Storage device
A storage device of an embodiment includes a first conductive layer containing a first element selected from the group consisting of Si, Ge, and a metal element, a second conductive layer including a first region containing a first metal element and carbon or nitrogen, a second region containing a second metal element and carbon or nitrogen, and a third region provided between the first region and the second region, the third region containing a third metal element, the standard free energy of formation of an oxide of the third metal element being smaller than the standard free energy of formation of an oxide of the first element, a ferroelectric layer provided between the first conductive layer and the second conductive layer, and a paraelectric layer provided between the first conductive layer and the ferroelectric layer.
1. A storage device comprising:
a first conductive layer containing a first element selected from the group consisting of Si, Ge, and a metal element;
a second conductive layer including a first region containing a first metal element and at least one of carbon and nitrogen, a second region containing a second metal element and at least one of carbon and nitrogen, and a third region provided between the first region and the second region, the third region containing a third metal element, a standard free energy of formation of an oxide of the third metal element being smaller than a standard free energy of formation of an oxide of the first element;
a ferroelectric layer provided between the first conductive layer and the second conductive layer; and
a paraelectric layer provided between the first conductive layer and the ferroelectric layer.
2. The device according to claim 1 , wherein an oxygen concentration of the third region is higher than an oxygen concentration of the first region and an oxygen concentration of the second region.
3. The device according to claim 1 , wherein the first region includes one of a metal nitride and a metal carbide, and the second region includes one of a metal nitride and a metal carbide.
4. The device according to claim 1 , wherein the third metal element is an element selected from the group consisting of Ti, Ce, Eu, Zr, Ba, Al, Hf, Sr, La, Mg, Nd, Yb, Sm, Dy, Lu, Ho, Tm, Er, Ca, and Y.
5. The device according to claim 1 , wherein the first element is an element selected from the group consisting of Ta, Nb, V, W, Fe, Mo, Co, Ni, Ru, Ir, Cu, Pd, Ag, and Pt.
6. The device according to claim 1 , wherein a work function of the first conductive layer is equal to or greater than 4.5 eV.
7. The device according to claim 1 , wherein the first conductive layer includes a metal compound selected from the group consisting of tantalum carbide, tantalum nitride, niobium carbide, niobium nitride, vanadium carbide, and vanadium nitride.
8. The device according to claim 7 , wherein an oxygen concentration of the first conductive layer is not lower than 1 atomic percent and not higher than 10 atomic percent.
9. The device according to claim 1 , wherein the ferroelectric layer includes one of hafnium oxide and zirconium oxide.
10. The device according to claim 9 , wherein the hafnium oxide contains an element selected from the group consisting of Si, Zr, Al, Y, Sr, La, Ce, Gd, and Ba.
11. The device according to claim 1 , wherein the paraelectric layer contains silicon oxide.
12. A storage device comprising:
a plurality of first wirings;
a plurality of second wirings intersecting with the first wirings; and
a plurality of memory cells provided in regions of intersection between the first wirings and the second wirings,
wherein at least one of the memory cells includes:
a first conductive layer containing a first element selected from the group consisting of Si, Ge, and a metal element;
a second conductive layer including a first region containing a first metal element and at least one of carbon and nitrogen, a second region containing a second metal element and at least one of carbon and nitrogen, and a third region provided between the first region and the second region, the third region containing a third metal element, a standard free energy of formation of an oxide of the third metal element being smaller than a standard free energy of formation of an oxide of the first element;
a ferroelectric layer provided between the first conductive layer and the second conductive layer; and
a paraelectric layer provided between the first conductive layer and the ferroelectric layer.
13. The device according to claim 12 , wherein an oxygen concentration of the third region is higher than an oxygen concentration of the first region and an oxygen concentration of the second region.
14. The device according to claim 12 , wherein the first region includes one of a metal nitride and a metal carbide, and the second region includes one of a metal nitride and a metal carbide.
15. The device according to claim 12 , wherein the third metal element is an element selected from the group consisting of Ti, Ce, Eu, Zr, Ba, Al, Hf, Sr, La, Mg, Nd, Yb, Sm, Dy, Lu, Ho, Tm, Er, Ca, and Y.
16. The device according to claim 12 , wherein the first element is an element selected from the group consisting of Ta, Nb, V, W, Fe, Mo, Co, Ni, Ru, Ir, Cu, Pd, Ag, and Pt.
17. The device according to claim 12 , wherein a work function of the first conductive layer is equal to or greater than 4.5 eV.
18. The device according to claim 12 , wherein the first conductive layer contains a metal compound selected from the group consisting of tantalum carbide, tantalum nitride, niobium carbide, niobium nitride, vanadium carbide, and vanadium nitride.
19. The device according to claim 18 , wherein an oxygen concentration of the first conductive layer is not lower than 1 atomic percent and not higher than 10 atomic percent.
20. The device according to claim 12 , wherein the ferroelectric layer contains one of hafnium oxide and zirconium oxide.