IP Library Granted Patent US 9,687,876
Granted Patent B2
US 9,687,876 · App. 14/375,579 · Granted Jun 27, 2017

Method of repairing and/or protecting a surface in a reactor

Inventor: Brad Jason Werner (Bay City, MI)
Assignee: HEMLOCK SEMICONDUCTOR CORPORATION
B05D5/00B01J19/02B05D3/0209B05D3/0254B05D7/22B05D7/52C09D183/00C09D183/16B01J2219/00024B01J2219/00272B01J2219/0236B05D3/0272B05D3/0486B05D5/005B05D2518/10B05D2518/12
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 9,687,876
App. No.
14/375,579
Granted
Jun 27, 2017
Kind
B2
Abstract

A method of forming a heterogeneous protective layer on a surface of a component in a reactor is useful for repair and/or protection. The reactor may be used for production of polycrystalline silicon or a reactant thereof. The heterogeneous protective layer comprises silicon, and may comprise silicon carbide (SiC) and/or silicon nitride (Si 3 N 4 ). The method comprises providing a polymeric composition for forming the heterogeneous protective layer. The polymeric composition may comprise a polycarbosilane and/or a polysilazane. The method further comprises providing the component. The surface of the component comprises carbon, such as graphite, carbon fiber reinforced carbon, or a combination thereof. The method further comprises applying the polymeric composition on the surface to form a pre-cured coating layer. The method further comprises heating the pre-cured coating layer to form the heterogeneous protective layer. The surface of the component is present within the reactor during heating of the pre-cured coating layer.

Claims (44)

1. A method of forming a heterogeneous protective layer on a surface of a component of a reactor with the heterogeneous protective layer comprising silicon, said method comprising the steps of:

providing a polymeric composition for forming the heterogeneous protective layer;

providing the component with the surface of the component comprising carbon;

applying the polymeric composition on the surface of the component to form a pre-cured coating layer; and

heating the pre-cured coating layer to form the heterogeneous protective layer;

wherein the surface of the component is present within the reactor during heating of the pre-cured coating layer.

2. The method of claim 1 wherein the surface of the component is also present within the reactor during application of the polymeric composition.

3. The method of claim 1 , wherein the pre-cured coating layer is heated by feeding a gas composition into the reactor.

4. The method of claim 3 wherein the gas composition:

i) comprises trichlorosilane, silicon tetrachloride, or a combination thereof, and, optionally

ii) further comprises hydrogen.

5. The method of claim 1 , wherein the polymeric composition comprises a polycarbosilane.

6. The method of claim 5 wherein the:

i) polycarbosilane is allylhydridopolycarbosilane; and/or

ii) heterogeneous protective layer comprises silicon carbide.

7. The method of claim 1 , wherein the polymeric composition comprises a polysilazane.

8. The method of claim 7 wherein the:

i) polysilazane is perhydropolysilazane; and/or

ii) heterogeneous protective layer comprises silicon nitride.

9. The method of claim 5 , wherein the polymeric composition further comprises a filler for further forming the heterogeneous protective layer.

10. The method of claim 9 wherein the filler:

i) comprises silicon carbide, silicon nitride, or a combination thereof; and/or

ii) is present in the polymeric composition in an amount of from about 1 to about 80 parts by weight based on 100 parts by weight of the polymeric composition.

11. The method of claim 1 , wherein:

i) the polymeric composition is applied to the surface of the component at a first temperature (T1) and the pre-cured coating layer is heated to a second temperature (T2) which is greater than T1; and, optionally

ii) T2 is of from about 100° C. to about 1750° C.

12. The method of claim 1 , wherein the surface of the component comprises:

i) graphite; and/or

ii) carbon fiber reinforced carbon (CFRC).

13. The method of claim 1 , wherein the surface of the component comprises a base layer and a preformed protective layer disposed over the base layer with the base layer comprising carbon and the preformed protective layer comprising silicon.

14. The method of claim 13 wherein the:

i) preformed protective layer of the surface of the component defines at least one cavity and wherein the polymeric composition is applied such that the at least one cavity of the preformed protective layer is at least partially filled with the heterogeneous protective layer;

ii) preformed protective layer of the surface of the component comprises silicon carbide, silicon nitride, or a combination thereof; and/or

iii) base layer of the surface of the component comprises graphite, carbon fiber reinforced carbon (CFRC), or a combination thereof.

15. The method of claim 1 , further comprising the step of establishing an inert environment in the reactor prior to heating of the pre-cured coating layer.

16. The method of claim 1 , wherein the polymeric composition is applied to the surface of the component by spraying, brushing, knifing, pouring, rolling, dipping, smearing, rubbing, wiping, or combinations thereof.

17. The method of claim 1 , wherein the component in the reactor is an interchanger, a separator, a heater, a chamber surface, or combinations thereof.

18. The method of claim 1 , wherein a first polymeric composition is applied to the surface of the component to form a first pre-cured layer and a second polymeric composition different from the first polymeric composition is applied to the first pre-cured layer to form a second pre-cured layer and wherein both of the first and second pre-cured layers are heated to form the heterogeneous protective layer.

19. The method of claim 1 , wherein the heterogeneous protective layer has an average thickness:

i) greater than about 0.1 mils; or

ii) of from about 0.1 to about 10 mils.

20. The method of claim 1 , wherein the reactor is for production of:

i) polycrystalline silicon, with the polycrystalline silicon comprising the reaction product of trichlorosilane and hydrogen gas; or

ii) trichlorosilane, with the trichlorosilane comprising the reaction product of silicon tetrachloride and hydrogen gas.

Assignments (2)
CHANGE OF NAME Recorded Nov 13, 2017
From: HEMLOCK SEMICONDUCTOR CORPORATION
To: HEMLOCK SEMICONDUCTOR OPERATIONS LLC
Reel/Frame 044428/0248 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 30, 2014
From: WERNER, BRAD
To: HEMLOCK SEMICONDUCTOR CORPORATION
Reel/Frame 033423/0383 →
Continuity (2)
Provisional Application 61592037 · Jan 30, 2012
Related Publication 20150017335A1 · Jan 15, 2015