IP Library Granted Patent US 9,731,971
Granted Patent B2
US 9,731,971 · App. 14/844,399 · Granted Aug 15, 2017

Methods for the production of aligned carbon nanotubes and nanostructured material containing the same

Inventors: Christopher H. Cooper (Sante Fe, NM); Hai-Feng Zhang (Winchester, MA); Richard Czerw (Clemmons, NC)
Assignee: Multipure International
C01B31/024B01J37/0215B01J37/0217B01J37/0238B82Y30/00B82Y40/00C01B31/0233C23C16/26C23C16/50B01J23/745C01B2202/08C01B2202/34C01P2004/13D01F9/133
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Quick Facts
Patent No.
US 9,731,971
App. No.
14/844,399
Granted
Aug 15, 2017
Kind
B2
Abstract

Disclosed herein is a scaled method for producing substantially aligned carbon nanotubes by depositing onto a continuously moving substrate, (1) a catalyst to initiate and maintain the growth of carbon nanotubes, and (2) a carbon-bearing precursor. Products made from the disclosed method, such as monolayers of substantially aligned carbon nanotubes, and methods of using them are also disclosed.

Claims (19)

1. A method for producing substantially aligned carbon nanotubes, said method comprising:

depositing onto a continuously moving substrate, (1) a catalyst to initiate and maintain the growth of carbon nanotubes, and (2) a carbon-bearing precursor, growing nanotubes inside of a chemical vapor deposition (CVD) reactor at conditions that promote the growth of substantially aligned carbon nanotubes on the catalyst support material; and

heating said moving substrate prior to depositing said catalyst thereon, said heating for removing contaminants therefrom,

wherein the carbon-bearing precursor is preheated by a delivery manifold prior to being introduced into the CVD reactor.

2. A method for producing substantially aligned carbon nanotubes, said method comprising:

depositing onto a continuously moving substrate, (1) a catalyst to initiate and maintain the growth of carbon nanotubes, and (2) a carbon-bearing precursor, growing nanotubes inside of a chemical vapor deposition (CVD) reactor at conditions that promote the growth of substantially aligned carbon nanotubes on the catalyst support material; and

heating said moving substrate prior to depositing said catalyst thereon, said heating for removing contaminants therefrom,

wherein said conditions that promote the growth of substantially aligned carbon nanotubes include the deposition of carbon bearing precursor at a flow rate per unit substrate surface ranging from 10 ml/(cm 2 min) to 400 ml/(cm 2 min).

3. A method for producing substantially aligned carbon nanotubes, said method comprising:

depositing onto a continuously moving substrate, (1) a catalyst to initiate and maintain the growth of carbon nanotubes, and (2) a carbon-bearing precursor, growing nanotubes inside of a chemical vapor deposition (CVD) reactor at conditions that promote the growth of substantially aligned carbon nanotubes on the catalyst support material; and

heating said moving substrate prior to depositing said catalyst thereon, said heating for removing contaminants therefrom,

wherein said catalyst comprises a particle having diameter ranging from 0.7 nm and 50nm.

4. A method for producing substantially aligned carbon nanotubes, said method comprising:

depositing onto a continuously moving substrate, (1) a catalyst to initiate and maintain the growth of carbon nanotubes, and (2) a carbon-bearing precursor, growing nanotubes inside of a chemical vapor deposition (CVD) reactor at conditions that promote the growth of substantially aligned carbon nanotubes on the catalyst support material; and

heating said moving substrate prior to depositing said catalyst thereon, said heating for removing contaminants therefrom,

wherein said continuously moving substrate is moving at a speed sufficient to produce said carbon nanotubes to a length ranging from 100 um to 20 cm.

5. A method for producing substantially aligned carbon nanotubes, said method comprising:

depositing onto a semi-continuous or continuously moving substrate: (1) a catalyst to initiate and maintain the growth of carbon nanotubes, said catalyst comprising iron, cobalt, nickel, platinum, lead, palladium, copper, gold, or any combination or alloy thereof; and (2) a carbon-bearing precursor at a flow rate per unit substrate surface ranging from 10 ml/(cm 2 min) to 400 ml/(cm 2 min), growing nanotubes inside of a chemical vapor deposition (CVD) reactor at a temperature ranging from 600 to 1,100 degrees Celsius, wherein said substrate comprises a flexible or rigid tape, wire, ribbon, cylindrical, or ring substrate of platinum, palladium, iridium, iron, cobalt, nickel, chromium, carbon, silicon, aluminum, magnesium carbon, combinations, alloys or oxides thereof; and

heating said moving substrate prior to depositing said catalyst thereon, said heating for removing contaminants therefrom.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 23, 2016
From: SELDON TECHNOLOGIES, INC.
To: MULTIPURE INTERNATIONAL
Reel/Frame 037801/0715 →
Continuity (4)
Continuation 14209358 · Mar 13, 2014
Continuation 12026868 · Feb 6, 2008
Provisional Application 60899868 · Feb 7, 2007
Related Publication 20150376011A1 · Dec 31, 2015