IP Library Granted Patent US 9,761,340
Granted Patent B2
US 9,761,340 · App. 15/275,430 · Granted Sep 12, 2017

Method of preparing strain released strip-bent x-ray crystal analyzers

Inventor: Qing Qian (Freehold, NJ)
G21K1/00G01N23/2076H01L31/085H01L31/1804
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Quick Facts
Patent No.
US 9,761,340
App. No.
15/275,430
Granted
Sep 12, 2017
Kind
B2
Abstract

A method of preparing two dimension bent X-ray crystal analyzers in strips feature is provided. A crystal wafer in strips is bonded to a curved substrate which offers the desired focus length. A crystal wafer in strips is pressed against the surface of the substrate forming curved shape by anodic bonding or glue bonding. The bonding is permanently formed between crystal wafer and its substrate surface, which makes crystal wafer has same curvature as previously prepared substrate.

Claims (9)

1. A Method of making x-ray crystal analyzer in two dimension bending with strip crystal feature by bonding crystal wafer in strips with curved substrate.

2. The method of claim 1 , wherein the bonding method is anodic boing, it comprising: pressing the top crystal wafer strips and substrate together, heating all set to high temperature, applying high voltage on wafer and its substrate, forming chemical atomic bond between the crystal wafer and its glass substrate.

3. The method of claim 2 , wherein the crystal wafer strips can be bonded one by one, or bonded all in same time.

4. The method of clam 1 , wherein the bonding method can be glue method or others, in which, it can bond crystal wafer and substrate together.

5. The method of claim 4 , wherein there can be a interlayer between wafer strips and substrate.

6. The method of claim 1 , wherein the crystals can be silicon, germanium, sapphire, quartz, lithium fluoride, diamond, Lithium Niobium oxide and all crystals which can be sliced and bent.

7. The method of claim 1 , wherein the substrate can be metal and glass.

8. The method of claim 1 , wherein the crystal wafer can be cut in any shape and any pieces, but are aligner in their original position in the wafer.

9. The method of claim 1 , wherein the bending radius can be any length between 10 mm to 3000 mm.

Continuity (2)
Provisional Application 62243117 · Oct 18, 2015
Related Publication 20170110621A1 · Apr 20, 2017