Thermoelectric device
The present invention is directed to a thermoelectric device that includes a plurality of thermoelectric couples positioned between a top plate and a bottom plate, wherein each thermoelectric couple comprises n-type and p-type element assemblies electrically connected in series and thermally connected in parallel. When the device is used for electrical power generation, the efficiency is increased by using semiconductor materials with a high Seebeck coefficient, increasing the distance between the n-type and p-type element assemblies, increasing the length of the electrical conductors/thermal distance between the top and bottom plates, and/or using an insulation plate spaced from the top plate. When the device is used for heating/cooling, the coefficients of performance are increased by using semiconductor materials with a high Seebeck coefficient and/or optimizing the length of the electrical conductors/thermal distance between the top and bottom plates.
1. A thermoelectric device connectable to a power source and configurable for use as either a heating device or a cooling device, said device comprising:
a first plate spaced from a second plate;
a plurality of thermoelectric couples positioned between the first and second plates, wherein the thermoelectric couples are electrically connected in series and thermally connected in parallel, wherein each of the thermoelectric couples comprises:
an n-type element assembly comprising a first n-type semiconductor element connected to a second n-type semiconductor element via a first electrical conductor;
a p-type element assembly comprising a first p-type semiconductor element connected to a second p-type semiconductor element via a second electrical conductor; and
wherein the n-type and p-type element assemblies are electrically connected in series and thermally connected in parallel; and
a first heat sink coupled to the first plate and a second heat sink coupled to the second plate, wherein the second heat sink include a plurality of openings and is moveable between an open position in which air is allowed to pass through the openings and a closed position in which air is prevented from passing through the openings, wherein the second heat sink is in the closed position when the device is configured for use as a heating device, and wherein the second heat sink is in the open position when the device is configured for use as a cooling device.
2. The thermoelectric device of claim 1 , wherein the first heat sink is configured for placement adjacent an inside wall of a structure and wherein the second heat sink is configured for placement adjacent an outside wall of the structure.
3. The thermoelectric device of claim 2 , wherein at least a portion of the first heat sink is configured for placement inside an air duct of the structure.
4. The thermoelectric device of claim 1 , wherein the power source has a first electrical polarity when the device is configured for use as a heating device, and wherein the power source has a second electrical polarity when the device is configured for use as a cooling device.
5. The thermoelectric device of claim 1 , wherein the device has a coefficient of performance for heating (COPH) in a range of about 5 to about 20 when the device is configured for use as a heating device.
6. The thermoelectric device of claim 1 , wherein the device has a coefficient of performance for refrigeration (COPR) in a range of about 4 to about 10 when the device is configured for use as a cooling device.
7. The thermoelectric device of claim 1 , wherein the first and second plates are each formed of polyphenylene sulfide (PPS) doped with boron nitride.
8. The thermoelectric device of claim 1 , wherein the first and second plates are each formed of ceramic doped with aluminum nitride.
9. The thermoelectric device of claim 1 , wherein the n-type semiconductor elements are each formed of a material having a Seebeck coefficient with a negative value greater than about −250 μV/° K, and wherein the p-type semiconductor elements are each formed of a material having a Seebeck coefficient with a positive value greater than about 250 μV/° K.
10. The thermoelectric device of claim 9 , wherein the n-type and p-type semiconductor elements are each formed of a material having a thermal conductivity greater than about 0.1 W/cm·° K.
11. The thermoelectric device of claim 1 , wherein the electrical conductors each have a ratio of electrical conductivity to thermal conductivity in a range of 1.3×10 5 S° K/W to about 1.6×10 5 S° K/W.