Semiconductor device and method of manufacturing semiconductor device
A method of manufacturing a semiconductor device includes: arranging a solder material containing at least tin, between a semiconductor element and a joined member provided with a nickel layer and a copper layer, such that the solder material is in contact with the copper layer, the nickel layer being provided on a surface of the joined member, and the copper layer being provided on at least a portion of a surface of the nickel layer; and melting and solidifying the solder material to form Cu 6 Sn 5 on the surface of the nickel layer using tin of the solder material and the copper layer.
1. A method of manufacturing a semiconductor device comprising:
arranging a solder material containing at least tin, between a semiconductor element and a joined member provided with a nickel layer and a copper layer, such that the solder material is in contact with the copper layer, the nickel layer being provided on a surface of the joined member, and the copper layer being provided on at least a portion of a surface of the nickel layer; and
melting and solidifying the solder material to form Cu 6 Sn 5 on the surface of the nickel layer using tin of the solder material and the copper layer,
wherein
a sum of a weight of copper contained in the solder material and a weight of copper in a region in contact with the solder material is 2,0 wt % or higher with respect to a sum of a weight of the solder material and a weight of copper in the region in contact with the solder material.
2. The method of manufacturing a semiconductor device according to claim 1 wherein
a sum of a weight of copper contained in the solder material and a weight of copper in a region in contact with the solder material is 7.6 wt % or lower with respect to a sum of a weight of the solder material and a weight of copper in the region in contact with the solder material.
3. The method of manufacturing a semiconductor device according to claim 1 wherein
the solder material contains copper.
4. The method of manufacturing a semiconductor device according to claim 3 , wherein
the solder material is an alloy containing Sn-0.7Cu as a major component.
5. A semiconductor device comprising:
a semiconductor element;
a joined member on which a nickel layer is provided; and
a joining layer through which the joined member is joined to the semiconductor element, wherein
the joining layer includes a solder portion and a Cu 6 Sn 5 portion, the solder portion containing at least tin, and the Cu 6 Sn 5 portion being provided between the nickel layer and the solder portion,
the Cu 6 Sn 5 portion is in contact with a portion of a surface of the nickel layer and is not in contact with other portions of the surface of the nickel layer, and
a proportion of copper contained in the joining layer is 2.0 wt % or higher.
6. A semiconductor device comprising:
a semiconductor element;
a joined member on which a nickel layer is provided; and
a joining layer through which the joined member is joined to the semiconductor element, wherein
the joining layer includes a solder portion and a Cu 6 Sn 5 portion, the solder portion containing tin and copper, and the Cu 6 Sn 5 portion being provided between the nickel layer and the solder portion, and
a weight of copper contained in the solder portion is lower than 0.9 wt % with respect to a weight of the solder portion.
7. A method of manufacturing a semiconductor device comprising:
arranging a solder material containing at least tin, between a semiconductor element and a joined member provided with a nickel layer and a copper layer, such that the solder material is in contact with the copper layer, the nickel layer being provided on a surface of the joined member, and the copper layer being provided on at least a portion of a surface of the nickel layer; and
melting and solidifying the solder material to form Cu 6 Sn 5 on the surface of the nickel layer using tin of the solder material and the copper layer,
wherein
a sum of a weight of copper contained in the solder material and a weight of copper in a region in contact with the solder material is 7.6 wt % or lower with respect to a sum of a weight of the solder material and a weight of copper in the region in contact with the solder material.