Interposer-less stack die interconnect
Techniques for providing a semiconductor assembly having an interconnect die for die-to-die interconnection, an IC package, a method for manufacturing, and a method for routing signals in an IC package are described. In one implementation, a semiconductor assembly is provided that includes a first interconnect die coupled to a first integrated circuit (IC) die and a second IC die by inter-die connections. The first interconnect die includes solid state circuitry that provides a signal transmission path between the IC dice.
1. A semiconductor assembly, comprising:
a first integrated circuit (IC) die;
a second IC die; and
a first interconnect die coupled to the IC dice by inter-die connections, the first interconnect die having solid state circuitry providing a programmable bi-directional signal transmission path between the IC dice through the first interconnect die, wherein the solid state circuitry is operable to select a routing of the bi-directional signal transmission path between any one of a first plurality of conductive pads formed on the first interconnect die for connection with any one of a second plurality of conductive pads formed on the first interconnect die.
2. The semiconductor assembly of claim 1 further comprising:
a plurality of conductive pillars extending from the first IC die; and
a surface substantially coplanar with distal ends of the conductive pillars.
3. The semiconductor assembly of claim 1 , wherein the conductive pillars extend about 60 to 80 μm from the first IC die.
4. The semiconductor assembly of claim 1 further comprising:
a second interconnect die coupled to at least one of the IC dice by inter-die connections.
5. The semiconductor assembly of claim 1 , wherein the first interconnect die further comprises:
memory coupled to the solid state circuitry.
6. The semiconductor assembly of claim 1 further comprising:
a package substrate coupled to the IC dice by a plurality of electrical interconnects, wherein the package substrate is coupled to the first interconnect die by a plurality of electrical interconnects.
7. The semiconductor assembly of claim 1 , wherein the first interconnect die comprises a thickness of less than 250 microns.
8. The semiconductor assembly of claim 1 , wherein the first interconnect die has a plan area less than that of at least one of the IC dices.
9. The semiconductor assembly of claim 1 further comprising:
at least a third IC die coupled to the first interconnect die by inter-die connections, the solid state circuitry configured to provide a programmable point to point signal transmission path between the first, second and at least third IC dice through the first interconnect die.
10. The semiconductor assembly of claim 1 , wherein first interconnect die further comprises:
a thickness of less than 80 microns.
11. A semiconductor assembly, comprising:
a first integrated circuit (IC) die;
a second IC die; and
a first interconnect die coupled to the IC dice by inter-die connections, the first interconnect die having solid state circuitry providing a programmable bi-directional signal transmission path between the IC dice through the first interconnect die, wherein the bi-directional signal transmission path of solid state circuitry includes a plurality of programmable elements serially coupled between a first inter-die connection of the inter-die connections coupling the solid state circuitry to the first die and a second inter-die connection of the inter-die connections coupling the solid state circuitry to the second die, the plurality of programmable elements operable to pipeline data through the first interconnect die between the first and second inter-die connections.
12. The semiconductor assembly of claim 11 further comprising:
a plurality of conductive pillars extending from the first IC die; and
a surface substantially coplanar with distal ends of the conductive pillars.
13. The semiconductor assembly of claim 11 , wherein the conductive pillars extend about 60 to 80 μm from the first IC die.
14. The semiconductor assembly of claim 11 further comprising:
a second interconnect die coupled to at least one of the IC dice by inter-die connections.
15. The semiconductor assembly of claim 11 , wherein the first interconnect die further comprises:
memory coupled to the solid state circuitry.
16. The semiconductor assembly of claim 11 further comprising:
a package substrate coupled to the IC dice by a plurality of electrical interconnects, wherein the package substrate is coupled to the first interconnect die by a plurality of electrical interconnects.
17. The semiconductor assembly of claim 11 , wherein the first interconnect die comprises a thickness of less than 250 microns.
18. The semiconductor assembly of claim 11 , wherein the first interconnect die has a plan area less than that of at least one of the IC dices.
19. The semiconductor assembly of claim 11 further comprising:
at least a third IC die coupled to the first interconnect die by inter-die connections, the solid state circuitry configured to provide a programmable point to point signal transmission path between the first, second and at least third IC dice through the first interconnect die.
20. The semiconductor assembly of claim 11 , wherein first interconnect die further comprises:
a thickness of less than 80 microns.