposite to the magnetization of the fourth fixed magnetization part;
a fourth electrode provided at the first fixed magnetization part;
a fifth electrode provided at the second fixed magnetization part; and
a sixth electrode provided at other end of the second magnetic thin line.
15. The magnetic memory device of claim 14 , wherein the third electrode and the sixth electrode are interconnected.
16. The magnetic memory device of claim 14 , wherein the first electrode and the fourth electrode are interconnected.
17. The magnetic memory device of claim 14 , wherein the first reference layer and the second reference layer are interconnected.