IP Library Granted Patent US 9,678,037
Granted Patent B2
US 9,678,037 · App. 14/878,616 · Granted Jun 13, 2017

Two-dimensional material-based field-effect transistor sensors

Inventors: Xiaogan Liang (Ann Arbor, MI); Katsuo Kurabayashi (Ann Arbor, MI)
Assignee: The Regents Of The University Of Michigan
G01N27/4146G01N33/6863H01L29/7781G01N2333/525
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Quick Facts
Patent No.
US 9,678,037
App. No.
14/878,616
Granted
Jun 13, 2017
Kind
B2
Abstract

Atomically layered transition metal dichalcogenides (TMDCs) exhibit a significant potential to enable low-cost transistor biosensors that permit single-molecule-level quantification of biomolecules. Two different principles for operating such biosensors are presented. In one arrangement, antibody receptors are functionalized on an insulating layer deposited onto the channel of the transistor. The charge introduced through antigen-antibody binding is capacitively coupled with the channel and shifts the threshold voltage without significantly changing the transconductance. In another arrangement, antibodies are functionalized directly on the channel of the transistor. Antigen-antibody binding events mainly modulate the ON-state transconductance, which is attributed to the disordered potential formed in channel material.

Claims (24)

1. A biosensor, comprising:

a substrate;

a field effect transistor (FET) formed on the substrate, wherein the FET includes a channel comprised of a monolayer of transition metal dichalcogenides;

an antibody functionalized onto an exposed top surface of the channel of the FET; and

a reservoir layer deposited on top of the FET and enclosing the exposed top surface of the channel of the FET, wherein the reservoir layer forms a fluidic channel over top the exposed top surface of the channel of the FET and the fluidic channel has an inlet and an outlet.

2. The biosensor of claim 1 further comprises a pump fluidly coupled via a tube to the inlet of the fluidic channel and operable to drive an analyte of interest through the fluidic channel.

3. The biosensor of claim 2 further comprises a controller electrically connected to the FET, wherein the controller regulates conductance of the FET and measures transfer characteristics of the FET while an analyte of interest passes through the fluidic channel.

4. The biosensor of claim 2 further comprises a controller electrically connected to the FET, wherein the controller operates the FET in a subthreshold region and measures drain-to-source current of the FET while an analyte of interest passes through the fluidic channel.

5. The biosensor of claim 1 is fabricated using top-down lithographic techniques.

6. The biosensor of claim 1 wherein the monolayer of transition metal dichalcogenides is further defined as molybdenum disulfide or tungsten diselenide.

7. The biosensor of claim 1 wherein the reservoir layer is further defined as a silicone.

8. The biosensor of claim 1 wherein the analyte of interest is tumor necrosis factor alpha.

9. A biosensor, comprising:

a substrate;

a field effect transistor (FET) formed on the substrate, wherein the FET includes a channel comprised of a monolayer of transition metal dichalcogenides;

an antibody functionalized onto an exposed surface of the channel of the FET;

a reservoir layer deposited on top of the FET, wherein the reservoir layer forms a fluidic channel over top of the exposed surface of the channel of the FET and the fluidic channel having an inlet and an outlet, such that the fluidic channel does not pass through the channel of the FET and the top surface of the FET forms wall on bottom of the fluidic channel; and

a pump fluidly coupled via a tube to the inlet of the fluidic channel.

10. The biosensor of claim 9 further comprises a controller electrically connected to the FET, wherein the controller regulates conductance of the FET and measures transfer characteristics of the FET while an analyte of interest passes through the fluidic channel.

11. The biosensor of claim 9 further comprises a controller electrically connected to the FET, wherein the controller operates the FET in a subthreshold region and measures drain-to-source current of the FET while an analyte of interest passes through the fluidic channel.

12. The biosensor of claim 9 is fabricated using top-down lithographic techniques.

13. The biosensor of claim 9 wherein the monolayer of transition metal dichalcogenides is further defined as molybdenum disulfide or tungsten diselenide.

14. The biosensor of claim 9 wherein the reservoir layer is further defined as a silicone.

15. The biosensor of claim 9 wherein the analyte of interest is tumor necrosis factor alpha.

Assignments (2)
CONFIRMATORY LICENSE Recorded Aug 2, 2017
From: UNIVERSITY OF MICHIGAN
To: NATIONAL SCIENCE FOUNDATION
Reel/Frame 043167/0687 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 25, 2015
From: LIANG, XIAOGAN; KURABAYASHI, KATSUO
To: THE REGENTS OF THE UNIVERSITY OF MICHIGAN
Reel/Frame 037138/0057 →
Continuity (1)
Related Publication 20170102357A1 · Apr 13, 2017