OLED pixel structure and OLED display device
The present invention belongs to the technical field of display, and specifically relates to an OLED pixel structure and an OLED display device. The OLED pixel structure comprises a thin film transistor and an OLED device, the thin film transistor being provided with a driving electrode for controlling whether the OLED device emits light or not, wherein the pixel structure comprises a transmission region and a reflection region in which a reflection layer formed by extending the driving electrode is provided. The beneficial advantages are that the OLED pixel structure can effectively improve the utilization of the light source and the utilization of the display panel.
1. An OLED pixel structure, comprising a thin film transistor and an OLED device, the thin film transistor being provided therein with a driving electrode for controlling whether the OLED device emits light or not,
wherein the OLED pixel structure comprises a transmission region, and a reflection region in which a reflection layer formed by extending the driving electrode is provided,
wherein the reflection layer is integrated with and disposed at a same layer as the driving electrode, and
wherein the transmission region of the OLED pixel structure is capable of transmitting ambient light, and the reflection region is capable of reflecting ambient light so that ambient light outgoes from a single side of the OLED pixel structure.
2. The OLED pixel structure of claim 1 , wherein the driving electrode comprises a gate, or a source and a drain which are provided in a same layer, the reflection layer being formed by extending the gate or the drain towards a center of the pixel structure.
3. The OLED pixel structure of claim 2 , wherein the OLED device is of top-emitting structure and comprises an anode and a cathode which are arranged opposite to each other; the reflection layer is arranged under the anode and partially overlapped with the anode in a direction of orthographic projection.
4. The OLED pixel structure of claim 3 , wherein the reflection layer is formed by using a same material as the gate or the drain.
5. The OLED pixel structure of claim 4 , wherein the anode and the cathode are formed by using a transparent electrode material or a metal alloy material having equivalent transparent effect, and the reflection layer is formed by using aluminum, copper, molybdenum, aluminum-neodymium alloy, chromium, titanium, or silver.
6. The OLED pixel structure of claim 5 , wherein the reflection layer is formed by using a same patterning process as that for the gate or the drain.
7. The OLED pixel structure of claim 6 , wherein the reflection layer has a same thickness as that of the gate or the drain.
8. The OLED pixel structure of claim 7 , wherein an area ratio of the reflection layer to the transmission region is 1:1.
9. The OLED pixel structure of claim 2 , wherein an area ratio of the reflection layer to the transmission region is 1:1.
10. The OLED pixel structure of claim 3 , wherein an area ratio of the reflection layer to the transmission region is 1:1.
11. The OLED pixel structure of claim 4 , wherein an area ratio of the reflection layer to the transmission region is 1:1.
12. The OLED pixel structure of claim 5 , wherein an area ratio of the reflection layer to the transmission region is 1:1.
13. The OLED pixel structure of claim 6 , wherein an area ratio of the reflection layer to the transmission region is 1:1.
14. The OLED pixel structure of claim 1 , wherein an area ratio of the reflection layer to the transmission region is 1:1.
15. An OLED display device comprising a plurality of pixel structures, wherein each of the pixel structures is the OLED pixel structure of claim 1 .
16. The OLED display device of claim 15 , wherein the driving electrode comprises a gate, or a source and a drain which are provided in a same layer, the reflection layer being formed by extending the gate or the drain towards a center of the pixel structure.
17. The OLED display device of claim 16 , wherein the OLED device is of top-emitting structure and comprises an anode and a cathode which are arranged opposite to each other; the reflection layer is arranged under the anode and partially overlapped with the anode in a direction of orthographic projection.
18. The OLED display device of claim 17 , wherein the reflection layer is formed by using a same material as the gate or the drain.
19. The OLED display device of claim 18 , wherein the anode and the cathode are formed by using a transparent electrode material or a metal alloy material having equivalent transparent effect, and the reflection layer is formed by using aluminum, copper, molybdenum, aluminum-neodymium alloy, chromium, titanium, or silver.
20. The OLED pixel structure of claim 1 , wherein the reflection layer is formed by contiguously extending the driving electrode.