High speed photosensitive devices and associated methods
High speed optoelectronic devices and associated methods are provided. In one aspect, for example, a high speed optoelectronic device can include a silicon material having an incident light surface, a first doped region and a second doped region forming a semiconductive junction in the silicon material, and a textured region coupled to the silicon material and positioned to interact with electromagnetic radiation. The optoelectronic device has a response time of from about 1 picosecond to about 5 nanoseconds and a responsivity of greater than or equal to about 0.4 A/W for electromagnetic radiation having at least one wavelength from about 800 nm to about 1200 nm.
1. A high speed optoelectronic device for detecting infrared radiation, comprising:
a silicon material having a thickness in a range of about 1 micron to about 100 microns and having a surface for receiving incident radiation;
a first doped region and a second doped region forming a semiconductive junction in the silicon material; and
a textured region having nanosized features and coupled to the silicon material and positioned to interact with electromagnetic radiation;
wherein the optoelectronic device has a response time of from about 1 picosecond to about 5 nanoseconds and a responsivity of greater than or equal to about 0.4 A/W for electromagnetic radiation having at least one wavelength from about 800 nm to about 1200 nm.
2. The device of claim 1 , wherein the optoelectronic device has a responsivity of greater than or equal to about 0.5 A/W for electromagnetic radiation having at least one wavelength from about 800 nm to about 1200 nm.
3. The device of claim 1 , wherein the optoelectronic device has a response time of from 1 picosecond to about 1 nanosecond.
4. The device of claim 1 , wherein the optoelectronic device has a data rate greater than or equal to about 1 Gbs.
5. The device of claim 1 , further comprising a first contact and a second contact wherein the first contact is opposite in voltage polarity from the second contact.
6. The device of claim 5 , wherein a reverse bias is applied across the first and second contacts.
7. The device of claim 6 , wherein a bias is not applied across the first and second contacts during use.
8. The device of claim 1 , wherein dark current of the device during operation is from about 100 pA/cm 2 to about 10 nA/cm 2 .
9. The device of claim 1 , wherein the textured region is positioned on an opposite side of the silicon material from the surface for receiving incident light.
10. The high speed optoelectronic device of claim 1 , wherein said textured region is laser generated.
11. A high speed optoelectronic device for detecting infrared radiation, comprising:
a silicon material having a thickness in a range of about 1 micron to about 10 microns and having a surface for receiving incident radiation;
a first doped region and a second doped region forming a semiconductive junction in the silicon material; and
a textured region having nanosized features and coupled to the silicon material and positioned to interact with electromagnetic radiation;
wherein the optoelectronic device has a response time of from about 1 picosecond to about 5 nanoseconds and a responsivity of greater than or equal to about 0.05 A/W for electromagnetic radiation having a wavelength of about 1060 nm.
12. A photodiode array for detecting infrared radiation, comprising
a silicon material having a thickness in a range of about 1 micron to about 100 microns and having a surface for receiving incident radiation;
at least two photodiodes in the silicon material, each photodiode including a first doped region and a second doped region forming a junction; and
a textured region having nanosized features and coupled to the silicon material and positioned to interact with electromagnetic radiation;
wherein the photodiode array has a response time of from about 1 picosecond to about 5 nanoseconds and a responsivity of greater than or equal to about 0.4 A/W for electromagnetic radiation having at least one wavelength from about 800 nm to about 1200 nm.
13. The array of claim 12 , wherein the at least two photodiodes are four photodiodes forming a quad array.
14. The array of claim 13 , wherein the four photodiodes of the quad array are selective to a single wavelength range.
15. The array of claim 12 , wherein the array is an image sensor.
16. The array of claim 12 , wherein the array is operable to detect a phase delay between a reflected and an emitted optical signal.
17. The array of claim 12 , wherein the array is operable to detect pulsed optical signals.
18. The array of claim 12 , wherein the at least two photodiodes are operable to transmit data at a rate of at least 1 Gbps.
19. The photodiode array of claim 12 , wherein said textured region is laser generated.