Resistive memory device and fabrication methods

1. A resistive memory device comprises:

a substrate comprising a first metal material;

a monolithic semiconductor layer formed on the first metal material, wherein the monolithic semiconductor layer comprises an upper region and a lower region, wherein the lower region of the monolithic semiconductor layer comprises a conductive silicon-bearing material, and wherein the upper region of the monolithic semiconductor layer comprises an amorphous silicon-bearing material having a plurality of defect sites and comprising silicon and another material, and wherein the lower region is adjacent to the first metal material;

an active metal material disposed above the upper region; and

wherein the plurality of defects sites of the amorphous silicon-bearing material are configured to receive metallic ions from the active metal material.

2. The resistive memory device of claim 1 , wherein the other material is oxygen.

3. The resistive memory device of claim 2 ,

wherein the amorphous silicon-bearing material comprises a resistive switching material comprising the silicon and the oxygen.

4. The resistive memory device of claim 3 , wherein the active metal material comprises a metal selected from a group consisting of aluminum, silver, platinum, palladium, copper, nickel, and combination thereof.

5. The resistive memory device of claim 2 , wherein the upper region of the monolithic semiconductor layer has a thickness within a range of approximately 2 to approximately 3 nanometers.

6. The resistive memory device of claim 2 , wherein the upper region of the monolithic semiconductor layer has a thickness within a range of approximately 2 to approximately 5 nanometers.

7. The resistive memory device of claim 2 ,

wherein the conductive silicon-bearing material is selected from a group consisting of a polysilicon material and a silicon-germanium material; and wherein the conductive silicon-bearing material comprises a p-type dopant.

8. The resistive memory device of claim 2 , wherein the first metal material comprises:

a metal selected from a group consisting of: copper and aluminum; and

a contact material disposed above the metal and selected from a group consisting of titanium, titanium nitride, tantalum, tantalum nitride, tungsten, and tungsten nitride.

9. The resistive memory device of claim 1 , wherein the upper region is formed from a portion of the conductive silicon-bearing material subjected to an Argon plasma etch process.

10. The resistive memory device of claim 9 , wherein the Argon plasma etch comprises an Argon plasma etch process having a voltage within a range of approximately 30 volts to approximately 20 volts.

11. A semiconductor device comprises:

a semiconductor substrate;

at least one CMOS device formed upon the semiconductor substrate;

a first dielectric layer disposed above the at least one CMOS device;

a first wiring layer disposed above the first dielectric layer, wherein the first wiring layer is coupled to a CMOS device of the at least one CMOS device, wherein the first wiring layer comprises a first metal material;

a monolithic semiconductor layer disposed on the first wiring layer and comprising a conductive silicon-bearing material, wherein the monolithic semiconductor layer comprises an upper region and a lower region, wherein the lower region of the monolithic semiconductor layer comprises the conductive silicon-bearing material and the upper region of the monolithic semiconductor layer comprises an amorphous silicon-bearing material having a plurality of defect sites and comprising silicon and another material, and wherein the lower region is adjacent to the first wiring layer;

an active metal layer disposed above the upper region of the monolithic semiconductor layer, wherein the plurality of defects sites of the amorphous silicon-bearing material are configured to receive metallic ions from the active metal material; and

a second wiring layer disposed above the active metal layer;

wherein a resistive memory device is formed from the monolithic semiconductor layer and the active metal layer.

12. The semiconductor device of claim 11 wherein the other material is oxygen.

13. The semiconductor device of claim 12 ,

wherein the amorphous silicon-bearing material comprises a resistive switching material having the silicon and the oxygen.

14. The semiconductor device of claim 13 ,

wherein the active metal layer is configured to provide metallic ions; and

wherein the amorphous silicon-bearing material comprises a resistive switching material that includes metallic ions from the active metal layer.

15. The semiconductor device of claim 14 , wherein the metallic ions from the active metal layer within the resistive switching material forms a controlled conductive path through the resistive switching material.

16. The semiconductor device of claim 13 , wherein the active metal material comprises a metal selected from a group consisting of aluminum, silver, platinum, palladium, copper, and nickel.

17. The semiconductor device of claim 12 , wherein the at least one CMOS device forms at least one device selected from a group consisting of processing logic, computational logic, memory, and a driver for the resistive memory device.

18. The semiconductor device of claim 12 ,

wherein the conductive silicon-bearing material is selected from a group consisting of a polysilicon material and a silicon-germanium material; and

wherein the conductive silicon-bearing material comprises a p-type dopant.

19. The semiconductor device of claim 12 , wherein the first wiring layer comprises:

a metal selected from a group consisting of copper and aluminum; and

a contact material disposed above the metal and selected from another group consisting of titanium, titanium nitride, tantalum, tantalum nitride, tungsten, and tungsten nitride.

20. The semiconductor device of claim 11 , wherein the upper region is formed from a portion of the conductive silicon-bearing material subjected to a plasma etch or ion implantation that includes a gas selected from a group consisting of argon, silicon and oxygen.