Magnetic memory element and magnetic memory

1. A magnetic memory element, comprising:

a first magnetic unit including a plurality of magnetic domains arranged in a direction in which the first magnetic unit extends, the first magnetic unit including a first portion and a second portion;

a second magnetic unit including a first region and a second region, the first region including a conductive material, the second region including an insulating material, at least one of the first region or the second region being magnetic;

a first insulating unit provided between the first magnetic unit and the second magnetic unit;

a first electrode connected to the first portion;

a second electrode connected to the second portion; and

a third electrode, a part of the second magnetic unit and a part of the first insulating unit being provided between the third electrode and a part of the first magnetic unit.

2. The element according to claim 1 , wherein

the second magnetic unit includes a plurality of the first regions, and

the plurality of first regions is provided to be separated from each other inside the second region.

3. The element according to claim 1 , wherein

the first region includes a magnetic material, and

the second region includes a nonmagnetic material.

4. The element according to claim 1 , wherein a magnetization direction of the first magnetic unit changes more easily than a magnetization direction of the second magnetic unit.

5. The element according to claim 1 , wherein a distance between the second electrode and the third electrode is shorter than a distance between the first electrode and the third electrode.

6. The element according to claim 1 , further comprising:

a nonmagnetic unit provided between the first magnetic unit and the first insulating unit; and

a third magnetic unit provided between the nonmagnetic unit and the first insulating unit, a magnetization direction of the third magnetic unit being changeable.

7. The element according to claim 1 , further comprising:

a substrate; and

a second insulating unit provided on the substrate,

the first magnetic unit further including a first extension portion, the first portion provided on the substrate, the second portion provided on the second insulating unit, the first extension portion extending in a first direction and including the plurality of magnetic domains arranged in the first direction, the first direction intersecting a surface of the substrate, one end in the first direction of the first extension portion being connected to the first portion, one other end in the first direction of the first extension portion being connected to the second portion,

the first electrode being connected to the first portion,

the second electrode being connected to the second portion.

8. The element according to claim 7 , wherein

the second electrode is provided between the second insulating unit and the first magnetic unit, and

the part of the first magnetic unit, the part of the first insulating unit, and the part of the second magnetic unit are provided between the second electrode and the third electrode.

9. The element according to claim 7 , wherein

the second magnetic unit includes:

a third portion, the third portion and at least a part of the first portion overlapping in the first direction; and

a fourth portion, the fourth portion and at least a part of the second portion overlapping in the first direction,

a thickness in the first direction of the third portion is thinner than a thickness in the first direction of the fourth portion.

10. The element according to claim 7 , wherein

the second portion and the second magnetic unit overlap in the first direction, and

the first portion and the second magnetic unit do not overlap in the first direction.

11. The element according to claim 7 , wherein an easy magnetization axis of the first extension portion is aligned with a second direction intersecting the first direction.

12. The element according to claim 11 , wherein

an easy magnetization axis of the first portion is aligned with the second direction, and

an easy magnetization axis of the second portion is aligned with the second direction.

13. The element according to claim 7 , wherein

the first insulating unit includes a second extension portion extending in the first direction,

the first extension portion is provided around the second extension portion, and

the second insulating unit is provided around the first extension portion.

14. The element according to claim 13 , wherein

the first extension portion includes:

a plurality of fifth portions, a distance from one end in a second direction to one other end in the second direction being a first value for each of the plurality of fifth portions, the second direction intersecting the first direction; and

a plurality of sixth portions, a distance from one end in the second direction intersecting the first direction to one other end in the second direction being a second value for each of the plurality of sixth portions, the second value being less than the first value, and

the fifth portions are arranged alternately with the sixth portions along the first direction.

15. The element according to claim 1 , further comprising:

a first current source connected to the first electrode and the second electrode; and

a second current source connected to the second electrode and the third electrode.

16. A magnetic memory, comprising:

a plurality of the magnetic memory elements according to claim 1 ;

a first transistor including a first gate, a first terminal, and a second terminal, the first terminal being connected to the first electrode of one of the plurality of magnetic memory elements;

a second transistor including a second gate, a third terminal, and a fourth terminal, the third terminal being connected to the second electrode of the one of the plurality of magnetic memory elements;

a first word line connected to the first gate;

a second word line connected to the second gate;

a first bit line connected to the third electrode of the one of the plurality of magnetic memory elements;

a second bit line connected to the second terminal; and

a third bit line connected to the fourth terminal.