Bipolar transistor device with an emitter having two types of emitter regions

1. A bipolar semiconductor device, comprising:

a semiconductor body having a first surface;

a base region of a first doping type and a first emitter region in the semiconductor body, and

a field-stop region of the first doping type between the base region and the first emitter region,

wherein:

the first emitter region adjoins the first surface and comprises a plurality of first type emitter regions of a second doping type complementary to the first doping type, a plurality of second type emitter regions of the second doping type, a plurality of third type emitter regions of the first doping type, and a recombination region comprising recombination centers,

the first type emitter regions and the second type emitter regions extend from the first surface into the semiconductor body,

the first type emitter regions have a higher doping concentration and extend deeper into the semiconductor body from the first surface than the second type emitter regions,

the third type emitter regions adjoin the first type emitter regions and the second type emitter regions, and

the recombination region is located at least in the first type emitter regions and the third type emitter regions; and

a doping concentration of the field-stop region is higher than the doping concentration of the base region.

2. The bipolar semiconductor device of claim 1 , wherein a ratio between a minimum doping concentration of the field-stop region and a maximum doping concentration of the base region is between 2 and 4.

3. A method, comprising:

in a first implantation process, implanting dopant atoms of one conductivity type into first surface sections of a first surface of a semiconductor body, and covering second surface sections of the first surface during the implanting;

in a first activation process, activating at least a part of the dopant atoms implanted in the first implantation process to form first doped regions below the first surface sections;

in a second implantation process, implanting dopant atoms of the one conductivity type into the first surface sections and the second surface sections; and

in a second activation process, activating only a part of the dopant atoms implanted in the second implantation process to form second doped regions and recombination regions such that the recombination regions are more spaced apart from the second surface regions than the second doped regions,

wherein activating at least a part of the dopant atoms implanted in the first implantation process comprises a laser anneal process.

4. The method of claim 3 , wherein a duration of the laser anneal process is between 100 and 1000 nanoseconds.

5. A method, comprising:

in a first implantation process, implanting dopant atoms of one conductivity type into first surface sections of a first surface of a semiconductor body, and covering second surface sections of the first surface during the implanting;

in a first activation process, activating at least a part of the dopant atoms implanted in the first implantation process to form first doped regions below the first surface sections;

in a second implantation process, implanting dopant atoms of the one conductivity type into the first surface sections and the second surface sections; and

in a second activation process, activating only a part of the dopant atoms implanted in the second implantation process to form second doped regions and recombination regions such that the recombination regions are more spaced apart from the second surface regions than the second doped regions,

wherein activating only a part of the dopant atoms implanted in the second implantation process comprises an annealing process at temperatures of between 350 and 450° C.

6. A method, comprising:

in a first implantation process, implanting dopant atoms of one conductivity type into first surface sections of a first surface of a semiconductor body, and covering second surface sections of the first surface during the implanting;

in a first activation process, activating at least a part of the dopant atoms implanted in the first implantation process to form first doped regions below the first surface sections;

in a second implantation process, implanting dopant atoms of the one conductivity type into the first surface sections and the second surface sections; and

in a second activation process, activating only a part of the dopant atoms implanted in the second implantation process to form second doped regions and recombination regions such that the recombination regions are more spaced apart from the second surface regions than the second doped regions,

wherein the dopant atoms in at least one of the first implantation process and the second implantation process are selected from the group consisting of:

boron atoms;

aluminum atoms;

indium atoms; and

gallium atoms.

7. A method, comprising:

in a first implantation process, implanting dopant atoms of one conductivity type into first surface sections of a first surface of a semiconductor body, and covering second surface sections of the first surface during the implanting;

in a first activation process, activating at least a part of the dopant atoms implanted in the first implantation process to form first doped regions below the first surface sections;

in a second implantation process, implanting dopant atoms of the one conductivity type into the first surface sections and the second surface sections; and

in a second activation process, activating only a part of the dopant atoms implanted in the second implantation process to form second doped regions and recombination regions such that the recombination regions are more spaced apart from the second surface regions than the second doped regions,

wherein the first surface sections are elliptic surface sections.