Light emitting device, light emitting device package having the same and light system having the same
A light emitting device is provided that may include a substrate, a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer provided on the substrate, a first electrode on the first conductive semiconductor layer, and a schottky guide ring configured to surround the first electrode and directly connect with the first conductive semiconductor layer.
1. A light emitting device comprising:
a substrate;
a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer provided on the substrate;
a first electrode on the first conductive semiconductor layer;
a schottky guide ring configured to surround the first electrode and directly connect with the first conductive semiconductor layer; and
an insulating layer between the first electrode and the schottky guide ring,
wherein the schottky guide ring includes:
a first schottky guide ring on the insulating layer; and
a second schottky guide ring and a third schottky guide ring configured to pass through the insulating layer.
2. The light emitting device of claim 1 , wherein the first schottky guide ring includes a first metallic layer and a second metallic layer, wherein the first metallic layer includes at least one of silver (Ag) and aluminum (Al), and the second metallic layer includes nickel (Ni).
3. The light emitting device of claim 2 , wherein the first metallic layer has a thickness in a range of 200 nm to 300 nm, and the second metallic layer has a thickness in a range of 0.5 nm to 2 nm.
4. The light emitting device of claim 1 , wherein the schottky guide ring has at least one protrusion at sides thereof.
5. The light emitting device of claim 4 , wherein each protrusion has a width in a range of 2 μm to 3 μm.
6. The light emitting device of claim 1 , wherein the second schottky guide ring and the third schottky guide ring each have heights in a range of 0.7 μm to 1 μm.
7. The light emitting device of claim 1 , wherein a width of an interval between the first electrode and the second schottky guide ring is equal to a width of an interval between the first electrode and the third schottky guide ring.
8. The light emitting device of claim 7 , wherein the width of the interval between the first electrode and the second schottky guide ring and the width of the interval between the first electrode and the third schottky guide ring are 0.5 μm or less.
9. The light emitting device of claim 1 , further comprising a fourth schottky guide ring configured to connect the first schottky guide ring to the first electrode.
10. The light emitting device of claim 1 , wherein the schottky guide ring is configured to surround the first electrode.
11. A light system comprising the light emitting device according to claim 1 .
12. A light emitting device comprising:
a substrate;
a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on the substrate;
a first electrode on the first conductive semiconductor layer;
a schottky guide ring configured to surround the first electrode and directly connected with the first conductive semiconductor layer;
a first insulating layer between the first electrode and the schottky guide ring;
a second insulating layer on the first insulating layer; and
a second schottky guide ring configured to directly connect with the schottky guide ring.
13. The light emitting device of claim 12 , wherein the second schottky guide ring includes:
a third schottky guide ring passing through the second insulating layer; and
a fourth schottky guide ring provided on the second insulating layer and configured to connect with the third schottky guide ring.
14. The light emitting device of claim 13 , further comprising a fifth schottky guide ring passing through the second insulating layer and configured to vertically connect with the first schottky guide ring.
15. The light emitting device of claim 14 , further comprising a sixth schottky guide ring provided on the second insulating layer and configured to vertically connect with the fifth schottky guide ring.
16. The light emitting device of claim 14 , wherein the fifth schottky guide ring has a width equal to a width of the first electrode.
17. The light emitting device of claim 13 , wherein a width of an interval between the first electrode and the second schottky guide ring is equal to a width an interval between the first electrode and the third schottky guide ring.
18. The light emitting device of claim 13 , wherein the width of the interval between the first electrode and the second schottky guide ring and the width of the interval between the first electrode and the third schottky guide ring is 0.5 μm or less.
19. A light system compromising the light emitting device according to claim 12 .
20. The light emitting device of claim 1 , wherein the first schottky guide ring is connected to both the second schottky guide ring and the third schottky guide ring.
21. The light emitting device of claim 1 , wherein the second schottky guide ring and the third schottky guide ring are in contact with the first conductive semiconductor layer.
22. The light emitting device of claim 4 , wherein each protrusion is disposed on the insulating layer.