Laser etched scintillation detector blocks with internally created reflectors
A scintillator element is disclosed where the scintillator element includes a scintillator formed of a scintillation material capable of converting non-visible radiation into scintillation light, wherein the scintillator has a plurality of laser-etched micro-voids within the scintillator, each micro-void having an interior surface, and an intrinsic reflective layer is formed on the interior surface of at least some of the micro-voids, wherein the intrinsic reflective layer is formed from the scintillation material.
1. A radiation detector, comprising:
a scintillator formed of a scintillation material capable of converting non-visible radiation into scintillation light, wherein the scintillator has a plurality of laser-etched micro-voids within the scintillator, each micro-void having an interior surface;
a reflective layer formed on the interior surface of each micro-void, wherein the reflective layer is formed from the scintillation material; and
one or more optical sensors positioned in proximity to the scintillator, to detect the scintillation light from the scintillator.
2. The radiation detector of claim 1 , further comprising an additional intrinsic reflective layer formed on outer surfaces of the scintillator, wherein the additional intrinsic reflective layer is also formed from the scintillation material.
3. The radiation detector of claim 2 , wherein the additional intrinsic reflective layer covers the scintillator on all outer surfaces except one or more outer surface portions of the scintillator facing the optical sensors.
4. The radiation detector of claim 2 , further comprising a layer of reflective paint applied on the intrinsic reflective layer.
5. The radiation detector of claim 2 , further comprising titanium tetracholoride (TiCl 4 ) or silicon tetracholoride (SiCl 4 ) applied to the additional intrinsic reflective layer to fill any voids in the additional intrinsic reflective layer.
6. The radiation detector of claim 2 , further comprising a metal film formed on the additional intrinsic reflective layer.
7. The radiation detector of claim 2 , further comprising Enhanced Specular Reflector composite material directly on the surface of the additional intrinsic reflective layer.
8. The radiation detector of claim 2 , wherein the scintillation material is Gd 3 Ga 3 Al 2 O 12 and the intrinsic reflective layer and the additional intrinsic reflective layer comprise GdAlO 3 .
9. The radiation detector of claim 1 , wherein the scintillation material is a gallium containing material having a general formula A 3 (B,C) 5 O 12 doped with Ce and co-doped with one or more of B, Ba, Ca, Mg, Sr or any combination thereof;
wherein A is selected from the group consisting of Y, La, Pr, Gd, Tb, Dy, Lu, Sc, and any combination thereof;
wherein B is selected from the group consisting of Al, Ga, and Sc; and
C is selected from the group consisting of Al and Ga.
10. The radiation detector of claim 1 , wherein the scintillation material is Gd 3 Ga 3 Al 2 O 12 and the intrinsic reflective layer comprises GdAlO 3 .
11. The radiation detector of claim 1 , wherein the scintillator further comprising:
a plurality of micro-cracks within the scintillator, each micro-crack having two or more surfaces forming the micro-cracks; and
additional intrinsic reflective layers formed on the two or more surfaces of each micro-crack, wherein the additional intrinsic reflective layers are formed from the scintillation material.
12. The radiation detector of claim 11 , wherein the scintillation material is Gd 3 Ga 3 Al 2 O 12 and the additional intrinsic reflective layers comprise GdAlO 3 .
13. A scintillator element comprising:
a scintillator formed of a scintillation material capable of converting non-visible radiation into scintillation light, wherein the scintillator has a plurality of laser-etched micro-voids within the scintillator, each micro-void having an interior surface; and
an intrinsic reflective layer formed on the interior surface of at least some of the micro-voids, wherein the intrinsic reflective layer is formed from the scintillation material.
14. The scintillator element of claim 13 , further comprising an additional intrinsic reflective layer formed on outer surfaces of the scintillator, wherein the additional intrinsic reflective layer is also formed from the scintillation material.
15. The scintillator element of claim 14 , wherein the additional intrinsic reflective layer covers the scintillator on all outer surfaces except one or more outer surface portions of the scintillator facing the optical sensors.
16. The scintillator element of claim 14 , further comprising a layer of reflective paint applied on the additional intrinsic reflective layer.
17. The scintillator element of claim 14 , further comprising titanium tetracholoride (TiCl 4 ) or silicon tetracholoride (SiCl 4 ) applied to the additional intrinsic reflective layer to fill any voids in the additional intrinsic reflective layer.
18. The scintillator element of claim 14 , further comprising a metal film formed on the additional intrinsic reflective layer.
19. The scintillator element of claim 13 , wherein the scintillator further comprising:
a plurality of micro-cracks within the scintillator, each micro-crack having two or more surfaces forming the micro-cracks; and
additional intrinsic reflective layers formed on the two or more surfaces of each micro-crack, wherein the additional intrinsic reflective layers are formed from the scintillation material.
20. The scintillator element of claim 13 , wherein the scintillation material is Gd 3 Ga 3 Al 2 O 12 and the intrinsic reflective layer comprises GdAlO 3 .
21. The scintillator element of claim 14 , wherein the scintillation material is Gd 3 Ga 3 Al 2 O 12 and the intrinsic reflective layer and the additional intrinsic reflective layer comprise GdAlO 3 .