Magnetoresistive device and method of manufacturing same
A magnetoresistive-based device and method of manufacturing a magnetoresistive-based device using a plurality of masks. The magnetoresistive-based device includes magnetic material layers formed between a first electrically conductive layer and a second electrically conductive layer, the magnetic materials layers including a tunnel barrier layer formed between a first magnetic materials layer and a second magnetic materials layer. In one embodiment, the method may include removing the first electrically conductive layer and the first magnetic materials layer unprotected by a first mask, to form a first electrode and a first magnetic materials, respectively, and removing the tunnel barrier layer and the second magnetic materials layer unprotected by a second mask to form a tunnel barrier and second magnetic materials, and the second electrically conductive layer unprotected by the second mask to form, and a second electrode.
1. A method of manufacturing a magnetoresistive device from: (i) a first layer of ferromagnetic material disposed over a first electrically conductive material which is disposed over a substrate, (ii) a first tunnel barrier layer disposed over the first layer of ferromagnetic material, (iii) a second layer of ferromagnetic material disposed over the first tunnel barrier layer, (iv) a second tunnel barrier layer disposed over the second layer of ferromagnetic material, (v) a first layer of non-magnetic material disposed over the second tunnel barrier layer and (vi) a first layer of electrically conductive material disposed over the first layer of non-magnetic material, method comprising:
forming a first mask over a selected portion of the first layer of electrically conductive material;
after forming the first mask, etching (a) through the first layer of electrically conductive material to form a top electrically conductive electrode, (b) through the first layer of non-magnetic material to provide sidewalls thereof, (c) through the second tunnel barrier layer to form a second tunnel barrier and provide sidewalls thereof and (d) the second layer of ferromagnetic material to provide sidewalls thereof;
forming a second mask over (a) the top electrically conductive electrode and (b) the sidewalls of (i) the second tunnel barrier, (ii) the first layer of non-magnetic material and (iii) the second layer of ferromagnetic material; and
after forming the second mask, etching (a) through the first tunnel barrier layer to form a first tunnel barrier and provide sidewalls thereof and (b) the first layer of ferromagnetic material to provide sidewalls thereof; and
providing an insulating material on the sidewalls of (i) the first tunnel barrier and (ii) the first layer of ferromagnetic material.
2. The method of claim 1 wherein forming the first mask includes:
depositing a first mask layer, and
patterning the first mask layer, using a patterned photo resist disposed thereon, to form the first mask.
3. The method of claim 2 wherein forming the second mask includes forming the second mask using a self-aligning process.
4. The method of claim 1 wherein forming the second mask includes:
depositing a mask layer, and
patterning the mask layer, using a patterned photo resist disposed thereon, to form the second mask.
5. The method of claim 1 wherein a third layer of ferromagnetic material is disposed between the first layer of non-magnetic material and the first layer of electrically conductive material and the method of
etching (a) through the first layer of electrically conductive material, (b) through the first layer of non-magnetic material, (c) through the second tunnel barrier layer and (d) the second layer of ferromagnetic material further includes etching the third layer of ferromagnetic material to provide sidewalls thereof, and
forming a second mask over (a) the top electrically conductive electrode and (b) the sidewalls of (i) the second tunnel barrier, (ii) the first layer of non-magnetic material and (iii) the second layer of ferromagnetic material further includes forming the second mask over the sidewalls of the third layer of ferromagnetic material.
6. The method of claim 5 wherein forming the second mask includes forming the second mask using a self-aligning process.
7. The method of claim 1 wherein after forming the first mask and etching (a) through the first layer of electrically conductive material, (b) through the first layer of non-magnetic material, (c) through the second tunnel barrier layer, and (d) the second layer of ferromagnetic material, and before forming a second mask, the method further includes:
providing an insulating material on the sidewalls of: (i) the second tunnel barrier (ii) the first layer of non-magnetic material and (iii) the second layer of ferromagnetic material.
8. The method of claim 7 wherein forming the second mask includes forming the second mask using a self-aligning process.
9. A method of manufacturing a magnetoresistive device from: (i) a first layer of ferromagnetic material disposed over a first electrically conductive material, which is disposed over a substrate, (iii) a first tunnel barrier layer disposed over the first layer of ferromagnetic material, (iv) a second layer of ferromagnetic material disposed over the first tunnel barrier layer, (v) a second tunnel barrier layer disposed over the second layer of ferromagnetic material, (iv) a first layer of non-magnetic material disposed over the second tunnel barrier layer and (vii) a first layer of electrically conductive material disposed over the first layer of non-magnetic material, method comprising:
forming a first mask over a selected portion of the first layer of electrically conductive material;
after forming the first mask, etching (a) through the first layer of electrically conductive material to form a top electrically conductive electrode, (b) through the first layer of non-magnetic material to provide sidewalls thereof, (c) through the second tunnel barrier layer to form a second tunnel barrier and provide sidewalls thereof, and (d) through the second layer of ferromagnetic material to provide sidewalls thereof;
forming a second mask over (a) the top electrically conductive electrode and (b) the sidewalls of (i) the second tunnel barrier, (ii) the second layer of ferromagnetic material and (iii) the first layer of non-magnetic material; and
after forming the second mask, etching (a) through the first tunnel barrier layer to form a first tunnel barrier and provide sidewalls thereof and (b) the first layer of ferromagnetic material to provide sidewalls thereof.
10. The method of claim 9 wherein:
forming the first mask includes:
depositing a first mask layer, and
patterning the first mask layer, using a patterned photo resist disposed thereon, to form the first mask; and
forming the second mask includes forming the second mask using a self-aligning process.
11. The method of claim 9 wherein forming the second mask includes:
depositing a mask layer, and
patterning the mask layer, using a patterned photo resist disposed thereon, to form the second mask.
12. The method of claim 9 wherein after forming the second mask, etching the first layer of ferromagnetic material further includes etching through the first layer of ferromagnetic material.
13. The method of claim 9 wherein forming the second mask includes forming the second mask using a self-aligning process.
14. The method of claim 9 wherein after forming the first mask and etching (a) through the first layer of electrically conductive material, (b) through the first layer of non-magnetic material, (c) through the second tunnel barrier layer, and (d) the second layer of ferromagnetic material, and before forming a second mask, the method further includes:
providing an insulating layer on the sidewalls of: (i) the second tunnel barrier, (ii) the first layer of non-magnetic material and (iii) the second layer of ferromagnetic material.
15. The method of claim 9 wherein a third layer of ferromagnetic material is disposed between the first layer of non-magnetic material and the first layer of electrically conductive material and the method of
etching (a) through the first layer of electrically conductive material, (b) through the first layer of non-magnetic material, (c) through the second tunnel barrier layer and (d) the second layer of ferromagnetic material further includes etching the third layer of ferromagnetic material to provide sidewalls thereof, and
forming a second mask over (a) the top electrically conductive electrode and (b) the sidewalls of (i) the second tunnel barrier, (ii) first layer of non-magnetic material and (iii) the second layer of ferromagnetic material further includes forming the second mask over the sidewalls of the third layer of ferromagnetic material.
16. The method of claim 15 wherein forming the second mask includes forming the second mask using a self-aligning process.
17. The method of claim 15 wherein:
forming the first mask includes:
depositing a first mask layer, and
patterning the first mask layer, using a patterned photo resist disposed thereon, to form the first mask; and
forming the second mask includes forming the second mask using a self-aligning process.
18. The method of claim 9 wherein the first layer of non-magnetic material includes ruthenium.
19. The method of claim 1 wherein the first layer of non-magnetic material includes ruthenium.