Semiconductor device, module, and electronic device
View Patent ↗Provided is an element with stable electrical characteristics or a device including plural kinds of elements with stable electrical characteristics. The semiconductor device includes a first insulator, a transistor over the first insulator, a second insulator over the transistor, and a third insulator over the second insulator. The second insulator includes an opening reaching the first insulator. The opening is filled with a fourth insulator. The first insulator, the third insulator, and the fourth insulator each have a lower hydrogen-transmitting property than the second insulator.
1. A semiconductor device comprising:
a first insulator;
a transistor over the first insulator;
a second insulator over the transistor; and
a third insulator over the second insulator,
wherein the second insulator comprises an opening reaching the first insulator, wherein the opening is filled with a fourth insulator,
wherein the first insulator, the third insulator, and the fourth insulator each have a lower hydrogen-transmitting property than the second insulator, and
wherein the opening surrounds the transistor.
2. The semiconductor device according to claim 1 , wherein a channel formation region of the transistor comprises an oxide semiconductor.
3. A module comprising:
the semiconductor device according to claim 1 ; and
a printed wiring board.
4. An electronic device comprising:
the semiconductor device according to claim 1 or the module according to claim 3 ; and
at least one of a speaker, an operation key, and a battery.
5. A semiconductor device comprising:
a first insulator;
a transistor over the first insulator;
a second insulator over the transistor; and
a third insulator over the second insulator,
wherein the second insulator includes a first opening and a second opening reaching the first insulator and the transistor, respectively,
wherein the first opening is filled with a fourth insulator, wherein the second opening is filled with a conductor,
wherein the first insulator, the third insulator, the fourth insulator, and the conductor each have a lower hydrogen-transmitting property than the second insulator, and
wherein the first opening surrounds the transistor.
6. The semiconductor according to claim 5 ,
wherein the conductor comprises a first region and a second region, and
wherein the first region has a lower hydrogen-transmitting property than the second region.
7. The semiconductor device according to claim 6 , wherein the first region is interposed between the second region and each of the second insulator and the third insulator.
8. The semiconductor device according to claim 6 , wherein the first region comprises a region that is in contact with the transistor.
9. The semiconductor device according to claim 6 , wherein the first region comprises a region that is in contact with side surfaces of the second opening.
10. The semiconductor device according to claim 6 , wherein the first region comprises a region where nitrogen concentration is higher than nitrogen concentration of the second region.
11. The semiconductor device according to claim 6 , wherein the first region comprises a hydrogen absorbing metal.
12. The semiconductor device according to claim 5 , wherein a channel formation region of the transistor comprises an oxide semiconductor.
13. A module comprising:
the semiconductor device according to claim 5 ; and
a printed wiring board.
14. An electronic device comprising:
the semiconductor device according to claim 5 or the module according to claim 13 ; and
at least one of a speaker, an operation key, and a battery.
15. A semiconductor device comprising:
a first transistor;
a first insulator over the first transistor;
a second insulator over the first insulator;
a second transistor over the second insulator;
a third insulator over the second transistor; and
a fourth insulator over the third insulator,
wherein the third insulator comprises an opening reaching the second insulator, wherein the opening is filled with a fifth insulator,
wherein the second insulator, the fourth insulator, and the fifth insulator each have a lower hydrogen-transmitting property than the third insulator, and
wherein the opening surrounds the second transistor.
16. The semiconductor device according to claim 15 , wherein a channel formation region of the second transistor comprises an oxide semiconductor.
17. A module comprising:
the semiconductor device according to claim 15 ; and
a printed wiring board.
18. An electronic device comprising:
the semiconductor device according to claim 15 or the module according to claim 17 ; and
at least one of a speaker, an operation key, and a battery.