Process for preparing a glass-ceramic body
A process for preparing glass-ceramic body including the steps of providing a basic glass body and subjecting the basic glass body to a thermal treatment whereby a crystalline phase embedded in a glass matrix is formed. The basic glass body is made of a composition comprising 65 to 72 wt-% SiO 2 , at least 10.1 wt-% Li 2 O and at least 10.1 wt-% Al 2 O 3 based on the total weight of the composition, the proportion of Li 2 O to Al 2 O 3 being from 1:1 to 1.5:1. The thermal treatment involves a nucleation step followed by several crystallization steps at different temperatures, whereby at least two different crystalline phases are formed.
1. A process for preparing a glass-ceramic body comprising providing a basic glass body and subjecting the basic glass body to a thermal treatment, wherein:
a crystalline phase embedded in a glass matrix is formed,
the basic glass body is made of a composition comprising 65 to 72 wt-% SiO 2 , at least 10.1 wt-% Li 2 O, and at least 10.1 wt-% Al 2 O 3 based on a total weight of the composition, the proportion of Li 2 O to Al 2 O 3 being from 1:1 to 1.5:1, and
the thermal treatment comprises a nucleation step that is carried out at a temperature in a range of from 500° C. to 570° C., followed by a first crystallization step at a first temperature range, and a second crystallization step at a second temperature range different from the first temperature range to form at least two different crystalline phases.
2. The process for preparing a glass-ceramic body according to claim 1 , wherein a first region of the glass body is subjected to the first crystallization step and a second region of the glass body different from the first region is subjected to the second crystallization step such that a proportion of the first crystalline phase is higher in the first region than in the second region, and a proportion of the second crystalline phase is higher in the second region than in the first region.
3. The process according to claim 2 , wherein the first region and the second region are heated to the first temperature range and the second temperature range, respectively, by means of laser irradiation, electromagnetic radiation, and/or susceptors.
4. The process according to claim 1 , wherein the first temperature range is from 620 to 820° C., and the second temperature range starts from 825° C.